Printing Formation of Flexible (001)-Oriented PZT Films on Plastic Substrates.

High-quality, uniaxially oriented, and flexible PbZr0.52Ti0.48O3 (PZT) films were fabricated on flexible RbLaNb2O7/BaTiO3 (RLNO/BTO)-coated polyimide (PI) substrates. All layers were fabricated by a photo-assisted chemical solution deposition (PCSD) process using KrF laser irradiation for photocrystallization of the printed precursors. The Dion-Jacobson perovskite RLNO thin films on flexible PI sheets were employed as seed layers for the uniaxially oriented growth of PZT films. To obtain the uniaxially oriented RLNO seed layer, a BTO nanoparticle-dispersion interlayer was fabricated to avoid PI substrate surface damage under excess photothermal heating, and the RLNO has been orientedly grown only at around 40 mJ·cm-2 at 300 °C. The prepared RLNO seed layer on the BTO/PI substrate showed very high (010)-oriented growth with a very high Lotgering factor (F(010) = 1.0). By using the flexible (010)-oriented RLNO film on BTO/PI, PZT film crystal growth was possible via KrF laser irradiation of a sol-gel-derived precursor film at 50 mJ·cm-2 at 300 °C. The obtained PZT film showed highly (001)-oriented growth on the flexible plastic substrates with F(001) = 0.92 without any micro-cracks. The RLNO was only uniaxial-oriented grown at the top part of the RLNO amorphous precursor layer. The oriented grown and amorphous phases of RLNO would have two important roles for this multilayered film formation: (1) triggering orientation growth of the PZT film at the top and (2) the stress relaxation of the underneath BTO layer to suppress the micro-crack formation. This is the first time that PZT films have been crystallized directly on flexible substrates. The combined processes of photocrystallization and chemical solution deposition are a cost-effective and highly on-demand process for the fabrication of flexible devices.

Uncovering ferroelectric polarization in tetragonal (Bi1/2K1/2)TiO3-(Bi1/2Na1/2)TiO3 single crystals.

We report the robust ferroelectric properties of (1 - x)(Bi1/2Na1/2)TiO3-x(Bi1/2K1/2)TiO3 (x = 33%) single crystals grown by a top-seeded solution growth process under a high oxygen-pressure (0.9 MPa) atmosphere. The sample exhibit a large remanent polarization of 48 µC/cm2 and a sizeable piezoelectric strain constant of 460 pm/V. Neutron powder diffraction structural analysis combined with first-principles calculations reveals that the large ferroelectric polarization comparable to PbTiO3 stems from the hybridization between Bi-6p and O-2p orbitals at a moderately negative chemical pressure.

Ferrielectric-mediated morphotropic phase boundaries in Bi-based polar perovskites.

Spontaneous polarization (Ps) in ferroelectrics has provided the impetus to develop piezoelectric devices such as sensors, actuators and diagnostic imaging transducers. Widely used lead-based perovskites exhibit a composition-driven phase diagram involving a transition region, known as a morphotropic phase boundary, where the ferroelectric structure changes dramatically and the piezoelectric activity is maximal. In some perovskites, ferroic polarization coexists with nonpolar rotations of octahedra, suggesting an unprecedented phase diagram. Here, we show morphotropic phase boundaries, where 'ferrielectric' appears as a bridging phase between ferroelectrics with rhombohedral and tetragonal symmetries in Bi1/2Na1/2TiO3-based perovskites. Neutron diffraction analysis demonstrates that the intermediate ferrielectric displays a small Ps resulting from up and down polarizations coupled with an in-phase TiO6 rotation. Our ab initio calculations indicate that a staggered Bi-O conformation at an appropriate chemical pressure delivers the ferrielectric-mediated phase boundaries, which provides a promising platform for (multi)ferroic materials with enhanced physical properties.

Ferroelectrics with a controlled oxygen-vacancy distribution by design.

Controlling and manipulating defects in materials provides an extra degree of freedom not only for enhancing physical properties but also for introducing additional functionalities. In ferroelectric oxides, an accumulation of point defects at specific boundaries often deteriorates a polarization-switching capability, but on the one hand, delivers interface-driven phenomena. At present, it remains challenging to control oxygen vacancies at will to achieve a desirable defect structure. Here, we report a practical route to designing oxygen-vacancy distributions by exploiting the interaction with transition-metal dopants. Our thin-film experiments combined with ab-initio theoretical calculations for BiFeO3 demonstrate that isovalent dopants such as Mn3+ with a partly or fully electron-occupied eg state can trap oxygen vacancies, leading to a robust polarization switching. Our approach to controlling oxygen vacancy distributions by harnessing the vacancy-trapping capability of isovalent transition-metal cations will realize the full potential of switchable polarization in ferroelectric perovskite oxides.

Polarization twist in perovskite ferrielectrics.

Because the functions of polar materials are governed primarily by their polarization response to external stimuli, the majority of studies have focused on controlling polar lattice distortions. In some perovskite oxides, polar distortions coexist with nonpolar tilts and rotations of oxygen octahedra. The interplay between nonpolar and polar instabilities appears to play a crucial role, raising the question of how to design materials by exploiting their coupling. Here, we introduce the concept of 'polarization twist', which offers enhanced control over piezoelectric responses in polar materials. Our experimental and theoretical studies provide direct evidence that a ferrielectric perovskite exhibits a large piezoelectric response because of extended polar distortion, accompanied by nonpolar octahedral rotations, as if twisted polarization relaxes under electric fields. The concept underlying the polarization twist opens new possibilities for developing alternative materials in bulk and thin-film forms.

Giant photovoltaic effect of ferroelectric domain walls in perovskite single crystals.

The photovoltaic (PV) effect in polar materials offers great potential for light-energy conversion that generates a voltage beyond the bandgap limit of present semiconductor-based solar cells. Ferroelectrics have received renewed attention because of the ability to deliver a high voltage in the presence of ferroelastic domain walls (DWs). In recent years, there has been considerable debate over the impact of the DWs on the PV effects, owing to lack of information on the bulk PV tensor of host ferroelectrics. In this article, we provide the first direct evidence of an unusually large PV response induced by ferroelastic DWs-termed 'DW'-PV effect. The precise estimation of the bulk PV tensor in single crystals of barium titanate enables us to quantify the giant PV effect driven by 90° DWs. We show that the DW-PV effect arises from an effective electric field consisting of a potential step and a local PV component in the 90° DW region. This work offers a starting point for further investigation into the DW-PV effect of alternative systems and opens a reliable route for enhancing the PV properties in ferroelectrics based on the engineering of domain structures in either bulk or thin-film form.

Defect control for polarization switching in BiFeO3 single crystals.

BiFeO3 (BFO) single crystals were grown and the effects of Zn and Mn co-doping on the polarization and leakage current properties were investigated at 25 °C for establishing materials design based on defect chemistry. Although Zn doping or Mn doping led to a deterioration in the properties, Zn-Mn co-doping led to a large remanent polarization (36 µC/ cm²), a low coercive field (19 kV/cm), and a relatively low leakage current density (~10⁻8 A/cm²). It is proposed that defect dipoles composed of Zn²+ and Mn4+ act as effective nucleation sites for ferroelectric domains during polarization switching in BFO crystals.