RESUMO
The negatively-charged nitrogen vacancy (NV(-)) center in diamond is of great interest for quantum information processing and quantum key distribution applications due to its highly desirable long coherence times at room temperature. One of the challenges for their use in these applications involves the requirement to further optimize the lifetime and emission properties of the centers. Our results demonstrate the reduction of the lifetime of NV(-) centers, and hence an increase in the emission rate, achieved by modifying the refractive index of the environment surrounding the nanodiamond (ND). By coating the NDs in a polymer film, experimental results and numerical calculations show an average of 63% reduction in the lifetime and an average enhancement in the emission rate by a factor of 1.6. This strategy is also applicable for emitters other than diamond color centers where the particle refractive index is greater than the refractive index of the surrounding media.
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We demonstrate a robust templated approach to pattern thin films of chemical vapor deposited nanocrystalline diamond grown from monodispersed nanodiamond (mdND) seeds. The method works on a range of substrates, and we herein demonstrate the method using silicon, aluminum nitride (AlN), and sapphire substrates. Patterns are defined using photo- and e-beam lithography, which are seeded with mdND colloids and subsequently introduced into microwave assisted chemical vapor deposition reactor to grow patterned nanocrystalline diamond films. In this study, we investigate various factors that affect the selective seeding of different substrates to create high quality diamond thin films, including mdND surface termination, zeta potential, surface treatment, and plasma cleaning. Although the electrostatic interaction between mdND colloids and substrates is the main process driving adherence, we found that chemical reaction (esterification) or hydrogen bonding can potentially dominate the seeding process. Leveraging the knowledge on these different interactions, we optimize fabrication protocols to eliminate unwanted diamond nucleation outside the patterned areas. Furthermore, we have achieved the deposition of patterned diamond films and arrays over a range of feature sizes. This study contributes to a comprehensive understanding of the mdND-substrate interaction that will enable the fabrication of integrated nanocrystalline diamond thin films for microelectronics, sensors, and tissue culturing applications.
Assuntos
Diamante , Microscopia Eletrônica de Varredura , Micro-Ondas , Espectroscopia Fotoeletrônica , Espectroscopia de Infravermelho com Transformada de FourierRESUMO
The negatively charged nitrogen-vacancy (NV-) center in diamond has realized new frontiers in quantum technology. Here, the optical and spin resonances of the NV- center are observed under hydrostatic pressures up to 60 GPa. Our results motivate powerful new techniques to measure pressure and image high-pressure magnetic and electric phenomena. Additionally, molecular orbital analysis and semiclassical calculations provide insight into the effects of compression on the electronic orbitals of the NV- center.
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We numerically demonstrate an optical waveguide structure for the coherent tunnelling adiabatic passage of photons. An alternative coupling scheme is used compared to earlier work. We show that a three rib optical waveguide structure is robust to material loss in the intermediate waveguide and variations to the waveguide parameters. We also present a five rib optical waveguide structure that represents a new class of octave spanning power divider.
Assuntos
Desenho Assistido por Computador , Fótons , Refratometria/instrumentação , Espalhamento de Radiação , Ressonância de Plasmônio de Superfície/instrumentação , Desenho de Equipamento , Análise de Falha de EquipamentoRESUMO
A method for engineering thin (<100 nm) layers of homoepitaxial diamond containing high quality, spectrally stable, isolated nitrogen-vacancy (NV) centres is reported. The photoluminescence excitation linewidth of the engineered NVs are as low as 140 MHz, at temperatures below 12 K, while the spin properties are at a level suitable for quantum memory and spin register applications. This methodology of NV fabrication is an important step toward scalable and practical diamond based photonic devices suitable for quantum information processing.
Assuntos
Diamante/química , Nitrogênio/química , Cristalização , Óptica e Fotônica/instrumentação , Teoria Quântica , Propriedades de Superfície , TemperaturaRESUMO
Room temperature single-photon emission and quantum characterization is reported for isolated defects in zinc oxide. The defects are observed in thin films of both in-house synthesized and commercial zinc oxide nanoparticles. Emission spectra in the red and infrared, second-order photon correlation functions, lifetime measurements, and photon count rates are presented. Both two- and three-state emitters are identified. Sub-band gap absorption and red emission suggest these defects are the zinc vacancy. These results identify a new source of single photons in a readily available wide band gap semiconductor material which has exceptional electrical, optical, and biocompatibility properties.
Assuntos
Fótons , Teoria Quântica , Óxido de Zinco/química , Membranas Artificiais , Nanopartículas/química , Tamanho da Partícula , Propriedades de Superfície , Temperatura , Óxido de Zinco/síntese químicaRESUMO
We demonstrate that a high-Q photonic crystal cavity can be induced by the presence of a nanodiamond (ND) on the air-hole side wall in an otherwise defect-free photonic crystal. The ND itself acts as the perturbation, increasing the average refractive index, necessary to define the cavity; therefore self-aligned with the cavity. Such cavities are potentially useful for exploiting cavity quantum electro-dynamic interactions between fluorescent NDs and the cavity. A single ND can induce a cavity with Q~3 × 10(4) and two or more ND particles can induce a cavity with Q~1.5 × 10(5). We show numerically that perturbing the position and the size of the NDs has little effect on the cavity properties.
RESUMO
Band-edge photonic crystal lasers were fabricated and their temporal characteristics were minutely analyzed using a high resolution up-conversion system. The InGaAs/InP photonic crystal laser operates at room temperature at 1.55 microm with turn on time ranging from 17ps to 30ps.