Radiation effects in solid nitrogen and nitrogen-containing matrices: fingerprints of N4⁺ species.

The radiation effects and relaxation processes in solid N2 and N2-doped Ne matrices, preirradiated by an electron beam, have been studied in the temperature range of 5-40 and 5-15 K, respectively. The study was performed using luminescence methods: cathodoluminescence CL and developed by our group nonstationary luminescence NsL, as well as optical and current activation spectroscopy methods: spectrally resolved thermally stimulated luminescence TSL and exoelectron emission TSEE. An appreciable accumulation of N radicals, N(+), N2(+) ions, and trapped electrons is found in nitrogen-containing Ne matrices. Neutralization reactions were shown to dominate relaxation scenario in the low-temperature range, while at higher temperatures diffusion-controlled reactions of neutral species contribute. It was conceived that in α-phase of solid N2, the dimerization reaction (N2(+) + N2 → N4(+)) proceeds: "hole self-trapping". Tetranitrogen cation N4(+) manifests itself by the dissociative recombination reaction with electron: N4(+) + e(-) → N2*(a'(1)Σ(u)(-)) + N2 → N2 + N2 + hν. In line with this assumption, we observed a growth of the a'(1)Σ(u)(-) → X(1)Σ(g)(+) transition intensity with an exposure time in CL spectra and the emergence of this emission in the course of electron detrapping on sample heating in the TSL and NsL experiments.

Charging effects in an electron bombarded Ar matrix and the role of chemiluminescence-driven relaxation.

The relaxation processes in pure and doped Ar films preirradiated by an electron beam are studied with the focus on charging effects. Correlated real time measurements have been performed applying current and optical activation spectroscopy methods. Thermally stimulated exoelectron emission and thermally stimulated luminescence are detected in the vacuum ultraviolet and visible range. An appreciable accumulation of electrons in the matrix is found, and prerequisites for negative space charge formation are ascertained. The part played by pre-existing and radiation-induced defects as well as dopants is considered and the temperature range of the electron trap stability is elucidated. It is shown that laser-induced electron detachment from O(-) centers results in an enhancement of electron detrapping via the chemiluminescence mechanism, viz. neutralized and thermally mobilized O atoms recombine. Formation of O(2)* results in the emission of visible photons. These photons act as a stimulating factor for electron release and transport, terminating in exoelectron emission and charge recombination. Chemiluminescence therefore plays an important role in the decay of charged centers.