RESUMO
We show how the growth mode of a thin metallic film on an insulating substrate can be predicted theoretically by combining thermodynamic considerations with ab initio calculations for ordered metal/insulator interfaces at low coverage. Our approach is illustrated by calculations for Ag film deposited on an MgO substrate. Ab initio calculations predict high mobility of adsorbed Ag atoms on MgO, even at low temperatures, which greatly aids their aggregation.
RESUMO
Our ab initio studies show that surface defects cause redistribution of the electron density which can increase substantially the binding energy of metal atoms to oxide surfaces. The results for electron (F(0)(s)) and hole (V(0)(s)) centers in the adhesion of Ag atoms (at 1:4 and 1:1 coverages) to a MgO(100) surface, combined with previous studies for charged defects, support earlier ideas of the mechanism of radiation-enhanced adhesion of nonreactive metals on oxide substrates. The results suggest that some optical control of adhesion energies is possible through charge transfer.
