Linking energy loss in soft adhesion to surface roughness.

A mechanistic understanding of adhesion in soft materials is critical in the fields of transportation (tires, gaskets, and seals), biomaterials, microcontact printing, and soft robotics. Measurements have long demonstrated that the apparent work of adhesion coming into contact is consistently lower than the intrinsic work of adhesion for the materials, and that there is adhesion hysteresis during separation, commonly explained by viscoelastic dissipation. Still lacking is a quantitative experimentally validated link between adhesion and measured topography. Here, we used in situ measurements of contact size to investigate the adhesion behavior of soft elastic polydimethylsiloxane hemispheres (modulus ranging from 0.7 to 10 MPa) on 4 different polycrystalline diamond substrates with topography characterized across 8 orders of magnitude, including down to the angstrom scale. The results show that the reduction in apparent work of adhesion is equal to the energy required to achieve conformal contact. Further, the energy loss during contact and removal is equal to the product of the intrinsic work of adhesion and the true contact area. These findings provide a simple mechanism to quantitatively link the widely observed adhesion hysteresis to roughness rather than viscoelastic dissipation.

Quantitative measurement of contact area and electron transport across platinum nanocontacts for scanning probe microscopy and electrical nanodevices.

Conductive modes of atomic force microscopy are widely used to characterize the electronic properties of materials, and in such measurements, contact size is typically determined from current flow. Conversely, in nanodevice applications, the current flow is predicted from the estimated contact size. In both cases, it is very common to relate the contact size and current flow using well-established ballistic electron transport theory. Here we performed 19 electromechanical tests of platinum nanocontacts with in situ transmission electron microscopy to measure contact size and conductance. We also used molecular dynamics simulations of matched nanocontacts to investigate the nature of contact on the atomic scale. Together, these tests show that the ballistic transport equations under-predict the contact size by more than an order of magnitude. The measurements suggest that the low conductance of the contact cannot be explained by the scattering of electrons at defects nor by patchy contact due to surface roughness; instead, the lower-than-expected contact conductance is attributed to approximately a monolayer of insulating surface species on the platinum. Surprisingly, the low conductance persists throughout loading and even after significant sliding of the contact in vacuum. We apply tunneling theory and extract best-fit barrier parameters that describe the properties of this surface layer. The implications of this investigation are that electron transport in device-relevant platinum nanocontacts can be significantly limited by the presence and persistence of surface species, resulting in current flow that is better described by tunneling theory than ballistic electron transport, even for cleaned pure-platinum surfaces and even after loading and sliding in vacuum.

Understanding contact between platinum nanocontacts at low loads: The effect of reversible plasticity.

Metal nanocontacts play a critical role in atomic force microscopy, functional nanostructures, metallic nanoparticles, and nanoscale electromechanical devices. In all cases, knowledge of the area of contact, and its variation with load, is critical for the quantitative prediction of behavior. Often, the contact area is predicted using continuum mechanics models which relate contact size to geometry, material properties, and load. Here we show for platinum nanoprobes that the contact size deviates significantly from these continuum predictions, even at low applied loads and in the absence of irreversible shape change. We use in situ transmission electron microscopy (TEM) with matched molecular dynamics (MD) simulations to investigate the load-dependent size of the contact. Direct measurements of contact radius from MD and TEM exceed the predictions of continuum mechanics by 24%-164%, depending on the model applied. The physical mechanism for this deviation is found to be dislocation activity in the near-surface material, which is fully reversed upon unloading. These findings demonstrate that contact mechanics models are insufficient for predicting contact area in real-world platinum nanostructures, even at ultra-low applied loads.

A simple atomic force microscope-based method for quantifying wear of sliding probes.

Sliding wear is particularly problematic for micro- and nano-scale devices and applications, and is often studied at the small scale to develop practical and fundamental insights. While many methods exist to measure and quantify the wear of a sliding atomic force microscope (AFM) probe, many of these rely on specialized equipment and/or assumptions from continuum mechanics. Here we present a methodology that enables simple, purely AFM-based measurement of wear, in cases where the AFM probe wears to a flat plateau. The rate of volume removal is recast into a form that depends primarily on the time-varying contact area. This contact area is determined using images of sharp spikes, which are analyzed with a simple thresholding technique, rather than requiring sophisticated computer algorithms or continuum mechanics assumptions. This approach enables the rapid determination of volume lost, rate of material removal, normal stress, and interfacial shear stress at various points throughout the wear experiment. The method is demonstrated using silicon probes sliding on an aluminum oxide substrate. As a validation for the present method, direct imaging in the transmission electron microscope is used to verify the method's parameters and results. Overall, it is envisioned that this purely AFM-based methodology will enable higher-throughput wear experiments and direct hypothesis-based investigation into the science of wear and its dependence on different variables.

Combining TEM, AFM, and Profilometry for Quantitative Topography Characterization Across All Scales.

Surface roughness affects the functional properties of surfaces, including adhesion, friction, hydrophobicity, biological response, and electrical and thermal transport properties. However, experimental investigations to quantify these links are often inconclusive because surfaces are fractal-like, and the values of measured roughness parameters depend on measurement size. Here, we demonstrate the characterization of topography of an ultrananocrystalline diamond (UNCD) surface at the angstrom scale using transmission electron microscopy (TEM), as well as its combination with conventional techniques to achieve a comprehensive surface description spanning 8 orders of magnitude in size. We performed more than 100 individual measurements of the nanodiamond film using both TEM and conventional techniques (stylus profilometry and atomic force microscopy). While individual measurements of root-mean-square (RMS) height, RMS slope, and RMS curvature vary by orders of magnitude, we combine the various techniques using the power spectral density and use this to compute scale-independent parameters. This analysis reveals that "smooth" UNCD surfaces have an RMS slope greater than 1, even larger than the slope of the Austrian Alps when measured on the scale of a human step. This approach of comprehensive multiscale roughness characterization, measured with angstrom-scale detail, will enable the systematic evaluation and optimization of other technologically relevant surfaces, as well as systematic testing of the many analytical and numerical models for the behavior of rough surfaces.

Sub-10 Nanometer Feature Size in Silicon Using Thermal Scanning Probe Lithography.

High-resolution lithography often involves thin resist layers which pose a challenge for pattern characterization. Direct evidence that the pattern was well-defined and can be used for device fabrication is provided if a successful pattern transfer is demonstrated. In the case of thermal scanning probe lithography (t-SPL), highest resolutions are achieved for shallow patterns. In this work, we study the transfer reliability and the achievable resolution as a function of applied temperature and force. Pattern transfer was reliable if a pattern depth of more than 3 nm was reached and the walls between the patterned lines were slightly elevated. Using this geometry as a benchmark, we studied the formation of 10-20 nm half-pitch dense lines as a function of the applied force and temperature. We found that the best pattern geometry is obtained at a heater temperature of ∼600 °C, which is below or close to the transition from mechanical indentation to thermal evaporation. At this temperature, there still is considerable plastic deformation of the resist, which leads to a reduction of the pattern depth at tight pitch and therefore limits the achievable resolution. By optimizing patterning conditions, we achieved 11 nm half-pitch dense lines in the HM8006 transfer layer and 14 nm half-pitch dense lines and L-lines in silicon. For the 14 nm half-pitch lines in silicon, we measured a line edge roughness of 2.6 nm (3σ) and a feature size of the patterned walls of 7 nm.