Ionizing terahertz waves with 260 MV/cm from scalable optical rectification.

Terahertz (THz) waves, known as non-ionizing radiation owing to their low photon energies, can actually ionize atoms and molecules when a sufficiently large number of THz photons are concentrated in time and space. Here, we demonstrate the generation of ionizing, multicycle, 15-THz waves emitted from large-area lithium niobate crystals via phase-matched optical rectification of 150-terawatt laser pulses. A complete characterization of the generated THz waves in energy, pulse duration, and focal spot size shows that the field strength can reach up to 260 megavolts per centimeter. In particular, a single-shot THz interferometer is employed to measure the THz pulse duration and spectrum with complementary numerical simulations. Such intense THz pulses are irradiated onto various solid targets to demonstrate THz-induced tunneling ionization and plasma formation. This study also discusses the potential of nonperturbative THz-driven ionization in gases, which will open up new opportunities, including nonlinear and relativistic THz physics in plasma.

Terahertz Optical Properties and Carrier Behaviors of Graphene Oxide Quantum Dot and Reduced Graphene Oxide Quantum Dot via Terahertz Time-Domain Spectroscopy.

Graphene quantum dots (GQDs) with a band gap have been widely applied in many fields owing to their unique optical properties. To better utilize the optical advantages of GQDs, it is important to understand their optical characteristics. Our study demonstrates the optical properties and carrier behaviors of synthesized graphene oxide quantum dot (GOQD) and reduced graphene oxide quantum dot (rGOQD) pellets via Terahertz time-domain spectroscopy (THz-TDS). The complex permittivity and optical conductivity are obtained in the terahertz region, indicating that the optical conductivity of the GOQD is higher than that of the rGOQD. Although rGOQD has a higher carrier density, approximately 1.5-times than that of GOQD, the lower charge carrier mobility of the rGOQD, which is obtained using Drude-Lorentz oscillator model fitting contributes to a decrease in optical conductivity. This lower mobility can be attributed to the more significant number of defect states within the rGOQD compared to GOQD. To the best of our knowledge, our study initially demonstrates the optical property and carrier behaviors of GOQD and rGOQD in the THz region. Moreover, this study provides important information on factors influencing carrier behavior to various fields in which carrier behavior plays an important role.

Multi-millijoule terahertz emission from laser-wakefield-accelerated electrons.

High-power terahertz radiation was observed to be emitted from a gas jet irradiated by 100-terawatt-class laser pulses in the laser-wakefield acceleration of electrons. The emitted terahertz radiation was characterized in terms of its spectrum, polarization, and energy dependence on the accompanying electron bunch energy and charge under various gas target conditions. With a nitrogen target, more than 4 mJ of energy was produced at <10 THz with a laser-to-terahertz conversion efficiency of ~0.15%. Such strong terahertz radiation is hypothesized to be produced from plasma electrons accelerated by the ponderomotive force of the laser and the plasma wakefields on the time scale of the laser pulse duration and plasma period. This model is examined with analytic calculations and particle-in-cell simulations to better understand the generation mechanism of high-energy terahertz radiation in laser-wakefield acceleration.

Topological Surface-Dominated Spintronic THz Emission in Topologically Nontrivial Bi1- x Sbx Films.

Topological materials have significant potential for spintronic applications owing to their superior spin-charge interconversion. Here, the spin-to-charge conversion (SCC) characteristics of epitaxial Bi1- x Sbx films is investigated across the topological phase transition by spintronic terahertz (THz) spectroscopy. An unexpected, intense spintronic THz emission is observed in the topologically nontrivial semimetal Bi1- x Sbx films, significantly greater than that of Pt and Bi2 Se3 , which indicates the potential of Bi1- x Sbx for spintronic applications. More importantly, the topological surface state (TSS) is observed to significantly contribute to SCC, despite the coexistence of the bulk state, which is possible via a unique ultrafast SCC process, considering the decay process of the spin-polarized hot electrons. This means that topological material-based spintronic devices should be fabricated in a manner that fully utilizes the TSS, not the bulk state, to maximize their performance. The results not only provide a clue for identifying the source of the giant spin Hall angle of Bi1- x Sbx , but also expand the application potential of topological materials by indicating that the optically induced spin current provides a unique method for focused-spin injection into the TSS.

Transient Carrier Cooling Enhanced by Grain Boundaries in Graphene Monolayer.

Using a high terahertz (THz) electric field (ETHz), the carrier scattering in graphene was studied with an electric field of up to 282 kV/cm. When the grain size of graphene monolayers varies from small (5 µm) and medium (70 µm) to large grains (500 µm), the dominant carrier scattering source in large- and small-grained graphene differs at high THz field, i.e., there is optical phonon scattering for large grains and defect scattering for small grains. Although the electron-optical phonon coupling strength is the same for all grain sizes in our study, the enhanced optical phonon scattering in the high THz field from the large-grained graphene is caused by a higher optical phonon temperature, originating from the slow relaxation of accelerated electrons. Unlike the large-grained graphene, lower electron and optical phonon temperatures are found in the small-grained graphene monolayer, resulting from the effective carrier cooling through the defects, called supercollisions. Our results indicate that the carrier mobility in the high-crystalline graphene is easily vulnerable to scattering by the optical phonons. Thus, controlling the population of defect sites, as a means for carrier cooling, can enhance the carrier mobility at high electric fields in graphene electronics by suppressing the heating of optical phonons.

Terahertz dynamic imaging of skin drug absorption.

Terahertz (THz) imaging is a nondestructive, label-free, rapid imaging technique which gives the possibility of a real-time tracing of drugs within the skin. We evaluated the feasibility of THz dynamic imaging for visualizing serial changes in the distribution and penetration of a topical agent, dimethyl sulfoxide (DMSO) containing ketoprofen, using excised mouse skins. THz imaging was performed for 6 h after drug application to the skin and was compared with the results obtained using the Franz cell diffusion test, a standard in vitro skin absorption test. THz dynamic reflection imaging showed that the reflection signals decreased rapidly during the early time period, and remained constant through the late time period. The area of drug permeation within the skin layer on THz imaging increased with time. The dynamic pattern of THz reflection signal decrease was similar to that of DMSO absorption analyzed by the Franz cell diffusion test, which indicates that THz imaging mainly reflects the DMSO component. This study demonstrates that THz imaging technique can be used for imaging the spatial distribution and penetration of drug-applied sites.