RESUMO
The reason for the absence of superconductivity in Sr2IrO4 was estimated by photoelectron spectra and photoelectron holograms. The analysis of the La photoelectron hologram concluded that La atoms are substituted to Sr sites. Two O 1s peaks were observed and were identified as the oxygens in the IrO2 and SrO planes by photoelectron holography and density functional theory (DFT) calculations. In the Ir 4f spectrum of Sr2IrO4, an unexpected Ir3+ peak was observed as much as 50% of all of the Ir. The photoelectron hologram of Ir3+ showed a displacement of about 0.15 Å. This displacement is thought to be due to the oxygen vacancies in the IrO2 plane. These oxygen vacancies and the associated local displacement of the atoms might inhibit superconductivity in spite of sufficient electron doping.
RESUMO
Lattice defect engineering has attracted attention due to its ability to develop thermoelectric materials with low thermal conductivity. For Mg2Si single crystals (SCs), Si vacancy (VSi) defects can be introduced and consequently result in the formation of dislocation cores. These lattice defects confer Mg2Si SCs with a lower thermal conductivity compared to Mg2Si polycrystals. To reveal a mechanism for the stabilisation of VSi in the Mg2Si SCs, we investigated the effects of oxygen (O) on lattice defects by performing electronic structure calculations, secondary ion mass spectrometry, X-ray photoelectron spectroscopy, and photoelectron holography. On the basis of these calculations, we predicted that O stabilised the formation of VSi when it was located at the Si site or at an interstitial site. All experiments confirmed the presence of O inside the Mg2Si SCs. However, O was suggested to be located not at the specific site in the crystal lattice of Mg2Si but at dislocation cores. The interaction between O and the dislocation cores in the Mg2Si SC is expected to immobilise dislocation cores, leading to the stabilisation of VSi formation.
