Sudden Unilateral Visual Loss Due to an Onodi Cell Mucocele.

In a patient whose sudden vision loss is suspected on the side of a previously operated sphenoid or ethmoid sinus, an ischemic insult to the optic nerve may occur due to a compressing mucocele, especially when there is bony dehiscence of the orbital apex. We report a case of a 41-year-old healthy male patient who had a history of previous sinus surgery, and visited the emergency department for an abrupt left ocular pain following visual loss of the affected eye. The patient's left eye's best corrected visual acuity (BCVA) was hand motions with a reduced light reflex. A sphenoethmoidal sinus cell (Onodi cell) mucocele with bone dehiscence in the left orbital apex was seen on computed tomography. Upon suspicion of compressive ischemic optic neuropathy, urgent endoscopy-assisted endonasal marsupialization of the Onodi cell mucocele with high-dose pulse intravenous dexamethasone was performed. The pathology showed an inflamed nasal mucosa, confirming a mucocele. On the second postoperative day, his BCVA slightly improved in counting fingers at 30 cm. However, even though the nasalized Onodi cell remained intact, his eyesight did not show further improvement. The optic nerve may be directly insulted when a mucocele in the Onodi cell takes place, especially when there is bony dehiscence in the orbital apex. Despite accelerated surgical marsupialization and high-dose steroids, the chance of visual recovery remains very low, as demonstrated in our case.

Junctionless Electric-Double-Layer MoS2 Field-Effect Transistor with a Sub-5 nm Thick Electrostatically Highly Doped Channel.

Junctionless transistors are suitable for sub-3 nm applications because of their extremely simple structure and high electrical performance, which compensate for short-channel effects. Two-dimensional semiconductor transition-metal dichalcogenide materials, such as MoS2, may also resolve technical and fundamental issues for Si-based technology. Here, we present the first junctionless electric-double-layer field-effect transistor with an electrostatically highly doped 5 nm thick MoS2 channel. A double-gated MoS2 transistor with an ionic-liquid top gate and a conventional bottom gate demonstrated good transfer characteristics with a 104 on-off current ratio, a 70 mV dec-1 subthreshold swing at a 0 V bottom-gate bias, and drain-current versus top-gate-voltage characteristics were shifted left significantly with increasing bottom-gate bias due to an electrostatically increased overall charge carrier concentration in the MoS2 channel. When a bottom-gate bias of 80 V was applied, a shoulder and two clear peak features were identified in the transconductance and its derivative, respectively; this outcome is typical of Si-based junctionless transistors. Furthermore, the decrease in electron mobility induced by a transverse electric field was reduced with increasing bottom-gate bias. Numerical simulations and analytical models were used to support these findings, which clarify the operation of junctionless MoS2 transistors with an electrostatically highly doped channel.

Treatment of impacted double teeth using 3D surgical simulation in a school-age child: a case report.

This report presents the therapeutic approach and results of a case of impacted undeveloped double teeth using 3D simulation in a school-age child. A 10-year-old girl was referred to hospital for the evaluation and treatment of fully impacted premolar double teeth in the left maxillary area. After evaluation, the double teeth were surgically removed, hemisected, and replanted after modification. For accurate surgery, replicas were made of the double teeth using CBCT and a 3D printer, and several mock surgeries were performed. Although remarkable signs for clinical and radiologic pathology were not found at the 5-month follow-up, short root with infraocclusion was found at the 30-month follow-up. This treatment widened the treatment spectrum with modern diagnostic approaches and preparation in large double teeth in children.

Energy-Efficient III-V Tunnel FET-Based Synaptic Device with Enhanced Charge Trapping Ability Utilizing Both Hot Hole and Hot Electron Injections for Analog Neuromorphic Computing.

A charge trap device based on field-effect transistors (FET) is a promising candidate for artificial synapses because of its high reliability and mature fabrication technology. However, conventional MOSFET-based charge trap synapses require a strong stimulus for synaptic update because of their inefficient hot-carrier injection into the charge trapping layer, consequently causing a slow speed operation and large power consumption. Here, we propose a highly efficient charge trap synapse using III-V materials-based tunnel field-effect transistor (TFET). Our synaptic TFETs present superior subthreshold swing and improved charge trapping ability utilizing both carriers as charge trapping sources: hot holes created by impact ionization in the narrow bandgap InGaAs after being provided from the p+-source, and band-to-band tunneling hot electrons (BBHEs) generated at the abrupt p+n junctions in the TFETs. Thanks to these advances, our devices achieved outstanding efficiency in synaptic characteristics with a 5750 times faster synaptic update speed and 51 times lower sub-fJ/um2 energy consumption per single synaptic update in comparison to the MOSFET-based synapse. An artificial neural network (ANN) simulation also confirmed a high recognition accuracy of handwritten digits up to ∼90% in a multilayer perceptron neural network based on our synaptic devices.

Tailoring the Electrical Characteristics of MoS2 FETs through Controllable Surface Charge Transfer Doping Using Selective Inkjet Printing.

Surface charge transfer doping (SCTD) has been regarded as an effective approach to tailor the electrical characteristics of atomically thin transition metal dichalcogenides (TMDs) in a nondestructive manner due to their two-dimensional nature. However, the difficulty of achieving rationally controlled SCTD on TMDs via conventional doping methods, such as solution immersion and dopant vaporization, has impeded the realization of practical optoelectronic and electronic devices. Here, we demonstrate controllable SCTD of molybdenum disulfide (MoS2) field-effect transistors using inkjet-printed benzyl viologen (BV) as an n-type dopant. By adjusting the BV concentration and the areal coverage of inkjet-printed BV dopants, controllable SCTD results in BV-doped MoS2 FETs with elaborately tailored electrical performance. Specifically, the suggested solvent system creates well-defined droplets of BV ink having a volume of ∼2 pL, which allows the high spatial selectivity of SCTD onto the MoS2 channels by depositing the BV dopant on demand. Our inkjet-printed SCTD method provides a feasible solution for achieving controllable doping to modulate the electrical and optical performances of TMD-based devices.

Simulator acceleration and inverse design of fin field-effect transistors using machine learning.

The simulation and design of electronic devices such as transistors is vital for the semiconductor industry. Conventionally, a device is intuitively designed and simulated using model equations, which is a time-consuming and expensive process. However, recent machine learning approaches provide an unprecedented opportunity to improve these tasks by training the underlying relationships between the device design and the specifications derived from the extensively accumulated simulation data. This study implements various machine learning approaches for the simulation acceleration and inverse-design problems of fin field-effect transistors. In comparison to traditional simulators, the proposed neural network model demonstrated almost equivalent results (R2 = 0.99) and was more than 122,000 times faster in simulation. Moreover, the proposed inverse-design model successfully generated design parameters that satisfied the desired target specifications with high accuracies (R2 = 0.96). Overall, the results demonstrated that the proposed machine learning models aided in achieving efficient solutions for the simulation and design problems pertaining to electronic devices. Thus, the proposed approach can be further extended to more complex devices and other vital processes in the semiconductor industry.

Restricted Channel Migration in 2D Multilayer ReS2.

When thickness-dependent carrier mobility is coupled with Thomas-Fermi screening and interlayer resistance effects in two-dimensional (2D) multilayer materials, a conducting channel migrates from the bottom surface to the top surface under electrostatic bias conditions. However, various factors including (i) insufficient carrier density, (ii) atomically thin material thickness, and (iii) numerous oxide traps/defects considerably limit our deep understanding of the carrier transport mechanism in 2D multilayer materials. Herein, we report the restricted conducting channel migration in 2D multilayer ReS2 after a constant voltage stress of gate dielectrics is applied. At a given gate bias condition, a gradual increase in the drain bias enables a sensitive change in the interlayer resistance of ReS2, leading to a modification of the shape of the transconductance curves, and consequently, demonstrates the conducting channel migration along the thickness of ReS2 before the stress. Meanwhile, this distinct conduction feature disappears after stress, indicating the formation of additional oxide trap sites inside the gate dielectrics that degrade the carrier mobility and eventually restrict the channel migration. Our theoretical and experimental study based on the resistor network model and Thomas-Fermi charge screening theory provides further insights into the origins of channel migration and restriction in 2D multilayer devices.

Metal-Contact Improvement in a Multilayer WSe2 Transistor through Strong Hot Carrier Injection.

Hot carrier injection (HCI), occurring when the horizontal electric field is strongly applied, usually affects the degradation of nanoelectronic devices. In addition, metal contacts play a significant role in nanoelectronic devices. In this study, Schottky contacts in multilayer tungsten diselenide (WSe2) field-effect transistors (FETs) by hot carrier injection (HCI), occurring when a high drain voltage is applied, is investigated. A small number of hot carriers with high energy reduces the Schottky barrier height and improves the performance of FETs effectively rather than damaging the channel. Thermal annealing at the end of the fabrication process increases device performance by causing interfacial reactions of the source/drain electrodes. HCI causes a significant enhancement in the local asymmetry, especially in the subthreshold region. The subthreshold swing (SS) of the thermally annealed FETs is significantly improved from 9.66 to 0.562 V dec-1 through the energy of HCI generated by a strong horizontal electric field. In addition, the contact resistances (RSD), also called series resistances, extracted by a four-probe measurement and a Y-function method were also improved by decreasing to a 10th through the energy of HCI. To understand the asymmetrical characteristics of the channel after the stress, we performed electrical analysis, electrostatic force microscopy (EFM), and Raman spectroscopy.

Ultrasound-guided sialo-irrigation for the treatment of chronic sialodochitis with sialolithiasis.

Sialolithiasis is one of the most common causes of salivary duct obstruction. In the last 20 years, minimally invasive procedures like sialendoscopy, extracorporeal lithotripsy, and basket snaring are increasingly being used for the treatment of salivary gland duct stones. Sialo-irrigation of the salivary gland is an effective procedure for treating inflammation and providing symptomatic relief. This procedure can be employed for the treatment of sialolithiasis using the back pressure of instilled saline. Sialo-irrigation under ultrasound (US) guidance allows for dynamic studies showing real-time images during diagnostic or surgical procedure and can be used for the removal of sialoliths. In addition, it can also be used to remove primitive sialoliths and microliths by washing out the ductal system, which prevents the recurrence of sialoliths. The aim of this study was to propose a minimally invasive technique for sialolithiasis using US-guided sialo-irrigation.

Radiation dosimetry analyses of radiographic imaging systems used for orthodontic treatment: comparison among child, adolescent, and adult patients.

OBJECTIVES: The aim of this study was to compare the effective doses of orthodontic radiographs in children, adolescents, and adults. METHODS: We exposed a child, an adolescent (simulated by an adult female phantom), and adult male phantoms using common scanning protocols for panoramic radiography, cephalography, and cone-beam computed tomography (CBCT). Glass dosimeters were placed in the organs of the phantom to measure the absorbed doses. The effective doses were deduced using tissue weighting factors as defined in the ICRP Publication 103. RESULTS: For panoramic imaging, the parotid gland had the highest absorbed dose in the child and the submandibular glands had the highest absorbed dose in both the adolescent and adult phantoms. For cephalography, the organs and tissues located closest to the X-ray tube had the highest absorbed dose values. For CBCT, the lenses of the eyes received the highest absorbed dose. Effective doses with CBCT were the greatest in the adolescent phantom, followed by in the adult and child phantoms. CONCLUSIONS: Dental practitioners should be aware of patient age, as younger patients will incur greater risks from radiation.

Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET.

Through time-dependent defect spectroscopy and low-frequency noise measurements, we investigate and characterize the differences of carrier trapping processes occurred by different interfaces (top/sidewall) of the gate-all-around silicon nanosheet field-effect transistor (GAA SiNS FET). In a GAA SiNS FET fabricated by the top-down process, the traps at the sidewall interface significantly affect the device performance as the width decreases. Compare to expectations, as the width of the device decreases, the subthreshold swing (SS) increases from 120 to 230 mV/dec, resulting in less gate controllability. In narrow-width devices, the effect of traps located at the sidewall interface is significantly dominant, and the 1/f 2 noise, also known as generation-recombination (G-R) noise, is clearly appeared with an increased time constant (τ i ). In addition, the probability density distributions for the normalized current fluctuations (ΔI D) show only one Gaussian in wide-width devices, whereas they are separated into four Gaussians with increased in narrow-width devices. Therefore, fitting is performed through the carrier number fluctuation-correlated with mobility fluctuations model that separately considered the effects of sidewall. In narrow-width GAA SiNS FETs, consequently, the extracted interface trap densities (N T ) distribution becomes more dominant, and the scattering parameter ([Formula: see text]) distribution increases by more than double.

A 2D material-based floating gate device with linear synaptic weight update.

Neuromorphic computing is of great interest among researchers interested in overcoming the von Neumann computing bottleneck. A synaptic device, one of the key components to realize a neuromorphic system, has a weight that indicates the strength of the connection between two neurons, and updating this weight must have linear and symmetric characteristics. Especially, a transistor-type device has a gate terminal, separating the processes of reading and updating the conductivity, used as a synaptic weight to prevent sneak path current issues during synaptic operations. In this study, we fabricate a top-gated flash memory device based on two-dimensional (2D) materials, MoS2 and graphene, as a channel and a floating gate, respectively, and Al2O3 and HfO2 to increase the tunneling efficiency. We demonstrate the linear weight updates and repeatable characteristics of applying negative/positive pulses, and also emulate spike timing-dependent plasticity (STDP), one of the learning rules in a spiking neural network (SNN).

Upregulation of TRESK Channels Contributes to Motor and Sensory Recovery after Spinal Cord Injury.

TWIK (tandem-pore domain weak inward rectifying K+)-related spinal cord K+ channel (TRESK), a member of the two-pore domain K+ channel family, is abundantly expressed in dorsal root ganglion (DRG) neurons. It is well documented that TRESK expression is changed in several models of peripheral nerve injury, resulting in a shift in sensory neuron excitability. However, the role of TRESK in the model of spinal cord injury (SCI) has not been fully understood. This study investigates the role of TRESK in a thoracic spinal cord contusion model, and in transgenic mice overexpressed with the TRESK gene (TGTRESK). Immunostaining analysis showed that TRESK was expressed in the dorsal and ventral neurons of the spinal cord. The TRESK expression was increased by SCI in both dorsal and ventral neurons. TRESK mRNA expression was upregulated in the spinal cord and DRG isolated from the ninth thoracic (T9) spinal cord contusion rats. The expression was significantly upregulated in the spinal cord below the injury site at acute time points (6, 24, and 48 h) after SCI (p < 0.05). In addition, TRESK expression was markedly increased in DRGs below and adjacent to the injury site. TRESK was expressed in inflammatory cells. In addition, the number and fluorescence intensity of TRESK-positive neurons increased in the dorsal and ventral horns of the spinal cord after SCI. TGTRESK SCI mice showed faster paralysis recovery and higher mechanical threshold compared to wild-type (WT)-SCI mice. TGTRESK mice showed lower TNF-α concentrations in the blood than WT mice. In addition, IL-1ß concentration and apoptotic signals in the caudal spinal cord and DRG were significantly decreased in TGTRESK SCI mice compared to WT-SCI mice (p < 0.05). These results indicate that TRESK upregulated following SCI contributes to the recovery of paralysis and mechanical pain threshold by suppressing the excitability of motor and sensory neurons and inflammatory and apoptotic processes.

Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire.

For use in flexible, printable, wearable electronics, Schottky-barrier field-effect transistors (SB-FETs) with various channel materials including low-dimensional nanomaterials have been considered so far due to their comparatively simple and cost-effective integration scheme free of junction and channel dopants. However, the electric conduction mechanism and the scaling properties underlying their performance differ significantly from those of conventional metal-oxide-semiconductor (MOS) field-effect transistors. Indeed, an understanding of channel length scaling and drain bias impact has not been elucidated sufficiently. Here, multiple ambipolar SB-FETs with different channel lengths have been fabricated on a single silicon nanowire ensuring a constant nanowire diameter. Their length scaling behavior is analyzed through drain current and transconductance contour maps, each depending on the drain and gate bias. The reduced gate control and extended drain field effect on Schottky junctions were observed in short channels. Activation energy measurements showed lower sensitive behavior of the Schottky barrier to gate bias in the short-channel device and confirmed the thinning of Schottky barrier width for electrons at the source interface with drain bias.

Understanding of the aging pattern in quantum dot light-emitting diodes using low-frequency noise.

The negative and positive aging effects of quantum dot (QD) light-emitting diodes (QLEDs) have received considerable attention in recent years and various analysis methods have been discussed. Here, we introduce a new approach to understand the aging effect of QLEDs, which is to diagnose the behavior of carriers and traps at interfaces between each layer of the QLEDs and inside the layers themselves. In particular, low-frequency noise (LFN) measurement and the analysis of current in the QLEDs were introduced to investigate the trapping/de-trapping behaviors of carriers in the defect states in the devices. A flicker noise was observed before the carriers are injected into the QD emitting layer, while the exciton generation-recombination (G-R) noise and shot noise were observed when the electrons were injected. A correlated noise, which is the correlated model of the trapping/de-trapping of the carriers near and/or inside the QDs and the exciton recombination, was also observed above the turn-on voltage. In addition, when the devices were aged with a constant current source, rapid increases in the luminance and external quantum efficiency (EQE) were observed for up to 50 h. After 100 h of the current aging, however, the devices were negatively aged with the reduced EQE. The LFN analysis results imply that the aging phenomena mainly depend on the trapping/de-trapping of carriers. In addition to the LFN analysis, we also investigated the current density-voltage-luminance and capacitance-voltage characteristics of the devices to clarify the aging behaviors in QLEDs.

Cone-beam computed tomography of mandibular foramen and lingula for mandibular anesthesia.

PURPOSE: The positions of the mandibular foramen (MnF) and the lingula affect the success rate of inferior alveolar nerve block. The objective of this study was to investigate aspects of the MnF and the lingula relevant for mandibular block anesthesia using cone-beam computed tomography (CBCT). MATERIALS AND METHODS: Fifty CBCT scans were collected from a picture archiving and communications system. All scans were taken using an Alphard Vega 3030 (Asahi Roentgen Co. Ltd., Kyoto, Japan). Fifty-eight MnFs of 30 subjects were included in the study. The position of the MnF, the size of the MnF, the position of the lingula, the size of the lingula, and the shape of the lingula were measured and recorded. All data were statistically analyzed at a significance level of P<0.05. RESULTS: The position of MnF was 0.1 mm and 0.8 mm below the occlusal plane in males and females, respectively. The horizontal position of the MnF was slightly anterior to the center of the ramus in males and in the center in females (P<0.05). The vertical position of the MnF was lower in females than in males (P<0.05). The MnF was an oval shape with a longer anteroposterior dimension. The height of the lingula was 9.3 mm in males and 8.2 mm in females. The nodular type was the most common shape of the lingula, followed by the triangular, truncated, and assimilated types. CONCLUSION: CBCT provided useful information about the MnF and lingula. This information could improve the success rate of mandibular blocks.

Validation of a three-dimensional printed model for training of surgical extraction of supernumerary teeth.

INTRODUCTION: This study aimed to validate a three-dimensional (3D) printed model to provide training for supernumerary teeth (SNTs) extraction. MATERIALS AND METHODS: Each of the 30 participants, grouped as experienced and without experience, conducted two identically simulated surgeries on a 3D-printed replica of human mixed dentition with a SNT. The surgery time, area of bony window and volume of removed material were measured; subsequently, responses to a five-item questionnaire were recorded. The collected data were statistically analysed. RESULTS: The surgery time was 228.37 ± 141.53 seconds and 125.47 ± 53.03 seconds in the first and second surgery, respectively. The training significantly decreased the surgery time in the participants without experience (P = .000). However, there were no significant differences in the area of window opening (P = .271) and volume of removed material between the two surgeries (P = .075). The participants who perceived educational benefits accounted for more than 60% of the respondents for every question. Participants without experience in SNT extraction showed a tendency to rate a higher score than did those with experience. CONCLUSIONS: A 3D-printed model for surgical extraction of a SNT can improve surgical skill and, especially, shorten the learning curve in beginners.

Real-time effect of electron beam on MoS2 field-effect transistors.

Irradiation of MoS2 field-effect transistors (FETs) fabricated on Si/SiO2 substrates with electron beams (e-beams) below 30 keV creates electron-hole pairs (EHP) in the SiO2, which increase the interface trap density (Nit ) and change the current path in the channel, resulting in performance changes. In situ measurements of the electrical characteristics of the FET performed using a nano-probe system mounted inside a scanning electron microscope show that e-beam irradiation enables both multilayer and monolayer MoS2 channels act as conductors. The e-beams mostly penetrate the channel owing to their large kinetic energy, while the EHPs formed in the SiO2 layer can contribute to the conductance by flowing into the MoS2 channel or inducing the gate bias effect. The analysis of the device parameters in the initial state and the vent-evacuation state after e-beam irradiation can clarify the effect of the interplay between the e-beam-induced EHPs and ambient adsorbates on the carrier behavior, which depends on the thickness of the MoS2 layer. DC and low frequency noise analysis reveals that the e-beam-induced EHPs increase Nit from 109-1010 to 1011 cm-2 eV-1 in both monolayer and multilayer devices, while the interfacial Coulomb scattering parameter αSC increases by three times in the monolayer and decreases to one-tenth of its original value in the multilayer. In other words, an MoS2 layer with a thickness of ∼30 nm is less sensitive to adsorbates by surface screening. Thus, the carrier mobility in the monolayer device decreases from 45.7 to 40 cm2 V-1 s-1, while in the 30 nm-thick multilayer device, it increases from 4.9 to 5.6 cm2 V-1 s-1. This is further evidenced by simulations of the distribution of interface traps and channel carriers in the MoS2 FET before and after e-beam irradiation, demonstrating that Coulomb scattering decreases as the effective channel moves away from the interface.

Axial Triangle of the Maxillary Sinus, and its Surgical Implication With the Position of Maxillary Sinus Septa During Sinus Floor Elevation: A CBCT Analysis.

The aim of this study was to measure the convexity of the lateral wall of the maxillary (Mx) sinus and identify the locational distribution of antral septa in relation to the zygomaticomaxillary buttress (ZMB), in order to suggest another anatomical consideration and surgical modification of sinus floor elevation procedures. This study was designed as a cross-sectional study, and a total of 134 patients and 161 sinuses containing edentulous alveolar ridges were analyzed. The angle between the anterior and lateral walls of the Mx sinus (lateral sinus angle [LSA]), and the angle between the midpalatal line and the anterior sinus wall (anterior sinus angle [ASA]) were measured. Mean LSAs and ASAs were 105.9° ± 9.86° and 58.4° ± 6.43°, respectively. No significant difference between left and right sides was found (LSA, P = .420; right = 105.5° ± 9.27°; left = 105.5° ± 9.27° and ASA, P = .564; right = 57.9° ± 6.80°; left = 58.8° ± 6.02°). The prevalence of septa was 37.3%, and it was most frequently noted in the second molar region (32.8%), followed by the first molar (20.9%), retromolar (16.4%), and second premolar regions (14.9%). Septa were most frequently located posterior to the ZMB (49.2%), while ZMB was mostly located in the first molar region (66.4%). Narrow LSAs may complicate the surgical approach to the posterior maxilla, especially when sinus elevation should be used in the second molar region. Considering the occasional presence of antral septa, membrane elevation may be complicated when a septum is encountered during the procedure. These results suggest that 3-dimensional examination of the convexity of the Mx sinus should be performed preoperatively to choose proper surgical techniques and minimize surgical complications.

The Shared Subjective Frames of Interdisciplinary Practitioners Involved in Function-Focused Care in a Nursing Home: Q-Methodology.

BACKGROUND: An interdisciplinary team-based approach in nursing homes has been suggested in the literature as a strategy for delaying functional decline in residents. Function-focused care is a philosophy-based approach in which interdisciplinary practitioners assess functional capacity and help older adults to optimize and maintain their remaining abilities. PURPOSE: This study explored and described the shared subjective frames of interdisciplinary practitioners as regards function-focused care for nursing home residents. METHODS: Q-methodology was used to analyze the subjectivity of each factor of function-focused care for nursing home residents. Data were collected from August to September 2016. Thirty-four Q-statements were selected and scored by the 30 interdisciplinary practitioners on a 9-point scale with a normal distribution. Data were analyzed using the PQ Method 2.33 program. RESULTS: The results revealed four factors of function-focused care, including (a) using a wait-and-see approach to encourage self-care, (b) maintaining interactive communications to identify and respond to changes, (c) reinforcing residents' inner and outer strengths for homeostasis, and (d) using a tailored approach based on comparisons between the past and the present. Shared subjectivity may provide an important collaborative framework to identify and solve complex problems related to the functional needs of nursing home residents. CONCLUSIONS: The results of this study elucidate the subjectivities of interdisciplinary practitioners and better enable their provision of effective care in support of the remaining functional abilities of older adults living in nursing homes. The findings may be used as a reference to establish communication methods and shared documentation for interdisciplinary practitioners in nursing homes and construct interdisciplinary function-focused care practice guidelines.