Ultrawide-bandwidth on-chip spectrometer design using band-pass filters.

Here, we present the design and simulation of an ultrawide-bandwidth on-chip spectrometer that can be used in various applications, e.g. spectral tissue sensing. It covers 1200 nm wavelength range (400 nm-1600 nm) with 2 nm spectral resolution. The overall design size is only 3 × 3 cm2. The ultra-wide spectral range is made possible by using novel on-chip band-pass filters for the coarse wavelength division. The fine resolution is provided by the arrayed waveguide gratings. The band-pass filter is formed by using bend waveguides and adiabatic full-couplers. The additional loss caused by the band-pass filter is relatively small. The proposed spectrometer covers entire 400 nm-1600 nm range continuously with low crosstalk values. We envision that this design can be used in several different applications including food safety, agriculture, industrial inspection, optical imaging, and biomedical research.

Compact ultrabroad-bandwidth cascaded arrayed waveguide gratings.

Here, we present a compact, high-resolution, and ultrabroad-bandwidth arrayed waveguide grating (AWG) realized in a silicon nitride (Si3N4) platform. The AWG has a cascaded configuration with a 1×3 flat-passband AWG as the primary filter and three 1×70 AWGs as secondary filters (i.e. 210 output channels in total). The primary AWG has 0.5-dB bandwidth of 45 nm over 190 nm spectral range. The ultrabroad-bandwidth is achieved by using an innovative design that is based on a multiple-input multi-mode interference (MMI) coupler placed at the entrance of the first free propagation region of the primary AWG. The optical bandwidth of the cascaded AWG is 190 nm, and the spectral resolution is 1 nm. The overall device size is only 1.1 × 1.0 cm2. Optical loss at the central channel is 4 dB, which is 3 dB less than a conventional design with the same bandwidth and resolution values but using a primary filter with Gaussian transfer function. To the best of our knowledge, this is the first demonstration of an ultrabroad-bandwidth cascaded AWG on a small footprint. We also propose a novel low-loss (∼ 0.8 dB) design using a small AWG instead of an MMI coupler in the primary filter part, which can be used in applications where the light intensity is very weak, such as Raman spectroscopy.

Sonochemical Synthesis of a Zinc Oxide Core-Shell Nanorod Radial p-n Homojunction Ultraviolet Photodetector.

We report for the first time on the growth of a homogeneous radial p-n junction in the ZnO core-shell configuration with a p-doped ZnO nanoshell structure grown around a high-quality unintentionally n-doped ZnO nanorod using sonochemistry. The simultaneous decomposition of phosphorous (P), zinc (Zn), and oxygen (O) from their respective precursors during sonication allows for the successful incorporation of P atoms into the ZnO lattice. The as-formed p-n junction shows a rectifying current-voltage characteristic that is consistent with a p-n junction with a threshold voltage of 1.3 V and an ideality factor of 33. The concentration of doping was estimated to be NA = 6.7 × 1017 cm-3 on the p side from the capacitance-voltage measurements. The fabricated radial p-n junction demonstrated a record optical responsivity of 9.64 A/W and a noise equivalent power of 0.573 pW/√Hz under ultraviolet illumination, which is the highest for ZnO p-n junction devices.

Optical Switching Using Transition from Dipolar to Charge Transfer Plasmon Modes in Ge2Sb2Te5 Bridged Metallodielectric Dimers.

Capacitive coupling and direct shuttling of charges in nanoscale plasmonic components across a dielectric spacer and through a conductive junction lead to excitation of significantly different dipolar and charge transfer plasmon (CTP) resonances, respectively. Here, we demonstrate the excitation of dipolar and CTP resonant modes in metallic nanodimers bridged by phase-change material (PCM) sections, material and electrical characteristics of which can be controlled by external stimuli. Ultrafast switching (in the range of a few nanoseconds) between amorphous and crystalline phases of the PCM section (here Ge2Sb2Te5 (GST)) allows for designing a tunable plasmonic switch for optical communication applications with significant modulation depth (up to 88%). Judiciously selecting the geometrical parameters and taking advantage of the electrical properties of the amorphous phase of the GST section we adjusted the extinction peak of the dipolar mode at the telecommunication band (λ~1.55 µm), which is considered as the OFF state. Changing the GST phase to crystalline via optical heating allows for direct transfer of charges through the junction between nanodisks and formation of a distinct CTP peak at longer wavelengths (λ~1.85 µm) far from the telecommunication wavelength, which constitutes the ON state.

Transition from capacitive coupling to direct charge transfer in asymmetric terahertz plasmonic assemblies.

We experimentally and numerically analyze the charge transfer THz plasmons using an asymmetric plasmonic assembly of metallic V-shaped blocks. The asymmetric design of the blocks allows for the excitation of classical dipolar and multipolar modes due to the capacitive coupling. Introducing a conductive microdisk between the blocks, we facilitated the excitation of the charge transfer plasmons and studied their characteristics along with the capacitive coupling by varying the size of the disk.

Hot electron generation by aluminum oligomers in plasmonic ultraviolet photodetectors.

We report on an integrated plasmonic ultraviolet (UV) photodetector composed of aluminum Fano-resonant heptamer nanoantennas deposited on a Gallium Nitride (GaN) active layer which is grown on a sapphire substrate to generate significant photocurrent via formation of hot electrons by nanoclusters upon the decay of nonequilibrium plasmons. Using the plasmon hybridization theory and finite-difference time-domain (FDTD) method, it is shown that the generation of hot carriers by metallic clusters illuminated by UV beam leads to a large photocurrent. The induced Fano resonance (FR) minimum across the UV spectrum allows for noticeable enhancement in the absorption of optical power yielding a plasmonic UV photodetector with a high responsivity. It is also shown that varying the thickness of the oxide layer (Al2O3) around the nanodisks (tox) in a heptamer assembly adjusted the generated photocurrent and responsivity. The proposed plasmonic structure opens new horizons for designing and fabricating efficient opto-electronics devices with high gain and responsivity.

Graphene FETs with Low-Resistance Hybrid Contacts for Improved High Frequency Performance.

This work proposes a novel geometry field effect transistor with graphene as a channel-graphene field-effect transistor (GFET), having a hybrid contact that consists of an ohmic source/drain and its extended part towards the gate, which is capacitively coupled to the channel. The ohmic contacts are used for direct current (DC) biasing, whereas their capacitive extension reduces access region length and provides the radio frequency (RF) signal a low impedance path. Minimization of the access region length, along with the paralleling of ohmic contact's resistance and resistive part of capacitively coupled contact's impedance, lower the overall source/drain resistance, which results in an increase in current gain cut-off frequency, fT. The DC and high-frequency characteristics of the two chosen conventional baseline GFETs, and their modified versions with proposed hybrid contacts, have been extensively studied, compared, and analyzed using numerical and analytical techniques.

Highly sensitive wide bandwidth photodetector based on internal photoemission in CVD grown p-type MoS2/graphene Schottky junction.

Two dimensional (2D) Molybdenum disulfide (MoS2) has evolved as a promising material for next generation optoelectronic devices owing to its unique electrical and optical properties, such as band gap modulation, high optical absorption, and increased luminescence quantum yield. The 2D MoS2 photodetectors reported in the literature have presented low responsivity compared to silicon based photodetectors. In this study, we assembled atomically thin p-type MoS2 with graphene to form a MoS2/graphene Schottky photodetector where photo generated holes travel from graphene to MoS2 over the Schottky barrier under illumination. We found that the p-type MoS2 forms a Schottky junction with graphene with a barrier height of 139 meV, which results in high photocurrent and wide spectral range of detection with wavelength selectivity. The fabricated photodetector showed excellent photosensitivity with a maximum photo responsivity of 1.26 AW(-1) and a noise equivalent power of 7.8 × 10(-12) W/√Hz at 1440 nm.

Fano-like resonances in split concentric nanoshell dimers in designing negative-index metamaterials for biological-chemical sensing and spectroscopic purposes.

In this study, we investigated numerically the plasmon response of a dimer configuration composed of a couple of split and concentric Au nanoshells in a complex orientation. We showed that an isolated composition of two concentric split nanoshells could be tailored to support strong plasmon resonant modes in the visible wavelengths. After determining the accurate geometric dimensions for the presented antisymmetric nanostructure, we designed a dimer array that shows complex behavior during exposure to different incident polarizations. We verified that the examined dimer was able to support destructive interference between dark and bright plasmon modes, which resulted in a pronounced Fano-like dip. Observation of a Fano minimum in such a simple molecular orientation of subwavelength particles opens new avenues for employing this structure in designing various practical plasmonic devices. Depositing the final dimer in a strong coupling condition on a semiconductor metasurface and measuring the effective refractive index at certain wavelengths, we demonstrate that each one of dimer units can be considered a meta-atom due to the high aspect ratio in the geometric parameters. Using this method, by extending the number of dimers periodically and illuminating the structure, we examined the isotropic, polarization-dependent, and transmission behavior of the metamaterial configuration. Using numerical methods and calculating the effective refractive indices, we computed and sketched corresponding figure of merit over the transmission window, where the maximum value obtained was 42.3 for Si and 54.6 for gallium phosphide (GaP) substrates.

Tunable room temperature THz sources based on nonlinear mixing in a hybrid optical and THz micro-ring resonator.

We propose and systematically investigate a novel tunable, compact room temperature terahertz (THz) source based on difference frequency generation in a hybrid optical and THz micro-ring resonator. We describe detailed design steps of the source capable of generating THz wave in 0.5-10 THz with a tunability resolution of 0.05 THz by using high second order optical susceptibility (χ((2))) in crystals and polymers. In order to enhance THz generation compared to bulk nonlinear material, we employ a nonlinear optical micro-ring resonator with high-Q resonant modes for infrared input waves. Another ring oscillator with the same outer radius underneath the nonlinear ring with an insulation of SiO2 layer supports the generated THz with resonant modes and out-couples them into a THz waveguide. The phase matching condition is satisfied by engineering both the optical and THz resonators with appropriate effective indices. We analytically estimate THz output power of the device by using practical values of susceptibility in available crystals and polymers. The proposed source can enable tunable, compact THz emitters, on-chip integrated spectrometers, inspire a broader use of THz sources and motivate many important potential THz applications in different fields.