Anisotropic Magnetoresistance Evaluation of Electrodeposited Ni80Fe20 Thin Film on Silicon.

In this study, a simple growth of permalloy NiFe (Py) thin films on a semiconductive Si substrate using the electrochemical deposition method is presented. The electrodeposition was performed by applying a direct current of 2 mA/cm2 during different times of 120 and 150 s and thin films with different thicknesses of 56 and 70 nm were obtained, respectively. The effect of Py thickness on the magnetic properties of thin films was investigated. Field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM), ferromagnetic resonance (FMR), anisotropic magnetoresistance (AMR), and magneto-optic Kerr effect (MOKE) analyses were performed to characterize the Py thin films. It was observed that the coercivity of the Py thin film increases by increasing the thickness of the layer. Microscopic images of the layers indicated granular growth of the Py thin films with different roughness values leading to different magnetic properties. The magnetic resonance of the Py thin films was measured to fully describe the magnetic properties of the layers. The magnetoresistance ratios of deposited Py thin films at times of 120 and 150 s were obtained as 0.226% and 0.235%, respectively. Additionally, the damping constant for the deposited sample for 120 s was estimated as 1.36 × 10-2, which is comparable to expensive sputtered layers' characteristics.

Characterization of the Nano-Rod Arrays of Pyrite Thin Films Prepared by Aqueous Chemical Growth and a Subsequent Sulfurization.

Pyrite is an earth-abundant and low-cost material with a specific collection of properties including a low band gap and high absorption coefficient of solar light. These properties make pyrite a good choice in a wide variety of applications such as catalysts, batteries, and photovoltaic devices. A thin film composed of vertically aligned pyrite nano-rods was processed via a hydration-condensation method followed by subsequent aging and sulfurization. In this process, no ionic salt was used which resulted in a lower cost process with a lower level of impurities. Field emission scanning electron microscopy, X-ray diffraction, and Raman spectroscopy analyses were used to characterize the thin films in different steps of the process. The major impurity of the final thin films was the marcasite phase according to the Raman analysis which could be minimized by lowering sulfurizing time to about 60 min. In addition, after structural, electrical, and optical characterization of thin films, these layers' performances in a photovoltaic device were also examined. After deposition of a thin aluminum layer, Schottky-type solar cells of pyrite formed which were then illuminated to measure their current-voltage characteristics. The results show that a combination of low-cost materials and a low-cost preparation method is applicable for building future solar cells.