Method for Surface Characterization Using Solid-State Nuclear Magnetic Resonance Spectroscopy Demonstrated on Nanocrystalline ZnO:Al.

Nanoscale zinc-oxide doped with aluminum ZnO:Al is studied by different techniques targeting surface changes induced by the conditions at which ZnO:Al is used as support material in the catalysis of methanol. While it is well established that a variety of 1H and 27Al resonances can be found by solid-state NMR for this material, it was not clear yet which signals are related to species located close to the surface of the material and which to species located in the bulk. To this end, a method is suggested that makes use of a paramagnetically impregnated material to suppress NMR signals close to the particle surface in the blind sphere around the paramagnetic metal atoms. It is shown that it is important to use conditions that guarantee a stable reference system relative to which it can be established whether the coating procedure is conserving the original structure or not. This method, called paramagnetically assisted surface peak assignment, helped to assign the 1H and 27Al NMR peaks to the bulk and the surface layer defined by the blind sphere of the paramagnetic atoms. The assignment results are further corroborated by the results from heteronuclear 27Al{1H} dipolar dephasing experiments, which indicate that the hydrogen atoms are preferentially located in the surface layer and not in the particle core.

III-Nitride Magnetron Sputter Epitaxy on Si: Controlling Morphology, Crystal Quality, and Polarity Using Al Seed Layers.

Group III-nitride semiconductors have been subject of intensive research, resulting in the maturing of the material system and adoption of III-nitrides in modern optoelectronics and power electronic devices. Defined film polarity is an important aspect of III-nitride epitaxy as the polarity affects the design of electronic devices. Magnetron sputtering is a novel approach for cost-effective epitaxy of III-nitrides nearing the technological maturity needed for device production; therefore, control of film polarity is an important technological milestone. In this study, we show the impact of Al seeding on the AlN/Si interface and resulting changes in crystal quality, film morphology, and polarity of GaN/AlN stacks grown by magnetron sputter epitaxy. X-ray diffraction measurements demonstrate the improvement of the crystal quality of the AlN and subsequently the GaN film by the Al seeding. Nanoscale structural and chemical investigations using scanning transmission electron microscopy reveal the inversion of the AlN film polarity. It is proposed that N-polar growth induced by Al seeding is related to the formation of a polycrystalline oxygen-rich AlN interlayer partially capped by an atomically thin Si-rich layer at the AlN/Si interface. Complementary aqueous KOH etch studies of GaN/AlN stacks demonstrate that purely metal-polar and N-polar layers can be grown on a macroscopic scale by controlling the amount of Al seeding.

Synthesis and in-depth structure determination of a novel metastable high-pressure CrTe3 phase.

This study reports the synthesis and crystal structure determination of a novel CrTe3 phase using various experimental and theoretical methods. The average stoichiometry and local phase separation of this quenched high-pressure phase were characterized by ex situ synchrotron powder X-ray diffraction and total scattering. Several structural models were obtained using simulated annealing, but all suffered from an imperfect Rietveld refinement, especially at higher diffraction angles. Finally, a novel stoichiometrically correct crystal structure model was proposed on the basis of electron diffraction data and refined against powder diffraction data using the Rietveld method. Scanning electron microscopy-energy-dispersive X-ray spectrometry (EDX) measurements verified the targeted 1:3 (Cr:Te) average stoichiometry for the starting compound and for the quenched high-pressure phase within experimental errors. Scanning transmission electron microscopy (STEM)-EDX was used to examine minute variations of the Cr-to-Te ratio at the nanoscale. Precession electron diffraction (PED) experiments were applied for the nanoscale structure analysis of the quenched high-pressure phase. The proposed monoclinic model from PED experiments provided an improved fit to the X-ray patterns, especially after introducing atomic anisotropic displacement parameters and partial occupancy of Cr atoms. Atomic resolution STEM and simulations were conducted to identify variations in the Cr-atom site-occupancy factor. No significant variations were observed experimentally for several zone axes. The magnetic properties of the novel CrTe3 phase were investigated through temperature- and field-dependent magnetization measurements. In order to understand these properties, auxiliary theoretical investigations have been performed by first-principles electronic structure calculations and Monte Carlo simulations. The obtained results allow the observed magnetization behavior to be interpreted as the consequence of competition between the applied magnetic field and the Cr-Cr exchange interactions, leading to a decrease of the magnetization towards T = 0 K typical for antiferromagnetic systems, as well as a field-induced enhanced magnetization around the critical temperature due to the high magnetic susceptibility in this region.

Self-Modification of Defective TiO2 under Controlled H2/Ar Gas Environment and Dynamics of Photoinduced Surface Oxygen Vacancies.

In recent years, defective TiO2 has caught considerable research attention because of its potential to overcome the limits of low visible light absorption and fast charge recombination present in pristine TiO2 photocatalysts. Among the different synthesis conditions for defective TiO2, ambient pressure hydrogenation with the addition of Ar as inert gas for safety purposes has been established as an easy method to realize the process. Whether the Ar gas might still influence the resulting photocatalytic properties and defective surface layer remains an open question. Here, we reveal that the gas flow ratio between H2 and Ar has a crucial impact on the defective structure as well as the photocatalyic activity of TiO2. In particular, transmission electron microscopy (TEM) in combination with electron energy loss spectroscopy (EELS) revealed a larger width of the defective surface layer when using a H2/Ar (50 %-50 %) gas mixture over pure H2. A possible reason could be the increase in dynamic viscosity of the gas mixture when Ar is added. Additionally, photoinduced enhanced Raman spectroscopy (PIERS) is implemented as a complementary approach to investigate the dynamics of the defective structures under ambient conditions which cannot be effortlessly realized by vacuum techniques like TEM.

Plasma-Engineering of Oxygen Vacancies on NiCo2O4 Nanowires with Enhanced Bifunctional Electrocatalytic Performance for Rechargeable Zinc-air Battery.

Designing an efficient, durable, and inexpensive bifunctional electrocatalyst toward oxygen evolution reactions (OER) and oxygen reduction reactions (ORR) remains a significant challenge for the development of rechargeable zinc-air batteries (ZABs). The generation of oxygen vacancies plays a vital role in modifying the surface properties of transition-metal-oxides (TMOs) and thus optimizing their electrocatalytic performances. Herein, a H2/Ar plasma is employed to generate abundant oxygen vacancies at the surfaces of NiCo2O4 nanowires. Compared with the Ar plasma, the H2/Ar plasma generated more oxygen vacancies at the catalyst surface owing to the synergic effect of the Ar-related ions and H-radicals in the plasma. As a result, the NiCo2O4 catalyst treated for 7.5 min in H2/Ar plasma exhibited the best bifunctional electrocatalytic activities and its gap potential between Ej = 10 for OER and E1/2 for ORR is even smaller than that of the noble-metal-based catalyst. In situ electrochemical experiments are also conducted to reveal the proposed mechanisms for the enhanced electrocatalytic performance. The rechargeable ZABs, when equipped with cathodes utilizing the aforementioned catalyst, achieved an outstanding charge-discharge gap, as well as superior cycling stability, outperforming batteries employing noble-metal catalyst counterparts.

Hybrid Aeromaterials for Enhanced and Rapid Volumetric Photothermal Response.

Conversion of light into heat is essential for a broad range of technologies such as solar thermal heating, catalysis and desalination. Three-dimensional (3D) carbon nanomaterial-based aerogels have been shown to hold great promise as photothermal transducer materials. However, until now, their light-to-heat conversion is limited by near-surface absorption, resulting in a strong heat localization only at the illuminated surface region, while most of the aerogel volume remains unused. We present a fabrication concept for highly porous (>99.9%) photothermal hybrid aeromaterials, which enable an ultrarapid and volumetric photothermal response with an enhancement by a factor of around 2.5 compared to the pristine variant. The hybrid aeromaterial is based on strongly light-scattering framework structures composed of interconnected hollow silicon dioxide (SiO2) microtubes, which are functionalized with extremely low amounts (in order of a few µg cm-3) of reduced graphene oxide (rGO) nanosheets, acting as photothermal agents. Tailoring the density of rGO within the framework structure enables us to control both light scattering and light absorption and thus the volumetric photothermal response. We further show that by rapid and repeatable gas activation, these transducer materials expand the field of photothermal applications, like untethered light-powered and light-controlled microfluidic pumps and soft pneumatic actuators.

A Comparative Study of Pt/Al0.72Sc0.28N/Pt-Based Thin-Film Metal-Ferroelectric-Metal Capacitors on GaN and Si Substrates.

AlxSc1-xN is a nitride-ferroelectric compatible with both CMOS and GaN technology. The origin of ferroelectricity in these ternary nitrides relies on the full inversion of nitrogen atom positions, which is a significantly different structural mechanism than conventional perovskites. Therefore, its ferroelectric characteristics exhibit a high remanent polarization and a tunable coercive field but suffer heavily from leakage currents during the switching event. In this article, we studied epitaxially grown Al0.72Sc0.28N thin films on epitaxial Pt electrode layers deposited on GaN/Al2O3 substrates. The results are compared both structurally and electrically with similar systems on SiO2/Si substrates. Our X-ray diffraction analysis showed that Al0.72Sc0.28N/epi-Pt/GaN is always a complete epitaxial stack without any significant strain gradient. Electrically, this system has an overall lower leakage current and coercive field compared to directly grown, highly crystalline, strained epitaxial Al0.72Sc0.28N/GaN, despite having a lower crystalline quality of the ferroelectric layer. In addition, decreasing the epi-Pt thickness from 100 to 10 nm resulted in further improvement of the leakage profile, which we attribute to a decrease in surface roughness in the thinner Pt. In contrast, the dominant factor of leakage in a fiber-textured system on Si substrates is the Pt(111) texture. Finally, with the combination of in-plane X-ray diffraction and high-resolution scanning transmission electron microscopy, we have demonstrated an all-epitaxial 20 nm Al0.72Sc0.28N/Pt/GaN MFM stack with a sharp interface thickness of less than 1 nm.

In-Grain Ferroelectric Switching in Sub-5 nm Thin Al0.74 Sc0.26 N Films at 1 V.

Analog switching in ferroelectric devices promises neuromorphic computing with the highest energy efficiency if limited device scalability can be overcome. To contribute to a solution, one reports on the ferroelectric switching characteristics of sub-5 nm thin Al0.74 Sc0.26 N films grown on Pt/Ti/SiO2 /Si and epitaxial Pt/GaN/sapphire templates by sputter-deposition. In this context, the study focuses on the following major achievements compared to previously available wurtzite-type ferroelectrics: 1) Record low switching voltages down to 1 V are achieved, which is in a range that can be supplied by standard on-chip voltage sources. 2) Compared to the previously investigated deposition of ultrathin Al1-x Scx N films on epitaxial templates, a significantly larger coercive field (Ec ) to breakdown field ratio is observed for Al0.74 Sc0.26 N films grown on silicon substrates, the technologically most relevant substrate-type. 3) The formation of true ferroelectric domains in wurtzite-type materials is for the first time demonstrated on the atomic scale by scanning transmission electron microscopy (STEM) investigations of a sub-5 nm thin partially switched film. The direct observation of inversion domain boundaries (IDB) within single nm-sized grains supports the theory of a gradual domain-wall driven switching process in wurtzite-type ferroelectrics. Ultimately, this should enable the analog switching necessary for mimicking neuromorphic concepts also in highly scaled devices.

Exchange biased surface acoustic wave magnetic field sensors.

Magnetoelastic composites which use surface acoustic waves show great potential as sensors of low frequency and very low amplitude magnetic fields. While these sensors already provide adequate frequency bandwidth for most applications, their detectability has found its limitation in the low frequency noise generated by the magnetoelastic film. Amongst other contributions, this noise is closely connected to domain wall activity evoked by the strain from the acoustic waves propagating through the film. A successful method to reduce the presence of domain walls is to couple the ferromagnetic material with an antiferromagnetic material across their interface and therefore induce an exchange bias. In this work we demonstrate the application of a top pinning exchange bias stack consisting of ferromagnetic layers of (Fe90Co10)78Si12B10 and Ni81Fe19 coupled to an antiferromagnetic Mn80Ir20 layer. Stray field closure and hence prevention of magnetic edge domain formation is achieved by an antiparallel biasing of two consecutive exchange bias stacks. The set antiparallel alignment of magnetization provides single domain states over the complete films. This results in a reduction of magnetic phase noise and therefore provides limits of detection as low as 28 pT/Hz1/2 at 10 Hz and 10 pT/Hz1/2 at 100 Hz.

Phase evolution, speciation and solubility limit of aluminium doping in zinc oxide catalyst supports synthesized via co-precipitated hydrozincite precursors.

The preparation of Al-doped ZnO via thermal decomposition of crystalline precursors, with a particular emphasis on kinetic effects on the solubility limits, was studied. The promoting effect of Al3+ on the catalyst system is discussed for methanol synthesis where ZnO:Al is employed as a support material for copper nanoparticles. The synthesis of the Al-doped zinc oxides in this study was inspired by the industrial synthesis of the methanol synthesis catalyst via a co-precipitated crystalline precursor, here: hydrozincite Zn5(OH)6(CO3)2. To determine the aluminium speciation and the solubility limit of the aluminium cation on zinc positions, a series of zinc oxides with varying aluminium contents was synthesized by calcination of the precursors. Short precipitate ageing time, low ageing temperature and aluminium contents below 3 mol% metal were advantageous to suppress crystalline side-phases in the precursor, which caused an aluminium segregation and non-uniform aluminium distribution in the solid. Even if zinc oxide was the only crystalline phase, TEM revealed such segregation in samples calcined at 320 °C. Only at very low aluminium contents, the dopant was found preferably on the zinc sites of the zinc oxide structure based on the signal dominating the 27Al NMR spectra. The solubility limit regarding this species was determined to be approximately xAl = 0.013 or 1.3% of all metal cations. Annealing experiments showed that aluminium was kinetically trapped on the site and segregated into ZnAl2O4 upon further heating. This shows that lower calcination temperatures such as applied in catalyst synthesis conserve a higher aluminium doping concentration on that specific site than is expected thermodynamically.

A novel method for the synthesis of core-shell nanoparticles for functional applications based on long-term confinement in a radio frequency plasma.

A novel combined setup of a Haberland type gas aggregation source and a secondary radio frequency discharge is used to generate, confine, and coat nanoparticles over much longer time scales than traditional in-flight treatment. The process is precisely monitored using localized surface plasmon resonance and Fourier-transform infrared spectroscopy as in situ diagnostics. They indicate that both untreated and treated particles can be confined for extended time periods (at least one hour) with minimal losses. During the entire confinement time, the particle sizes do not show considerable alterations, enabling multiple well-defined modifications of the seed nanoparticles in this synthesis approach. The approach is demonstrated by generating Ag@SiO2 nanoparticles with a well-defined surface coating. The in situ diagnostics provide insights into the growth kinetics of the applied coating and are linked to the coating properties by using ex situ transmission electron microscopy and energy dispersive X-ray spectroscopy. Surface coating is shown to occur in two phases: first, singular seeds appear on the particle surface which then grow to cover the entire particle surface over 3 to 5 minutes. Afterwards, deposition occurs via surface growth which coincides with lower deposition rates. Our setup offers full control for various treatment options, which is demonstrated by coating the nanoparticles with a SiO2 layer followed by the etching of the part of the applied coating using hydrogen. Thus, complex multi-step nanofabrication, e.g., using different monomers, as well as very large coating thicknesses is possible.

Synthesis and Nanostructure Investigation of Hybrid ß-Ga2 O3 /ZnGa2 O4 Nanocomposite Networks with Narrow-Band Green Luminescence and High Initial Electrochemical Capacity.

The material design of functional "aero"-networks offers a facile approach to optical, catalytical, or and electrochemical applications based on multiscale morphologies, high large reactive area, and prominent material diversity. Here in this paper, the synthesis and structural characterization of a hybrid ß-Ga2 O3 /ZnGa2 O4 nanocomposite aero-network are presented. The nanocomposite networks are studied on multiscale with respect to their micro- and nanostructure by X-ray diffraction (XRD) and transmission electron microscopy (TEM) and are characterized for their photoluminescent response to UV light excitation and their electrochemical performance with Li-ion conversion reaction. The structural investigations reveal the simultaneous transformation of the precursor aero-GaN(ZnO) network into hollow architectures composed of ß-Ga2 O3 and ZnGa2 O4 nanocrystals with a phase ratio of ≈1:2. The photoluminescence of hybrid aero-ß-Ga2 O3 /ZnGa2 O4 nanocomposite networks demonstrates narrow band (λem  = 504 nm) green light emission of ZnGa2 O4 under UV light excitation (λex  = 300 nm). The evaluation of the metal-oxide network performance for electrochemical application for Li-ion batteries shows high initial capacities of ≈714 mAh g-1 at 100 mA g-1 paired with exceptional rate performance even at high current densities of 4 A g-1 with 347 mAh g-1 . This study provides is an exciting showcase example of novel networked materials and demonstrates the opportunities of tailored micro-/nanostructures for diverse applications a diversity of possible applications.

Automated classification of nanoparticles with various ultrastructures and sizes via deep learning.

Accurately measuring the size, morphology, and structure of nanoparticles is very important, because they are strongly dependent on their properties for many applications. In this paper, we present a deep-learning based method for nanoparticle measurement and classification trained from a small data set of scanning transmission electron microscopy images including overlapping nanoparticles. Our approach is comprised of two stages: localization, i.e., detection of nanoparticles, and classification, i.e., categorization of their ultrastructure. For each stage, we optimize the segmentation and classification by analysis of the different state-of-the-art neural networks. We show how the generation of synthetic images, either using image processing or using various image generation neural networks, can be used to improve the results in both stages. Finally, the application of the algorithm to bimetallic nanoparticles demonstrates the automated data collection of size distributions including classification of complex ultrastructures. The developed method can be easily transferred to other material systems and nanoparticle structures.

Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N.

The discovery of ferroelectricity in aluminum scandium nitride (Al1-xScxN) opens technological perspectives for harsh environments and space-related memory applications, considering the high-temperature stability of piezoelectricity in aluminum nitride. The ferroelectric and material properties of 100 nm-thick Al0.72Sc0.28N are studied up to 873 K, combining both electrical and in situ X-ray diffraction measurements as well as transmission electron microscopy and energy-dispersive X-ray spectroscopy. The present work demonstrates that Al0.72Sc0.28N can achieve high switching polarization and tunable coercive fields in a 375 K temperature range from room temperature up to 673 K. The degradation of the ferroelectric properties in the capacitors is observed above this temperature. Reduction of the effective top electrode area and consequent oxidation of the Al0.72Sc0.28N film are mainly responsible for this degradation. A slight variation of the Sc concentration is quantified across grain boundaries, even though its impact on the ferroelectric properties cannot be isolated from those brought by the top electrode deterioration and Al0.72Sc0.28N oxidation. The Curie temperature of Al0.72Sc0.28N is confirmed to be above 873 K, thus corroborating the promising thermal stability of this ferroelectric material. The present results further support the future adoption of Al1-xScxN in memory technologies for harsh environments like applications in space missions.

Al1-xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansion.

Ferroelectric thin films of wurtzite-type aluminum scandium nitride (Al1−xScxN) are promising candidates for non-volatile memory applications and high-temperature sensors due to their outstanding functional and thermal stability exceeding most other ferroelectric thin film materials. In this work, the thermal expansion along with the temperature stability and its interrelated effects have been investigated for Al1−xScxN thin films on sapphire Al2O3(0001) with Sc concentrations x (x = 0, 0.09, 0.23, 0.32, 0.40) using in situ X-ray diffraction analyses up to 1100 °C. The selected Al1−xScxN thin films were grown with epitaxial and fiber textured microstructures of high crystal quality, dependent on the choice of growth template, e.g., epitaxial on Al2O3(0001) and fiber texture on Mo(110)/AlN(0001)/Si(100). The presented studies expose an anomalous regime of thermal expansion at high temperatures >~600 °C, which is described as an isotropic expansion of a and c lattice parameters during annealing. The collected high-temperature data suggest differentiation of the observed thermal expansion behavior into defect-coupled intrinsic and oxygen-impurity-coupled extrinsic contributions. In our hypothesis, intrinsic effects are denoted to the thermal activation, migration and curing of defect structures in the material, whereas extrinsic effects describe the interaction of available oxygen species with these activated defect structures. Their interaction is the dominant process at high temperatures >800 °C resulting in the stabilization of larger modifications of the unit cell parameters than under exclusion of oxygen. The described phenomena are relevant for manufacturing and operation of new Al1−xScxN-based devices, e.g., in the fields of high-temperature resistant memory or power electronic applications.

Nanosensors Based on a Single ZnO:Eu Nanowire for Hydrogen Gas Sensing.

Fast detection of hydrogen gas leakage or its release in different environments, especially in large electric vehicle batteries, is a major challenge for sensing applications. In this study, the morphological, structural, chemical, optical, and electronic characterizations of ZnO:Eu nanowire arrays are reported and discussed in detail. In particular, the influence of different Eu concentrations during electrochemical deposition was investigated together with the sensing properties and mechanism. Surprisingly, by using only 10 µM Eu ions during deposition, the value of the gas response increased by a factor of nearly 130 compared to an undoped ZnO nanowire and we found an H2 gas response of ∼7860 for a single ZnO:Eu nanowire device. Further, the synthesized nanowire sensors were tested with ultraviolet (UV) light and a range of test gases, showing a UV responsiveness of ∼12.8 and a good selectivity to 100 ppm H2 gas. A dual-mode nanosensor is shown to detect UV/H2 gas simultaneously for selective detection of H2 during UV irradiation and its effect on the sensing mechanism. The nanowire sensing approach here demonstrates the feasibility of using such small devices to detect hydrogen leaks in harsh, small-scale environments, for example, stacked battery packs in mobile applications. In addition, the results obtained are supported through density functional theory-based simulations, which highlight the importance of rare earth nanoparticles on the oxide surface for improved sensitivity and selectivity of gas sensors, even at room temperature, thereby allowing, for instance, lower power consumption and denser deployment.

Al2O3/ZnO Heterostructure-Based Sensors for Volatile Organic Compounds in Safety Applications.

Monitoring volatile organic compounds (VOCs) in harsh environments, especially for safety applications, is a growing field that requires specialized sensor structures. In this work, we demonstrate the sensing properties toward the most common VOCs of columnar Al2O3/ZnO heterolayer-based sensors. We have also developed an approach to tune the sensor selectivity by changing the thickness of the exposed amorphous Al2O3 layer from 5 to 18 nm. Columnar ZnO films are prepared by a chemical solution method, where the exposed surface is decorated with an Al2O3 nanolayer via thermal atomic layer deposition at 75 °C. We have investigated the structure and morphology as well as the vibrational, chemical, electronic, and sensor properties of the Al2O3/ZnO heterostructures. Transmission electron microscopy (TEM) studies show that the upper layers consist of amorphous Al2O3 films. The heterostructures showed selectivity to 2-propanol vapors only within the range of 12-15 nm thicknesses of Al2O3, with the highest response value of ∼2000% reported for a thickness of 15 nm at the optimal working temperature of 350 °C. Density functional theory (DFT) calculations of the Al2O3/ZnO(1010) interface and its interaction with 2-propanol (2-C3H7OH), n-butanol (n-C4H9OH), ethanol (C2H5OH), acetone (CH3COCH3), hydrogen (H2), and ammonia (NH3) show that the molecular affinity for the Al2O3/ZnO(1010) interface decreases from 2-propanol (2-C3H7OH) ≈ n-butanol (n-C4H9OH) > ethanol (C2H5OH) > acetone (CH3COCH3) > hydrogen (H2), which is consistent with our gas response experiments for the VOCs. Charge transfers between the surface and the adsorbates, and local densities of states of the interacting atoms, support the calculated strength of the molecular preferences. Our findings are highly important for the development of 2-propanol sensors and to our understanding of the effect of the heterojunction and the thickness of the top nanolayer on the gas response, which thus far have not been reported in the literature.

Investigation of Wafer-Level Fabricated Permanent Micromagnets for MEMS.

Monolithic integration of permanent micromagnets into MEMS structures offers many advantages in magnetic MEMS applications. A novel technique called PowderMEMS, based on the agglomeration of micron-sized powders by atomic layer deposition (ALD), has been used to fabricate permanent micromagnets on 8-inch wafers. In this paper, we report the fabrication and magnetic characterization of PowderMEMS micromagnets prepared from two different NdFeB powder particle sizes. A remanence of 423 mT and intrinsic coercivity of 924 mT is achieved at the low ALD process temperature of 75 °C, making this process compatible with MEMS technology. The magnetic reversible mechanism in the micromagnets is discussed with the help of the Wohlfarth equation. To ensure the operability of such integrated micromagnets in different application environments, we conducted a set of experiments to systematically investigate the thermal and corrosive stability. NdFeB micromagnets with larger powder particle size (d50 = 25 µm) exhibit high thermal stability in air. Furthermore, the corrosion stability of the micromagnets is significantly improved by an additional silicon oxide passivation layer deposited by plasma-enhanced chemical vapor deposition (PECVD). The presented results demonstrate the durability of PowderMEMS micromagnets, enabling their application in various fields, e.g., microfluidics, sensors, actuators, and microelectronics.

Growth of Highly c-Axis Oriented AlScN Films on Commercial Substrates.

In this work, we present a method for growing highly c-axis oriented aluminum scandium nitride (AlScN) thin films on (100) silicon (Si), silicon dioxide (SiO2) and epitaxial polysilicon (poly-Si) substrates using a substrate independent approach. The presented method offers great advantages in applications such as piezoelectric thin-film-based surface acoustic wave devices where a metallic seed layer cannot be used. The approach relies on a thin AlN layer to establish a wurtzite nucleation layer for the growth of w-AlScN films. Both AlScN thin film and seed layer AlN are prepared by DC reactive magnetron sputtering process where a Sc concentration of 27% is used throughout this study. The crystal quality of (0002) orientation of Al0.73Sc0.27N films on all three substrates is significantly improved by introducing a 20 nm AlN seed layer. Although AlN has a smaller capacitance than AlScN, limiting the charge stored on the electrode plates, the combined piezoelectric coefficient d33,f with 500 nm AlScN is only slightly reduced by about 4.5% in the presence of the seed layer.

Time-dependent investigation of a mechanochemical synthesis of bismuth telluride-based materials and their structural and thermoelectric properties.

Here, we report on the time dependence of a synthesis procedure for generation of both n- and p-type bismuth telluride-based materials. To initiate the reaction, the starting materials were first mechanical pre-reacted. The Rietveld refinements of X-ray diffraction (XRD) data collected after different milling times demonstrate that Bi2Te3 was formed after only 10 min, and longer milling times do not alter the composition. To complete the phase formation, the powders were treated by field-assisted sintering and heat treatment afterwards. The effect of this fast procedure on the structural and thermoelectric properties was investigated. Samples were obtained with relative densities above 99%. A clear preferred orientation of the crystallites in the samples is evidenced by Rietveld refinements of XRD data. The thermoelectric characteristics demonstrate a good performance despite the short milling time. Further, it was demonstrated for this fast synthesis that the physical transport properties can be varied with well-known n- and p-type dopants like CHI3 or Pb. For these non-optimized materials, a ZT value of 0.7 (n-type) and 0.9 (p-type) between 400 and 450 K was achieved. The long-term stability is demonstrated by repeated measurements up to 523 K showing no significant alteration of the thermoelectric performance.