Design and performance of 10-Gb/s L-band REAM-SOA for OLT Transmitter in next generation access networks.

We present a 10-Gb/s L-band reflective electro-absorption modulator integrated with a semiconductor optical amplifier (REAM-SOA) having improved transmission performance at very low input power of seed light. To decrease the input power of seed light, the absorption characteristics of the REAM are adjusted to reduce the amplified spontaneous emission light returned into the SOA, suppressing the gain saturation effect of the SOA. At a considerably low input power of -16 dBm, the REAM-SOA exhibits a low transmission penalty of about 1.2 dB after 50-km SMF transmission. Over a wide input power range from -16 dBm to 5 dBm, a penalty of less than 1.6 dB is achieved at 50-km transmission.

Mitigation of Rayleigh crosstalk using noise suppression technique in 10-Gb/s REAM-SOA.

We demonstrate a mitigation of Rayleigh back-scattering (RBS) impact in 10-Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier (REAM-SOA). The technique is based on the intensity-noise suppression of the centralized incoherent seed-light, which enables smooth evolution of deployed DWDM applications. We exhibit the power penalty of less than 1 dB at the large RBS crosstalk value of about 8 dB when the optical power of seed-light is lowered about -10 dBm.

10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier for colorless WDM-PON.

We demonstrated 10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier (REAM-SOA) using simplified fabrication process. Good performance at 10.7 Gb/s was obtained with an extinction ratio of > 10 dB and a power penalty of < 1 dB at a 10(-9) bit error rate (BER) up to 20 km transmission. The device operated over a 50 nm spectral range within 1 dB received power variation at a 10(-9) BER.

Improvement of modulation bandwidth in multisection RSOA for colorless WDM-PON.

We demonstrated two-section reflective semiconductor optical amplifier (RSOA) with dramatic improvement of small-signal modulation bandwidth above 10 GHz as colorless source for wavelength division multiplexed-passive optical network (WDM-PON). The device provides the fiber-to-fiber gain of 22.8 dB, 3-dB amplified spontaneous emission (ASE) bandwidth of 30 nm, and ripple of 1.5 dB. Good performance at 2.5 Gbps was obtained with an extinction ratio of 8 dB and a power penalty of 2 dB at a 10(-9) bit error rate (BER) up to 20 km transmission.

Loss-coupled distributed-feedback lasers with amplified optical feedback for optical microwave generation.

Multisection semiconductor lasers for optical microwave generation have been fabricated that consist of a loss-coupled distributed feedback (LC-DFB), a phase control, and an amplifier section. High-frequency self-pulsations are generated according to the concept of a single-mode laser with short optical feedback. The effect of the optical feedback via the phase control and the amplifier section on the self-pulsation is apparently shown as a result of the superior single-mode characteristic of the LC-DFB section. Continuous frequency tuning is achieved in the range of 17-35 GHz.