RESUMO
A multi-coil superconducting magnet is the heart of any modern Magnetic Resonance Imaging (MRI) scanner. The superconducting magnet in MRI produces a highly homogeneous field (±5 ppm) and stable field (<0.1 ppm/h) in its imaging volume. The temporal field stability depends on the electrical resistance of the inter-coil joints and the electrical resistance of the joint between the coil and the superconducting switch. To establish the joint technology, a 4 K test rig is required for testing the sample joints. This paper briefly discusses the details of the versatile 4 K insert recently developed at IUAC for the characterization of the superconducting joints using the field-decay measurement technique. It can measure the joint resistance up to â¼10-15 Ω in a straight or spiral joint configuration with lengths up to 150 mm. The maximum current that can be induced on the test coil is more than 600 A for the field-decay measurement. The behavior of the joint resistance can also be studied in the presence of a 1.5 T background field. We have characterized many superconducting joints using this versatile 4 K insert. The joints between two different conductors can also be studied using this 4 K insert. The lowest joint resistance measured is 8 × 10-15 Ω at zero field. The joint resistance is also measured in the presence of the background field.
RESUMO
GaxZn1-xO thin films with varying Ga fraction within the solubility limit were irradiated with high-energy heavy ions to induce electronic excitations. The films show good transmittance in the visible region and a reduction of about 20% in transmittance was observed for irradiated films at higher ion fluences. The Urbach energy was estimated and showed an augmenting response upon increase in doping fraction and ion irradiation, this divulges an enhancement of localized states in the bandgap or disorder in the films. The evolution of such localized states plays a vital role in charge transport and thus the temperature dependent electrical conductivity of irradiated thin films was studied to elucidate the dominant conduction mechanisms. The detailed analysis unfolds that in the high-temperature regime (180 K
RESUMO
Herein, we present defect-induced photoluminescence behavior of Ga-doped ZnO (GZO) thin films with varying doping (Ga) concentrations and energetic ion irradiation. The Ga-doped ZnO thin films were prepared by a sol-gel spin-coating method. Micro-photoluminescence (µ-PL) was carried out to investigate the defect-related emission with the variation of doping concentration and ion irradiation. The PL spectra revealed that all films showed near-band-edge (NBE) emission along with a broad visible emission band, consisting of violet, blue, green, and yellow emission bands. The intensity of these emission bands was found to be strongly dependent on the Ga doping concentration and ion irradiation. Interestingly, a pronounced violet emission band around 2.99 eV (415 nm) was observed for the Ga-doped ZnO thin films with high Ga doping concentration, whereas an irradiated film with high ion fluence exhibited a strong green emission around 2.39 eV (519 nm); however, we concluded that the violet emission might have originated from zinc interstitial defects (Zni), and the concentration of Zni increased with the increasing doping concentration. The green emission is ascribed to the oxygen vacancies (VO), and the concentration of the VO defects increases with the increasing ion fluence. Thus, the µ-PL spectra of the irradiated films with emission dominating in the blue and green regions could be attributed to the formation of extended defects such as clusters and ionizing centers of Zni and VO. Herein, an in-depth understanding of the variation in defects related to the emission bands from these films is reported and correlated with the transport properties of these films for their possible optoelectronic applications.
