RESUMO
We report on high-resolution transmission electron microscope structural studies of InAs colloidal semiconductor nanocrystal quantum dots (NCQDs) on ultrathin GaAs (001) semiconductor single-crystal substrates. We employ a benign method for preparing electron transparent specimens that is suitable for the study of such fragile samples. The image contrast comprises contributions from electron scattering from both the NCs and the GaAs substrate. Long-term electron exposure studies reveal different damage mechanisms operative in the nanocrystals and the substrate.
Assuntos
Arsenicais/química , Cristalização/métodos , Gálio/química , Índio/química , Microscopia Eletrônica de Transmissão/métodos , Nanoestruturas/ultraestrutura , Nanotecnologia/métodos , Pontos Quânticos , Semicondutores , Arsenicais/análise , Gálio/análise , Índio/análise , Teste de Materiais/métodos , Nanoestruturas/química , Tamanho da PartículaRESUMO
Integration of semiconductor epitaxical nanostructures and nanocrystals into two classes of quantum structures, uncovered adsorbed nanocrystals or buried via epitaxical overgrowth, is successfully demonstrated through structural and optical studies. The combination InGaAs/GaAs epitaxical structures and InAs nanocrystals is employed as a vehicle with the functional aim of exploiting the well developed optoelectronic communication technology based on the former with the biochemical and biomedical applications for which the latter are well suited.