Dual-axis 360° rotation specimen holder for analysis of three-dimensional magnetic structures.

A dual-axis 360° rotation specimen holder was developed for use in reconstructing the three-dimensional (3D) distribution of a magnetic field using a combination of electron holography and tomography. Pillar-shaped specimens are used to obtain accurate reconstruction without a missing angle. The holder's rotation rod can be turned >360°; the pillar is set ±45° to the azimuth for both x- and y-axis rotation. Two rotation series of holograms in individual axes are recorded for vector field tomography. The two vector components of the magnetic field are reconstructed directly from the two series of holograms, and the remaining component is calculated using Maxwell's equation, div B = 0. As a result, all 3D magnetic fields are reconstructed.

A new FIB fabrication method for micropillar specimens for three-dimensional observation using scanning transmission electron microscopy.

A new method to prepare micropillar specimens with a high aspect ratio that is suitable for three-dimensional scanning transmission electron microscopy (3D-STEM) was developed. The key features of the micropillar fabrication are: first, microsampling to extract a small piece including the structure of interest in an IC chip, and second, an ion-beam with an incident direction of 60 degrees to the pillar's axis that enables the parallel sidewalls of the pillar to be produced with a high aspect ratio. A memory-cell structure (length: 6 microm; width: 300 x 500 nm) was fabricated in the micropillar and observed from various directions with a 3D-STEM. A planiform capacitor covered with granular surfaces and a solid crossing gate and metal lines was successfully observed threedimensionally at a resolution of approximately 5 nm.

A specimen-drift-free EDX mapping system in a STEM for observing two-dimensional profiles of low dose elements in fine semiconductor devices.

We developed a specimen-drift-free energy-dispersive X-ray (EDX) mapping system in a scanning transmission electron microscope (STEM) to improve the sensitivity and spatial resolution of EDX elemental mapping images. The amount of specimen drift was analysed from two STEM images before and after specimen drift by using the phase-correlation method, and was compensated for with an image-shift deflector of the STEM by the displacement of the scanning electron beam. We applied this system to observe the two-dimensional distribution of low dose arsenic in silicon semiconductor devices. The sensitivity of the elemental mapping was improved to several tenths atomic % for arsenic atoms while maintaining a spatial resolution of 2 nm.