Highly biomimetic spiking neuron using SiGe heterojunction bipolar transistors for energy-efficient neuromorphic systems.

We demonstrate a highly biomimetic spiking neuron capable of fast and energy-efficient neuronal oscillation dynamics. Our simple neuron circuit is constructed using silicon-germanium heterojunction based bipolar transistors (HBTs) with nanowire structure. The HBT has a hysteresis window with steep switching characteristics and high current margin in the low voltage range, which enables a high spiking frequency (~ 245 kHz) with low energy consumption (≤ 1.37 pJ/spike). Also, gated structure achieves a stable balance in the activity of the neural system by incorporating both excitatory and inhibitory signal. Furthermore, inhibition of multiple strengths can be realized by adjusting the integration time according to the amplitude of the inhibitory signal. In addition, the spiking frequency can be tuned by mutually controlling the hysteresis window in the HBTs. These results ensure the sparse activity and homeostasis of neural networks.

Enhanced near-infrared photodetection via whispering gallery modes in the wave-shaped sidewall silicon nanopillar arrays.

We demonstrate a near-infrared (NIR) photodiode (PD) by using a wave-shaped sidewall silicon nanopillars (WS-SiNPs) structure. The designed WS sidewall nanostructure increases the horizontal component of incident light and induces multiple whispering-gallery modes with low-quality factor, which increases the light absorption path. Thus, the WS-SiNP PD shows improved spectral responsivity and external quantum efficiency over straight sidewall silicon nanopillars and planar PDs in the NIR region. Especially, the peak responsivity of 0.648 A/W is achieved at a wavelength of 905 nm, which is used for light detection and ranging. Comparison with commercial photodiodes demonstrates the good optoelectrical characteristics of the fabricated device. The improved characteristics are validated by 3D finite differential time domain simulations. Based on these results, our device shows the potential for cost-effective Si-based optoelectronic devices to be utilized in future advanced applications.

Highly Reliable Memory Operation of High-Density Three-Terminal Thyristor Random Access Memory.

Three-terminal (3-T) thyristor random-access memory is explored for a next-generation high-density nanoscale vertical cross-point array. The effects of standby voltages on the device are thoroughly investigated in terms of gate-cathode voltage (VGC,ST) and anode-cathode voltage (VAC,ST) in the standby state for superior data retention characteristics and low-power operation. The device with the optimized VGC,ST of - 0.4 V and VAC,ST of 0.6 V shows the continuous data retention capability without refresh operation with a low standby current of 1.14 pA. In addition, a memory array operation scheme of 3-T TRAM is proposed to address array disturbance issues. The presented array operation scheme can efficiently minimize program, erase and read disturbances on unselected cells by adjusting gate-cathode voltage. The standby voltage turns out to be beneficial to improve retention characteristics: over 10 s. With the proposed memory array operation, 3-T TRAM can provide excellent data retention characteristics and high-density memory configurations comparable with or surpass conventional dynamic random-access memory (DRAM) technology.