Effect of Residual Oxygen Concentration on the Lattice Parameters of Aluminum Nitride Powder Prepared via Carbothermal Reduction Nitridation Reaction.

Residual oxygen in wurtzite-type aluminum nitride (AlN) crystal, which significantly affects phonon transport and crystal growth, is crucial to thermal conductivity and the crystal quality of AlN ceramics. In this study, the effect of residual oxygen on the lattice of AlN was examined for as-synthesized and sintered samples. By controlling reaction time in the carbothermal reduction nitridation (CRN) procedure, AlN powder was successfully synthesized, and the amount of residual oxygen was systematically controlled. The evolution of lattice parameters of AlN with respect to oxygen conc. was carefully investigated via X-ray diffraction analysis. With increasing amounts of residual oxygen in the as-synthesized AlN, lattice expansion in the ab plane was induced without a significant change in the c-axis lattice parameter. The lattice expansion in the ab plane owing to the residual oxygen was also confirmed with high-resolution transmission electron microscopy, in contrast to the invariant lattice parameter of the sintered AlN phase. Micro-strain values from XRD peak broadening confirm that stress, induced by residual oxygen, expands the AlN lattice. In this work, the lattice expansion of AlN with increasing residual oxygen was elucidated via X-ray diffraction and HR-TEM, which is useful to estimate and control the lattice oxygen in AlN ceramics.

Direct Evidence on Effect of Oxygen Dissolution on Thermal and Electrical Conductivity of AlN Ceramics Using Al Solid-State NMR Analysis.

Aluminum nitride, with its high thermal conductivity and insulating properties, is a promising candidate as a thermal dissipation material in optoelectronics and high-power logic devices. In this work, we have shown that the thermal conductivity and electrical resistivity of AlN ceramics are primarily governed by ionic defects created by oxygen dissolved in AlN grains, which are directly probed using 27Al NMR spectroscopy. We find that a 4-coordinated AlN3O defect (ON) in the AlN lattice is changed to intermediate AlNO3, and further to 6-coordinated AlO6 with decreasing oxygen concentration. As the aluminum vacancy (VAl) defect, which is detrimental to thermal conductivity, is removed, the overall thermal conductivity is improved from 120 to 160 W/mK because of the relatively minor effect of the AlO6 defect on thermal conductivity. With the same total oxygen content, as the AlN3O defect concentration decreases, thermal conductivity increases. The electrical resistivity of our AlN ceramics also increases with the removal of oxygen because the major ionic carrier is VAl. Our results show that to enhance the thermal conductivity and electrical resistivity of AlN ceramics, the dissolved oxygen in AlN grains should be removed first. This understanding of the local structure of Al-related defects enables us to design new thermal dissipation materials.

Unique design of superior metal-organic framework for removal of toxic chemicals in humid environment via direct functionalization of the metal nodes.

Unique chemical and thermal stabilities of a zirconium-based metal-organic framework (MOF) and its functionalized analogues play a key role to efficiently remove chemical warfare agents (ex., cyanogen chloride, CNCl) and simulant (dimethyl methylphosphonate, DMMP) as well as industrial toxic gas, ammonia (NH3). Herein, we for the first time demonstrate outstanding performance of MOF-808 for removal of toxic chemicals in humid environment via special design of functionalization of hydroxo species bridging Zr-nodes using a triethylenediamine (TEDA) to form ionic frameworks by gas phase acid-base reactions. In situ experimental analyses and first-principles density functional theory calculations unveil underlying mechanism on the selective deposition of TEDA on the Zr-bridging hydroxo sites (µ3-OH) in Zr-MOFs. The crystal structure of TEDA-grafted MOF-808 was confirmed using synchrotron X-ray powder diffraction (SXRPD). Furthermore, operando FT-IR spectra elucidate why the TEDA-grafted MOF-808 shows by far superior sorption efficiency to other MOF varieties. This work provides design principles and applications how to optimize MOFs for the preparation for versatile adsorbents using diamine grafting chemistry, which is also potentially applicable to various catalysis.

Highly Luminous Ba2SiO4-δN2/3δ:Eu2+ Phosphor for NUV-LEDs: Origin of PL-Enhancement by N3--Substitution.

Ba2SiO4-δN2/3δ:Eu2+ (BSON:Eu2+) materials with different N3- contents were successfully prepared and characterized. Rietveld refinements showed that N3- ions were partially substituted for the O2- ions in the SiO4-tetrahedra because the bond lengths of Si‒(O,N) (average value = 1.689 Å) were slightly elongated compared with those of Si‒O (average value = 1.659 Å), which resulted in the minute compression of the Ba(2)‒O bond lengths from 2.832 to 2.810 Å. The average N3- contents of BSON:Eu2+ phosphors were determined from 100 nm to 2000 nm depth of grain using a secondary ion mass spectrometry (SIMS): 0.064 (synthesized using 100% α-Si3N4), 0.035 (using 50% α-Si3N4 and 50% SiO2), and 0.000 (using 100% SiO2). Infrared (IR) and X-ray photoelectron spectroscopy (XPS) measurements corroborated the Rietveld refinements: the new IR mode at 850 cm-1 (Si‒N stretching vibration) and the binding energy at 98.6 eV (Si-2p) due to the N3- substitution. Furthermore, in UV-region, the absorbance of N3--substituted BSON:Eu2+ (synthesized using 100% α-Si3N4) phosphor was about two times higher than that of BSO:Eu2+ (using 100% SiO2). Owing to the N3- substitution, surprisingly, the photoluminescence (PL) and LED-PL intensity of BSON:Eu2+ (synthesized using 100% α-Si3N4) was about 5.0 times as high as that of BSO:Eu2+ (using 100% SiO2). The compressive strain estimated by the Williamson-Hall (W-H) method, was slightly increased with the higher N3- content in the host-lattice of Ba2SiO4, which warranted that the N3- ion plays an important role in the highly enhanced PL intensity of BSON:Eu2+ phosphor. These phosphor materials could be a bridgehead for developing new phosphors and application in white NUV-LEDs field.

Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite.

Correction for 'Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite' by Ja-Young Seo, et al., Nanoscale, 2017, DOI: 10.1039/c7nr05582j.

Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite.

Recently, organic-inorganic halide perovskite (OHP) has been suggested as an alternative to oxides or chalcogenides in resistive switching memory devices due to low operating voltage, high ON/OFF ratio, and flexibility. The most studied OHP is 3-dimensional (3D) MAPbI3. However, MAPbI3 often exhibits less reliable switching behavior probably due to the uncontrollable random formation of conducting filaments. Here, we report the resistive switching property of 2-dimensional (2D) OHP and compare switching characteristics depending on structural dimensionality. The dimensionality is controlled by changing the composition of BA2MAn-1PbnI3n+1 (BA = butylammonium, MA = methylammonium), where 2D is formed from n = 1, and 3D is formed from n = ∞. Quasi 2D compositions with n = 2 and 3 are also compared. Transition from a high resistance state (HRS) to a low resistance state (LRS) occurs at 0.25 × 106 V m-1 for 2D BA2PbI4 film, which is lower than those for quasi 2D and 3D. Upon reducing the dimensionality from 3D to 2D, the ON/OFF ratio significantly increases from 102 to 107, which is mainly due to the decreased HRS current. A higher Schottky barrier and thermal activation energy are responsible for the low HRS current. We demonstrate for the first time reliable resistive switching from 4 inch wafer-scale BA2PbI4 thin film working at both room temperature and a high temperature of 87 °C, which strongly suggests that 2D OHP is a promising candidate for resistive switching memory.

Luminescent properties of rare earth fully activated apatites, LiRE9(SiO4)6O2 (RE = Ce, Eu, and Tb): site selective crystal field effect.

Novel LiCe9(SiO4)6O2 and LiTb9(SiO4)6O2 compounds have been successfully synthesized, and the site selectivity and occupancy of activator ions have been estimated including LiEu9(SiO4)6O2 compound. The rare earth (RE) fully occupied compounds, as well as the RE partially occupied congeners are required for the assessment of site selectivity of RE (activator) ions in apatite-type compounds. The splitting energies of the 6H and 4F Wycoff positions of LiRE9(SiO4)6O2 (RE = Ce, Eu, and Tb) compounds are calculated based on crystal field theory: ΔECe(6H) = 3849.3 cm(-1), ΔECe(4F) = 4228.1 cm(-1), ΔEEu(6H) = 3870.0 cm(-1), ΔEEu(4F) = 4092.8 cm(-1), ΔETb(6H) = 3637.6 cm(-1), ΔETb(4F) = 4396.1 cm(-1), indicating that the splitting energy for the 4F site is larger than that for the 6H site in all compounds; thus the absorption energy is higher for the 6H site. In apatite-type LiRE9(SiO4)6O2 (RE = Ce, Eu, and Tb) compounds, the Ce(3+) ions predominantly occupy the 4F site associated with the absorption band around 300 nm at lower Ce(3+) concentration, and then enter the 6H site associated the absorption band around 245 nm. For the Eu(3+)-doped compounds, the 4F site and 6H site are mixed within the charge transfer band (CTB) between 220 and 350 nm. Eu(3+) ions initially preferentially occupy the 6H site (around 290 nm) at lower Eu(3+) concentration and subsequently enter the 4F site (around 320 nm) with increasing Eu(3+) concentration. For the Tb(3+)-doped compounds, the absorption due to the two different sites is mixed within f-d absorption band between 200 and 300 nm. At lower Tb(3+) concentration, the Tb(3+) ions enter favorably 6H site around 240 nm and then enter 4F site around 270 nm. These compounds may provide a platform for modeling a new phosphor and application in the solid-state lighting field.