Structural and electronic effects of adatoms on metallic atomic chains in Si(111)5 × 2-Au.

We investigate the effects of native Si adatoms on structural and electronic properties of the Si(111)5 × 2-Au surface, a representative one-dimensional metal-chain system, by means of scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. High-resolution STM images of relatively long adatom-free chain segments evidence directly the inherent ×2 reconstruction, which is the essential part of a recently proposed structural model based on a renewed Au coverage of 0.7 monolayer. On the other hand, STM images for chain segments of different lengths reveal that the structural distortion induced by Si adatoms is confined in neighboring unit cells, in good agreement with DFT calculations based on that model. Si adatoms greatly affect the metallic bands of Au chains, one of which becomes fully occupied and represents a tightly confined electronic state to the distortion around Si adatoms, potentially forming short insulating segments within metallic chains. This finding provides an atomic-scale understanding of the observed gradual metal-insulator transition and atomic-scale phase separation induced by Si adatoms.

Single-Layer Limit of Metallic Indium Overlayers on Si(111).

Density-functional calculations are used to identify one-atom-thick metallic In phases grown on the Si(111) surface, which have long been sought in quest of the ultimate two-dimensional (2D) limit of metallic properties. We predict two metastable single-layer In phases, one sqrt[7]×sqrt[3] phase with a coverage of 1.4 monolayer (ML; here 1 ML refers to one In atom per top Si atom) and the other sqrt[7]×sqrt[7] phase with 1.43 ML, which indeed agree with experimental evidences. Both phases reveal quasi-1D arrangements of protruded In atoms, leading to 2D-metallic but anisotropic band structures and Fermi surfaces. This directional feature contrasts with the free-electron-like In-overlayer properties that are known to persist up to the double-layer thickness, implying that the ultimate 2D limit of In overlayers may have been achieved in previous studies of double-layer In phases.

Sonography of the first metatarsophalangeal joint and sonographically guided intraarticular injection of corticosteroid in acute gout attack.

OBJECTIVE: The aims of this study were to identify the characteristic ultrasound (US) findings of the first metatarsophalangeal joint (MTPJ1) in acute gout attack and to evaluate the efficacy and safety of US-guided intraarticular corticosteroid injection of the MTPJ1. METHODS: We enrolled 21 patients with acute gout attack involving the MTPJ1 unilaterally. US evaluation of each affected MTPJ1 was compared with radiographic features. US-guided intraarticular corticosteroid (0.5 ml [20 mg] of triamcinolone mixed with 0.5 ml of 2% lidocaine) was injected into the affected MTPJ1s. Pain, general disability, and walking disability were assessed at baseline, 24 hours, 48 hours, and 7 days after injection with visual analog scales. RESULTS: The characteristic US findings of MTPJ1 were erosion, joint effusion, synovial hypertrophy, tophus-like lesion, double contour, hyperechoic spots, and increased power Doppler signal in acute gout attack. US was more sensitive than conventional radiograph in detecting erosion and tophus-like lesion. The reductions of mean visual analog scale scores in pain, general disability, and walking disability were 48 mm (SD, 27), 35 mm (SD, 26) and 39 mm (SD, 26), respectively, 48 hours after US-guided intraarticular corticosteroid injection. There were no adverse events. CONCLUSIONS: US is a sensitive tool to evaluate joint abnormality of the MTPJ1 in acute gout attack and US-guided intraarticular corticosteroid injection to this joint is effective and safe.

Identification of the au coverage and structure of the Au/Si(111)-(5 × 2) surface.

We identify the atomic structure of the Au/Si(111)-(5 × 2) surface by using density functional theory calculations. With seven Au atoms per unit cell, our model forms a bona fide (5 × 2) atomic structure, which is energetically favored over the leading model of Erwin et al. [Phys. Rev. B 80, 155409 (2009)], and well reproduces the Y-shaped and V-shaped (5 × 2) STM images. This surface is metallic with a prominent half filled band of surface states, mostly localized around the Au-chain area. The correct identification of the atomic and band structure of the clean surface further clarifies the adsorption structure of Si adatoms and the physical origin of the intriguing metal-to-insulator transition driven by Si adatoms.

Double-layer in structural model for the In/Si(111)-√7×√3 surface.

We demonstrate by using density functional calculations that the In/Si(111)-√7×√3 surface consists of an In double layer, contrary to the prevailing idea that the In overlayer on this surface is just one atom thick and thus can be used to represent the ultimate 2D limit of metal overlayer properties. The double-layer In structure is sound energetically and microscopically and, above all, well reproduces the measured photoemission band structure that could not be fairly compared with any single-layer In model. The present double-layer model urges a reconsideration on the recent experimental claims that the In overlayer properties were pushed to a single-layer limit in this surface.

Nearly massless electrons in the silicon interface with a metal film.

We demonstrate the realization of nearly massless electrons in the most widely used device material, silicon, at the interface with a metal film. Using angle-resolved photoemission, we found that the surface band of a monolayer lead film drives a hole band of the Si inversion layer formed at the interface with the film to have a nearly linear dispersion with an effective mass about 20 times lighter than bulk Si and comparable to graphene. The reduction of mass can be accounted for by a repulsive interaction between neighboring bands of the metal film and Si substrate. Our result suggests a promising way to take advantage of massless carriers in silicon-based thin-film devices, which can also be applied to various other semiconductor devices.

Detection and restoration of defective lines in the SPOT 4 SWIR band.

This paper presents the categorization and restoration of defective lines developed in pushbroom images. About 100 of the 3000 SPOT 4 SWIR detectors malfunction, which degrades image quality. Conventional methods have difficulties in effectively detecting and restoring defective lines, because they ignore the heterogeneity of the ground surface and the presence of sporadically unstable detectors with gain and offset that vary during a scan. While all defective lines have previously been considered as a single type, here they are categorized into three types according to the variation pattern in the scanning direction: constant defective lines, irregular defective lines, and irrecoverable defective lines. The detection procedure utilizes summed data and standard deviation data that consist of abnormal peaks originating from defective lines and a slowly varying baseline reflecting the surface characteristics within the image. The defective lines are detected by finding abnormal peaks, and classified and restored by using either a moment-matching method or interpolation, depending upon their types. Three SPOT 4 images were used to test and evaluate the performance of the proposed method. From the test results, the constant defective line was the most common type, comprising about 60%, while the irregular defective lines caused serious image degradation because of the difficulty of detecting and classifying them. Commission and omission errors were less than 10% and detection accuracy was higher than 90%. The analysis of signal-to-noise ratio (SNR) showed that the low SNR created by the defective lines was effectively removed. Our method gave a significant improvement of the detection and restoration capability.

Three Reinfection Cases of the Pandemic Influenza (H1N1 2009) / 감염과화학요법

Infection with influenza virus results in acquisition of immunity, preventing reinfection with the homologous virus. Although reinfection following primary infection is rare, its incidence depends on immunity of human body, antigenic diversity of influenza virus, and the presence of outbreak in the community. During the pandemic influenza (H1N1 2009), a child and two women were reinfected by H1N1 influenza virus several weeks after the primary infection, and they were successfully treated again by oseltamivir. This case series will provide additional information on diagnosis, treatment, and prevention of the pandemic influenza (H1N1 2009).

Antiferromagnetic ground state of a C(60)-covered Si(001) surface.

Modeling magnetism: The antiferromagnetic ground state of the C(60)/Si(001)-c(4x4) surface is predicted by means of density functional theory calculations. Two adjacent dangling bonds (DBs) generated by the adsorption of C(60) are antiferromagnetically coupled with each other. This study demonstrates that magnetic Si surfaces can be prepared by engineering single Si DBs with unpaired electrons.

Nox 2 stimulates muscle differentiation via NF-kappaB/iNOS pathway.

The NF-kappaB/iNOS pathway stimulates muscle differentiation downstream of the PI 3-kinase/p38 MAPK pathway and diverse antioxidants block muscle differentiation. Therefore, we here investigated whether Nox 2 links those two myogenic pathways in H9c2 and C2C12 myoblasts. Compared with the proliferation stage, ROS generation was enhanced from the early stage of differentiation and gradually increased as differentiation progressed. Antioxidants suppressed the activated NF-kappaB/iNOS pathway during muscle differentiation. Nox 2 activity was also increased during muscle differentiation. Treatment with DPI and apocynin, two inhibitors of NADPH oxidase, and suppression of Nox 2 expression using siRNA, but not Nox 1, inhibited NADPH oxidase activity, muscle differentiation, and the NF-kappaB/iNOS pathway. Inhibition of PI 3-kinase and p38 MAPK suppressed the Nox 2/NF-kappaB/iNOS pathway. Nitric oxide restored muscle differentiation blocked by treatment with antioxidants or suppression of the Nox 2/NF-kappaB/iNOS pathway. In conclusion, Nox 2 stimulates muscle differentiation downstream of the PI 3-kinase/p38 MAPK pathway by activating the NF-kappaB/iNOS pathway via ROS generation.