Wavefront-corrected post-compression of a 100-TW Ti:sapphire laser.

We analyzed and corrected the wavefront distortion induced during the post-compression of a 100-TW Ti:Sapphire laser and achieved the intensity enhancement. In the post-compression, the spectral broadening of the laser was obtained by propagating through three 0.5 mm-thick fused silica plates and the laser pulse duration was post-compressed from 24 fs to 11 fs using a set of chirped mirrors. We measured the wavefront aberrations due to the intensity-dependent nonlinear process during the post-compression of femtosecond high-power laser pulses. By compensating for the wavefront aberrations with an adaptive optics system, the Strehl ratio of the post-compressed beam was improved from 0.37 to 0.52 and the focused intensity of the post-compressed beam could be enhanced by a factor of 1.5, while the enhancement without the wavefront correction was only a factor of 1.1 in spite of the peak-power enhancement by a factor of 1.8.

Sub-10 fs pulse generation by post-compression for peak-power enhancement of a 100-TW Ti:Sapphire laser.

We demonstrated sub-10 fs pulse generation by the post-compression of a 100 TW Ti:Sapphire laser to enhance the peak-power. In the post-compression, the laser spectrum was widely broadened by self-phase modulation in thin fused silica plate(s), and the induced spectral phase was compensated with a set of chirped mirrors. A spatial filter stage, consisting of two cylindrical lenses and a spherical lens, was employed to reduce the intensity modulation existing in the laser beam, which effectively suppressed intensity spikes induced by self-focusing. The laser beam was post-compressed from 23 fs to 9.7 fs after propagating through a 1.5 mm fused silica plate, resulting in the peak-power enhancement by a factor of 2.1.

Single-shot spatiotemporal characterization of a multi-PW laser using a multispectral wavefront sensing method.

The single-shot spatiotemporal characterization of an ultrahigh intensity laser pulse was performed using a multispectral wavefront sensor. For the measurement of the spatio-spectral electric field, a femtosecond laser pulse was spectrally modulated and separated by a Fabry-Perot etalon coupled with a grating pair, and its spatio-spectral electric field was measured with a wavefront sensor. The spatiotemporal electric field was reconstructed from the measured spatio-spectral electric field of a multi-PW laser pulse. We found that the spatiotemporal distortion could reduce the focused laser intensity by 15%, compared to the case of a diffraction-limited and transform-limited laser pulse.

Analysis of angular dispersion induced by wavefront rotation in nanosecond optical parametric chirped pulse amplification.

Angular dispersion observed in a nanosecond optical parametric chirped-pulse amplification (ns-OPCPA) amplifier adopted in the frontend of a multi-PW laser was analyzed. The theory on the angular dispersion, extended by including the wavefront rotation and the pulse front tilt of a strongly chirped laser pulse, revealed that the wavefront rotation is a major contributor to the angular dispersion, as compared to the pulse front tilt, in a ns-OPCPA amplifier. It was also shown that the wavefront rotation could be introduced by the phase mismatch and the noncollinear propagation angle in the noncollinear ns-OPCPA amplifier. The theoretical prediction was experimentally verified by measuring the angular dispersion of the ns-OPCPA frontend installed in the 20-fs, 4-PW Ti:Sapphire laser. We emphasize the importance of the proper characterization and control of the angular dispersion in the ns-OPCPA amplifier since the focus intensity of an ultrahigh power laser could be significantly reduced due to the spatiotemporal effect even for small induced angular dispersion.

Spectral shaping of an OPCPA preamplifier for a sub-20-fs multi-PW laser.

We developed an OPCPA preamplifier with an actively shaped output spectrum to obtain a sub-20-fs-duration pulse for a 4-PW laser. The active spectral shaping was facilitated by controlling the temporal profile of a pump pulse in the OPCPA preamplifier. By optimizing the output spectrum of the OPCPA to compensate for the gain-depletion effect in the 4-PW laser, a final laser pulse with a broad spectrum of 101-nm in width (FWHM), resulting in a short pulse duration of 17 fs, was achieved.

Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors.

We fabricated wire-type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) using a self-formed cracked template based on a lift-off process. The electrical characteristics of wire-type IGZO TFTs could be controlled by changing the width and density of IGZO wires through varying the coating conditions of template solution or multi-stacking additional layers. The fabricated wire-type devices were applied to sensors after functionalizing the surface. The wire-type pH sensor showed a sensitivity of 45.4 mV/pH, and this value was an improved sensitivity compared with that of the film-type device (27.6 mV/pH). Similarly, when the wire-type device was used as a glucose sensor, it showed more variation in electrical characteristics than the film-type device. The improved sensing properties resulted from the large surface area of the wire-type device compared with that of the film-type device. In addition, we fabricated wire-type IGZO TFTs on flexible substrates and confirmed that such structures were very resistant to mechanical stresses at a bending radius of 10 mm.

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

We report low-temperature solution processing of hafnium oxide (HfO2) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl4) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO2 film. The fabricated HfO2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

The self-activated radical doping effects on the catalyzed surface of amorphous metal oxide films.

In this study, we propose a self-activated radical doping (SRD) method on the catalyzed surface of amorphous oxide film that can improve both the electrical characteristics and the stability of amorphous oxide films through oxidizing oxygen vacancy using hydroxyl radical which is a strong oxidizer. This SRD method, which uses UV irradiation and thermal hydrogen peroxide solution treatment, effectively decreased the amount of oxygen vacancies and facilitated self-passivation and doping effect by radical reaction with photo-activated oxygen defects. As a result, the SRD-treated amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) showed superior electrical performances compared with non-treated a-IGZO TFTs. The mobility increased from 9.1 to 17.5 cm2/Vs, on-off ratio increased from 8.9 × 107 to 7.96 × 109, and the threshold voltage shift of negative bias-illumination stress for 3600 secs under 5700 lux of white LED and negative bias-temperature stress at 50 °C decreased from 9.6 V to 4.6 V and from 2.4 V to 0.4 V, respectively.

Structural Engineering of Metal-Mesh Structure Applicable for Transparent Electrodes Fabricated by Self-Formable Cracked Template.

Flexible and transparent conducting electrodes are essential for future electronic devices. In this study, we successfully fabricated a highly-interconnected metal-mesh structure (MMS) using a self-formable cracked template. The template-fabricated from colloidal silica-can be easily formed and removed, presenting a simple and cost-effective way to construct a randomly and uniformly networked MMS. The structure of the MMS can be controlled by varying the spin-coating speed during the coating of the template solution or by stacking of metal-mesh layers. Through these techniques, the optical transparency and sheet resistance of the MMS can be designed for a specific purpose. A double-layered Al MMS showed high optical transparency (~80%) in the visible region, low sheet resistance (~20 Ω/sq), and good flexibility under bending test compared with a single-layered MMS, because of its highly-interconnected wire structure. Additionally, we identified the applicability of the MMS in the case of practical devices by applying it to electrodes of thin-film transistors (TFTs). The TFTs with MMS electrodes showed comparable electrical characteristics to those with conventional film-type electrodes. The cracked template can be used for the fabrication of a mesh structure consisting of any material, so it can be used for not only transparent electrodes, but also various applications such as solar cells, sensors, etc.

Simple method to enhance positive bias stress stability of In-Ga-Zn-O thin-film transistors using a vertically graded oxygen-vacancy active layer.

We proposed a simple method to deposit a vertically graded oxygen-vacancy active layer (VGA) to enhance the positive bias stress (PBS) stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). We deposited a-IGZO films by sputtering (target composition; In2O3:Ga2O3:ZnO = 1:1:1 mol %), and the oxygen partial pressure was varied during deposition so that the front channel of the TFTs was fabricated with low oxygen partial pressure and the back channel with high oxygen partial pressure. Using this method, we were able to control the oxygen vacancy concentration of the active layer so that it varied with depth. As a result, the turn-on voltage shift following a 10 000 s PBS of optimized VGA TFT was drastically improved from 12.0 to 5.6 V compared with a conventional a-IGZO TFT, without a significant decrease in the field effect mobility. These results came from the self-passivation effect and decrease in oxygen-vacancy-related trap sites of the VGA TFTs.

QTL mapping and development of candidate gene-derived DNA markers associated with seedling cold tolerance in rice (Oryza sativa L.).

Cold stress at the seedling stage is a major threat to rice production. Cold tolerance is controlled by complex genetic factors. We used an F7 recombinant inbred line (RIL) population of 123 individuals derived from a cross of the cold-tolerant japonica cultivar Jinbu and the cold-susceptible indica cultivar BR29 for QTL mapping. Phenotypic evaluation of the parents and RILs in an 18/8 °C (day/night) cold stress regime revealed continuous variation for cold tolerance. Six QTLs including two on chromosome 1 and one each on chromosomes 2, 4, 10, and 11 for seedling cold tolerance were identified with phenotypic variation (R(2)) ranging from 6.1 to 16.5 %. The QTL combinations (qSCT1 and qSCT11) were detected in all stable cold-tolerant RIL groups, which explained the critical threshold of 27.1 % for the R(2) value determining cold tolerance at the seedling stage. Two QTLs (qSCT1 and qSCT11) on chromosomes 1 and 11, respectively, were fine mapped. The markers In1-c3, derived from the open reading frame (ORF) LOC_Os01g69910 encoding calmodulin-binding transcription activator (CAMTA), and In11-d1, derived from ORF LOC_Os11g37720 (Duf6 gene), co-segregated with seedling cold tolerance. The result may provide useful information on seedling cold tolerance mechanism and provide DNA markers for a marker-assisted breeding program to improve seedling cold tolerance in indica rice varieties.

Approaches to label-free flexible DNA biosensors using low-temperature solution-processed InZnO thin-film transistors.

Low-temperature solution-processed In-Zn-O (IZO) thin-film transistors (TFTs) exhibiting a favorable microenvironment for electron transfer by adsorbed artificial deoxyribonucleic acid (DNA) have extraordinary potential for emerging flexible biosensor applications. Superb sensing ability to differentiate even 0.5 µL of 50 nM DNA target solution was achieved through using IZO TFTs fabricated at 280 °C. Our IZO TFT had a turn-on voltage (V(on)) of -0.8 V, on/off ratio of 6.94 × 10(5), and on-current (I(on)) value of 2.32 × 10(-6)A in pristine condition. A dry-wet method was applied to immobilize two dimensional double crossover tile based DNA nanostructures on the IZO surface, after which we observed a negative shift of the transfer curve accompanied by a significant increase in the Ion and degradation of the Von and on/off ratio. As the concentration of DNA target solution increased, variances in these parameters became increasingly apparent. The sensing mechanism based on the current evolution was attributed to the oxidation of DNA, in which the guanine nucleobase plays a key role. The sensing behavior obtained from flexible biosensors on a polymeric substrate fabricated under the identical conditions was exactly analogous. These results compare favorably with the conventional field-effect transistor based DNA sensors by demonstrating remarkable sensitivity and feasibility of flexible devices that arose from a different sensing mechanism and a low-temperature process, respectively.