RESUMO
We report the synthesis of highly crystallographically textured films of stoichiometric bismuth telluride (Bi(2)Te(3)) in the presence of a surfactant, sodium lignosulfonate (SL), that resulted in the improved alignment of films in the (110) plane and offered good control over the morphology and roughness of the electrodeposited films. SL concentrations in the range 60-80 mg dm(-3) at a deposition potential of -0.1 V vs SCE (saturated calomel electrode) were found to yield the most improved crystallinity and similar or superior thermoelectric properties compared with results reported in the literature.
RESUMO
High-quality films of bismuth antimony telluride were synthesized by electrodeposition from nitric acid electroplating baths. The influence of a surfactant, sodium ligninsulfonate, on the structure, morphology, stoichiometry, and homogeneity of the deposited films has been investigated. It was found that addition of this particular surfactant significantly improved the microstructural properties as well as homogeneity of the films with a significant improvement in the thermoelectric properties over those deposited in the absence of surfactant. A detailed microprobe analysis of the deposited films yielded a stoichiometric composition of Bi(0.35)Sb(1.33)Te(3) for the films electrodeposited in the absence of surfactant and a stoichiometry of Bi(0.32)Sb(1.33)Te(3) for films deposited in the presence of surfactant.
RESUMO
High density p-type Bi0.5Sb1.5Te3 nanowire arrays are produced by a combination of electrodeposition and ion-track lithography technology. Initially, the electrodeposition of p-type Bi0.5Sb1.5Te3 films is investigated to find out the optimal conditions for the deposition of nanowires. Polyimide-based Kapton foils are chosen as a polymer for ion track irradiation and nanotemplating Bi0.5Sb1.5Te3 nanowires. The obtained nanowires have average diameters of 80 nm and lengths of 20 microm, which are equivalent to the pore size and thickness of Kapton foils. The nanowires exhibit a preferential orientation along the {110} plane with a composition of 11.26 at.% Bi, 26.23 at.% Sb, and 62.51 at.% Te. Temperature dependence studies of the electrical resistance show the semiconducting nature of the nanowires with a negative temperature coefficient of resistance and band gap energy of 0.089+/-0.006 eV.