Disentangling neighbors and extended range density oscillations in monatomic amorphous semiconductors.

High energy x-ray diffraction measurements of pure amorphous Ge were made and its radial distribution function (RDF) was determined at high resolution, revealing new information on the atomic structure of amorphous semiconductors. Fine structure in the second peak in the RDF provides evidence that a fraction of third neighbors are closer than some second neighbors; taking this into account leads to a narrow distribution of tetrahedral bond angles, (8.5 ± 0.1)°. A small peak which appears near 5 Å upon thermal annealing shows that some ordering in the dihedral bond-angle distribution takes place during structural relaxation. Extended range order is detected (in both a-Ge and a-Si) which persists to beyond 20 Å, and both the periodicity and its decay length increase upon thermal annealing. Previously, the effect of structural relaxation was only detected at intermediate range, involving reduced tetrahedral bond-angle distortions. These results enhance our understanding of the atomic order in continuous random networks and place significantly more stringent requirements on computer models intending to describe these networks, or their alternatives which attempt to describe the structure in terms of an arrangement of paracrystals.

High-resolution study of (002, 113, 11-1) four-beam diffraction in Si.

The results of a high-resolution study of the (002, 113, 11 ̅1) four-beam diffraction in Si are presented. The incident synchrotron radiation beam was highly monochromated and collimated with a multi-crystal arrangement in a dispersive setup in both vertical and horizontal planes, in an attempt to experimentally approach plane-wave incident conditions. The Renninger scheme was used with the forbidden reflection reciprocal-lattice vector 002 normal to the crystal surface. The azimuthal and polar rotations were performed in the crystal surface plane and the vertical plane correspondingly. The polar angular curves for various azimuthal angles were measured and found to be very close to theoretical computer simulations, with only a small deviation from the plane monochromatic wave. The effect of the strong two-beam 002 diffraction was observed for the first time with the maximum reflectivity close to 80%. The structure factor of the 002 reflection in Si was experimentally determined as zero.

High-resolution study of (222, 113) three-beam diffraction in Ge.

The results of high-resolution analysis of the (222, >113) three-beam diffraction in Ge are presented. For monochromatization and angular collimation of the incident synchrotron beam a multi-crystal arrangement in a dispersive setup in both vertical and horizontal planes was used in an attempt to experimentally approach plane-wave incident conditions. Using this setup, for various azimuthal angles the polar angular curves which are very close to theoretical computer simulations for the plane monochromatic wave were measured. The effect of the strong two-beam 222 diffraction was observed for the first time with the maximum reflectivity close to 60% even though the total reflection of the incident beam into a forbidden reflection was not achieved owing to absorption. The structure factor of the 222 reflection in Ge was experimentally determined.

High-resolution study of dynamical diffraction phenomena accompanying the Renninger (222/113) case of three-beam diffraction in silicon.

X-ray optical schemes capable of producing a highly monochromatic beam with high angular collimation in both the vertical and horizontal planes have been evaluated and utilized to study high-resolution diffraction phenomena in the Renninger (222/113) case of three-beam diffraction in silicon. The effect of the total reflection of the incident beam into the nearly forbidden reflected beam was observed for the first time with the maximum 222 reflectivity at the 70% level. We have demonstrated that the width of the 222 reflection can be varied many times by tuning the azimuthal angle by only a few microrad in the vicinity of the three-beam diffraction region. This effect, predicted theoretically more than 20 years ago, is explained by the enhancement of the 222 scattering amplitude due to the virtual two-stage 000 -->113 -->222 process which depends on the azimuthal angle.

Spatial structure of a focused X-ray beam diffracted from crystals.

The spatial structure of a beam focused by a planar refractive lens and Bragg diffracted from perfect silicon crystals was experimentally studied at the focal plane using a knife-edge scan and a high-resolution CCD camera. The use of refractive lenses allowed for a detailed comparison with theory. It was shown that diffraction leads to broadening of the focused beam owing to the extinction effect and, for a sufficiently thin crystal, to the appearance of a second peak owing to reflection from the back surface. It was found that the spatial structure of the diffracted beam depends on whether the crystal diffracts strongly (dynamically) or weakly (kinematically). The results help to understand the physical origin of the diffracted intensity recorded in a typical microbeam diffraction experiment.

[Significance of some growth factors in the pathogenesis of chronic gastritis in children].

Gastric biopsy specimens taken from 44 children aged 7 to 15 years who had a clinical diagnosis of chronic gastritis (CG) were studied. In Helicobacter pylori (Hp)-associated CG (n = 24), there were accelerated cell regeneration processes in the antral and fundal mucosae as compared with the rate of proliferation and apoptosis in Hp-unassociated CG (n = 20). The increased proliferation of gastric mucosal (GM) elements has been shown to be associated with the high density of EGFR, in Hp-associated CG in particular, which is generally observed in the insufficient level of TGFR-beta. The authors have ascertained the important role and heterodirectional functional load of EGFR and NGFR-beta in the pathogenesis of CG. This disease is characterized by the maximum EGRF expression that is directly correlated with the rate of cell regeneration processes and the activity of an inflammatory process. Moreover, the rate of proliferation and apoptosis are associated with the increased expression of EGRF on the other hand and with the inadequate reperesenation of TGFR-beta on the GM cell membranes, which is particularly prominent in children with Hp-associated CG.

Highly aligned epitaxial nanorods with a checkerboard pattern in oxide films.

One of the central challenges of nanoscience is fabrication of nanoscale structures with well-controlled architectures using planar thin-film technology. Herein, we report that ordered nanocheckerboards in ZnMnGaO4 films were grown epitaxially on single-crystal MgO substrates by utilizing a solid-state method of the phase separation-induced self-assembly. The films consist of two types of chemically distinct and regularly spaced nanorods with mutually coherent interfaces, approximately 4 x 4 x 750 nm3 in size and perfectly aligned along the film growth direction. Surprisingly, a significant in-plane strain, more than 2%, from the substrate is globally maintained over the entire film thickness of about 820 nm. The strain energy from Jahn-Teller distortions and the film-substrate lattice mismatch induce the coherent three-dimensional (3D) self-assembled nanostructure, relieving the volume strain energy while suppressing the formation of dislocations.

Real-time observation of dendrite coarsening in Sn-13%Bi alloy by synchrotron microradiography.

An improved synchrotron microradiography technique is being used to study dendrite growth and coarsening in Sn-13%Bi alloy in real time. The morphology of growing dendrites can be well resolved with reasonable image contrast. Dendrite arm remelting, coalescence, and fragmentation have been observed in a real alloy and in real time during solidification under controlled thermal gradients and cooling rates. This research opens a different window to the study of alloy solidification and enables unambiguous understanding of solidification processes in optically opaque, metallic alloys.

[Influence of beta-radiation on human erythrocyte surface potential under eicosanoid metabolism inhibition]. / Vliianie beta-izlucheniia na poverkhnostnyi potentsial éritrotsitov cheloveka pri ingibirovanii metabolizma éikozanoidov.

The aim of the research consisted in the study of influence of beta-radiation on response of erythrocyte surface potential to inhibitors of eicosanoid metabolism enzymes (cyclo-, lipoxygenase and phospholipase A2). It was shown, that inhibitors of phospholipase A2 (quinacrine, 10-100 microM), cyclooxygenase (aspirin, 10-100 microM) and cyclo- and lipoxygenase (BW755c, 1-100 microM) lowered electrophoretic mobility (EPM) of erythrocytes by 20-30%. An analogous effect can be exerted by beta-radiation. Nonradioactive leucine in the studied concentrations cannot simulate EPM erythrocytes. Response of cellular EPM to these inhibitors depended on their concentration in the incubation medium. Addition of 14C to the incubation medium changed response of EPM of cells to inhibitors of cyclo- and lipoxygenase but not to quinacrine. However beta-radiation fully abolished the stimulative action of nonspecific activator of phospholipase A2 (Ca-independent), H2O2, on cellular EPM. Under these conditions beta-radiation enhanced EPM response to aspirin only at concentration of 100 microM. The EPM response to BW755c is reduced by irradiation at all concentrations with the exception of equal-effective one (10 microM). Data obtained evidence for modification of eicosanoid metabolism by beta-radiation, probably, as a result of phospholipase A2 inhibition, as evident from elimination by radiation of stimulated action of hydrogen peroxide on EPM. The radiation action can also affect the cyclooxygenase lipoxygenase activity ratio, this activity being mediated by cellular membrane signaling systems.

X-ray standing wave analysis of the effect of isotopic composition on the lattice constants of Si and Ge.

The x-ray standing wave (XSW) technique is used to measure the isotopic mass dependence of the lattice constants of Si and Ge. Backreflection allows substrates of moderate crystallinity to be used while high order reflection yields high accuracy. The XSW, generated by the substrate, serves as a reference for the lattice planes of an epilayer of different isotopic composition. Employing XSW and photoemission, the position of the surface planes is determined from which the lattice constant difference Deltaa is calculated. Scaled to DeltaM = 1 amu we find (Deltaa/a) of -0.36x10(-5) and -0.88x10(-5) for Ge and -1.8x10(-5) and -3.0x10(-5) for Si at 300 and 30 K, respectively.

Isotopic mass and lattice constant: X-ray standing wave measurements

The molecular volume of crystals depends on their isotopic masses. This influence originates from the zero-point motion and the resulting small differences in lattice constants. This effect was measured with high precision by using an x-ray standing wave. The standing wave is generated during Bragg reflection and thus is in phase with the planes of the substrate crystal, which is covered with a homoepitaxial film that has a different isotopic composition than the substrate. The positions of the surface planes of the film with respect to the substrate planes are revealed by the photoelectrons excited by the maxima of the standing wave. For germanium-76 on natural germanium(111), a difference in lattice constant of -1.1 x 10(-5) and -2.5 x 10(-5) at 300 and 54 kelvin, respectively, was found. The results are in good agreement with theoretical predictions.