RESUMO
Two new quaternary aluminum silicides, RE8Ru12Al49Si9(Al(x)Si12-x) (x approximately 4; RE = Pr, Sm), have been synthesized from Sm (or Sm2O3), Pr, Ru, and Si in molten aluminum between 800 and 1000 degrees C in sealed fused silica tubes. Both compounds form black shiny crystals that are stable in air and NaOH. The Nd analog is also stable. The compounds crystallize in a new structural type. The structure, determined by single-crystal X-ray diffraction, is cubic, space group Pm3m with Z = 1, and has lattice parameters of a = 11.510(1) A for Sm8Ru12Al49Si9(Al(x)Si12-x) and a = 11.553(2) A for Pr8Ru12Al49Si9(Al(x)Si12-x) (x approximately 4). The structure consists of octahedral units of AlSi6, at the cell center, Si2Ru4Al8 clusters, at each face center, SiAl8 cubes, at the middle of the cell edges, and unique (Al,Si)12 cuboctohedral clusters, at the cell corners. These different structural units are connected to each other either by shared atoms, Al-Al bonds, or Al-Ru bonds. The rare earth metal atoms fill the space between various structural units. The Al/Si distribution was verified by single-crystal neutron diffraction studies conducted on Pr8Ru12Al49Si9(Al(x)Si12-x). Sm8Ru12Al49Si9(Al(x)Si12-x) and Pr8Ru12Al49Si9(Al(x)Si12-x) show ferromagnetic ordering at Tc approximately 10 and approximately 20 K, respectively. A charge of 3+ can be assigned to the rare earth atoms while the Ru atoms are diamagnetic.
RESUMO
The ternary phase, Cu(x)UTe3 (x = 0.25 and 0.33), was synthesized from a 3/1/4 mixture of Cu/U/Te that was heated to 800 degrees C for 6 days and cooled at a rate of -4 degrees C x h(-1). It adopts the monoclinic space group P2(1)/m with a = 6.0838(12) A, b = 4.2140(8) A, c = 10.361(2) A, beta = 98.83(3) degrees, and V = 262.47(9) A3 (for x approximately 0.25). The structure is built from UTe3 layers of ZrSe3-type that are connected in the [001] direction by Cu atoms. The Cu atoms stabilize alpha-UTe3 by inserting between the layers. Cu(x)UTe3 can be prepared rationally via a soft chemistry route by reaction of Cu with alpha-UTe3. The structural analysis suggests the presence of straight chains of Te atoms ( approximately 3.0 A apart) along the a-axis but this is an artifact as shown by electron diffraction studies of Cu(x)UTe3 that indicate the existence of a supercell along the a-axis. Pair distribution function analysis (PDF) was used to show that the Te-Te chains contain Te-Te dimers at 2.74 A. Charge transport measurements suggest a narrow gap semiconductor but they also indicate anomalous behavior as a function of temperature with a n-type to p-type transition at approximately 40 K.
RESUMO
Materials with high electrical conductivity and optical transparency are needed for future flat panel display, solar energy, and other opto-electronic technologies. In(x)Cd(1-x)O films having a simple cubic microstructure have been grown on amorphous glass substrates by a straightforward chemical vapor deposition process. The x = 0.05 film conductivity of 17,000 S/cm, carrier mobility of 70 cm2/Vs, and visible region optical transparency window considerably exceed the corresponding parameters for commercial indium-tin oxide. Ab initio electronic structure calculations reveal small conduction electron effective masses, a dramatic shift of the CdO band gap with doping, and a conduction band hybridization gap caused by extensive Cd 5s + In 5s mixing.
RESUMO
Thermoelectric (Peltier) heat pumps are capable of refrigerating solid or fluid objects, and unlike conventional vapor compressor systems, they can be miniaturized without loss of efficiency. More efficient thermoelectric materials need to be identified, especially for low-temperature applications in electronics and devices. The material CsBi(4)Te(6) has been synthesized and its properties have been studied. When doped appropriately, it exhibits a high thermoelectric figure of merit below room temperature (ZT(max) approximately 0.8 at 225 kelvin). At cryogenic temperatures, the thermoelectric properties of CsBi(4)Te(6) appear to match or exceed those of Bi(2-x)Sb(x)Te(3-y)Se(y) alloys.
RESUMO
Six rare-earth arsenic tellurides have been synthesized by the reactions of the rare-earth elements (Ln) with As and Te at 1123 K. LaAsTe (a = 7.8354(11) A, b = 4.1721(6) A, c = 10.2985(14) A, T = 153 K), PrAsTe (a = 7.728(2) A, b = 4.1200(11) A, c = 10.137(3) A, T = 153 K), SmAsTe (a = 7.6180(16) A, b = 4.0821(9) A, c = 9.991(2) A, T = 153 K), GdAsTe (a = 7.5611(15) A, b = 4.0510(8) A, c = 9.920(2) A, T = 153 K), DyAsTe (a = 7.4951(13) A, b = 4.0246(7) A, c = 9.8288(17) A, T = 153 K), and ErAsTe (a = 7.4478(1) A, b = 4.0078(1) A, c = 9.7552(2) A, T = 153 K) crystallize with four formula units in the orthorhombic space group D2h16-Pnma. These compounds are isostructural and belong to the beta-ZrSb2 structure type. In each compound, the Ln atoms are coordinated by a tricapped trigonal prism of four As atoms and five Te atoms. The entire three-dimensional structure is built up by the motif of the LnAs4Te5 tricapped trigonal prisms. Infinite nonalternating zigzag As chains are found along the b axis, with As-As distances in these compounds ranging from 2.5915(5) to 2.6350(9) A. Conductivity measurements in the direction of these As chains indicate that PrAsTe is metallic whereas SmAsTe and DyAsTe are weakly metallic. Antiferromagnetic transitions occur in SmAsTe and DyAsTe at 3 and 9 K, respectively. DyAsTe above 9 K follows the Curie-Weiss law.
