Optimum Choice of Randomly Oriented Carbon Nanotube Networks for UV-Assisted Gas Sensing Applications.

We investigated the noise and photoresponse characteristics of various optical transparencies of nanotube networks to identify an optimal randomly oriented network of carbon nanotube (CNT)-based devices for UV-assisted gas sensing applications. Our investigation reveals that all of the studied devices demonstrate negative photoconductivity upon exposure to UV light. Our studies confirm the effect of UV irradiation on the electrical properties of CNT networks and the increased photoresponse with decreasing UV light wavelength. We also extend our analysis to explore the low-frequency noise properties of different nanotube network transparencies. Our findings indicate that devices with higher nanotube network transparencies exhibit lower noise levels. We conduct additional measurements of noise and resistance in an ethanol and acetone gas environment, demonstrating the high sensitivity of higher-transparent (lower-density) nanotube networks. Overall, our results indicate that lower-density nanotube networks hold significant promise as a viable choice for UV-assisted gas sensing applications.

Synthesis, Characterisation, and Functionalisation of Charged Two-Dimensional MoS2.

The applications of exfoliated MoS2 are limited by its inert surface and poor interface. We have activated the surface of exfoliated 2H-MoS2 by reacting it with NaBH4 , forming an n-doped material as demonstrated by a negative zeta-potential value ζ=-25 mV and a 20 nm (0.05 eV) red-shift in its photoluminescence spectrum. The novel material's spectral properties were consistent with pristine 2H-MoS2 (as determined by HR-TEM, XPS, pXRD, DRIFT, TGA, and Raman spectroscopy). Importantly, it was readily dispersed in H2 O unlike 2H-MoS2 . Its dispersibility properties were explored for a variety of solvents and could be directly correlated with the relative permittivity of the respective solvents. The charged 2H-MoS2 reacted readily with an organo-iodide to deliver functionalized 2H-MoS2 . Our approach delivers aqueous dispersions of semiconducting 2H-MoS2 , without additives or chemical functionalities, and allows for controlled and facile functionalization of 2H-MoS2 opening multiple new avenues of semi-conducting MoS2 application.

Correction: A graphene/h-BN MEMS varactor for sub-THz and THz applications.

Correction for 'A graphene/h-BN MEMS varactor for sub-THz and THz applications' by Piotr A. Drózdz et al., Nanoscale, 2023, https://doi.org/10.1039/d2nr06863j.

A graphene/h-BN MEMS varactor for sub-THz and THz applications.

Recent development of terahertz systems has created the need for new elements operating in this frequency band, i.e., fast tunable devices such as varactors. Here, we present the process flow and characterization of a novel electronic variable capacitor device that is made with the use of 2D metamaterials such as graphene (GR) or hexagonal boron nitride (h-BN). Comb-like structures are etched into a silicon/silicon nitride substrate and a metal electrode is deposited at the bottom. Next, a PMMA/GR/h-BN layer is placed on top of the sample. As voltage is applied between GR and metal, the PMMA/GR/h-BN layer bends towards the bottom electrode thus decreasing the distance between electrodes and changing the capacitance. The high tunability and complementary metal oxide semiconductor (CMOS)-compatible process flow of the platform for our device and its millimeter size make it promising for applications in future electronics and terahertz technologies. The goal of our research is to integrate our device with dielectric rod waveguides, thus making THz phase shifters.

Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation.

The gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced sensing methodology and intermittent UV irradiation. Distinctly different features in 1/f noise spectra for the organic gases measured under UV irradiation and in the dark were observed. The most intense response observed for tetrahydrofuran prompted the decomposition of the DC characteristic, revealing the photoconductive and photogating effect occurring in the graphene channel with the dominance of the latter. Our observations shed light on understanding surface processes at the interface between graphene and volatile organic compounds for graphene-based sensors in ambient conditions that yield enhanced sensitivity and selectivity.

Characterization of Silver Nanowire Layers in the Terahertz Frequency Range.

Thin layers of silver nanowires are commonly studied for transparent electronics. However, reports of their terahertz (THz) properties are scarce. Here, we present the electrical and optical properties of thin silver nanowire layers with increasing densities at THz frequencies. We demonstrate that the absorbance, transmittance and reflectance of the metal nanowire layers in the frequency range of 0.2 THz to 1.3 THz is non-monotonic and depends on the nanowire dimensions and filling factor. We also present and validate a theoretical approach describing well the experimental results and allowing the fitting of the THz response of the nanowire layers by a Drude-Smith model of conductivity. Our results pave the way toward the application of silver nanowires as a prospective material for transparent and conductive coatings, and printable antennas operating in the terahertz range-significant for future wireless communication devices.

Graphene/AlGaN/GaN RF Switch.

RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any system without the use of, e.g., bonding, flip-chip and other technologies and avoiding the matching problems. The on-state insertion losses for the designed switches were measured to range from 7.4 to 19.4 dB, depending on the frequency and switch design. Although, at frequencies above 70 GHz, the switches were less effective, the switching effect was still evident with an approximately 4 dB on-off ratio. The best switches exhibited rise and fall switching times of ~25 ns and ~17 ns, respectively. The use of such a switch can provide up to 20 MHz of bandwidth in time-modulated systems, which is an outstanding result for such systems. The proposed equivalent circuit describes well the switching characteristics and can be used to design switches with required parameters.

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects.

We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results indicate that different density and height of nanowires impact graphene properties such as roughness, strain, and carrier concentration as well as density and type of induced defects. Tracing the manifestation of those interactions is important for the application of novel heterostructures. A detailed analysis of Raman spectra of graphene deposited on different nanowire substrates shows that bigger differences in nanowires height increase graphene strain, while a higher number of nanowires in contact with graphene locally reduces the strain. Moreover, the value of graphene carrier concentration is found to be correlated with the density of nanowires in contact with graphene. The lowest concentration of defects is observed for graphene deposited on nanowires with the lowest density. The contact between graphene and densely arranged nanowires leads to a large density of vacancies. On the other hand, grain boundaries are the main type of defects in graphene on rarely distributed nanowires. Our results also show modification of graphene carrier concentration and strain by different types of defects present in graphene. Therefore, the nanowire substrate is promising not only for strain and carrier concentration engineering but also for defect engineering.

Tuning the Photo-electrochemical Performance of RuII -Sensitized Two-Dimensional MoS2.

Covalently tethering photosensitizers to catalytically active 1T-MoS2 surfaces holds great promise for the solar-driven hydrogen evolution reaction (HER). Herein, we report the preparation of two new RuII -complex-functionalized MoS2 hybrids [RuII (bpy)2 (phen)]-MoS2 and [RuII (bpy)2 (py)Cl]-MoS2 . The influence of covalent functionalization of chemically exfoliated 1T-MoS2 with coordinating ligands and RuII complexes on the HER activity and photo-electrochemical performance of this dye-sensitized system was studied systematically. We find that the photo-electrochemical performance of this RuII -complex-sensitized MoS2 system is highly dependent on the surface extent of photosensitizers and the catalytic activity of functionalized MoS2 . The latter was strongly affected by the number and the kind of functional groups. Our results underline the tunability of the photovoltage generation in this dye-sensitized MoS2 system by manipulation of the surface functionalities, which provides a practical guidance for smart design of future dye-sensitized MoS2 hydrogen production devices towards improved the photofuel conversion efficiency.

Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures.

Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were found to be relatively high, varying within the range of φb = (1.0-1.26) eV. AlGaN/GaN fin-shaped field-effect transistors (finFETs) with a graphene gate were fabricated and studied. These devices demonstrated ~8 order of magnitude on/off ratio, subthreshold slope of ~1.3, and low subthreshold current in the sub-picoamperes range. The effective trap density responsible for the 1/f low-frequency noise was found within the range of (1-5) · 1019 eV-1 cm-3. These values are of the same order of magnitude as reported earlier and in AlGaN/GaN transistors with Ni/Au Schottky gate studied as a reference in the current study. A good quality of graphene/AlGaN Schottky barrier diodes and AlGaN/GaN transistors opens the way for transparent GaN-based electronics and GaN-based devices exploring vertical electron transport in graphene.

Long-Term Psychological Consequences of World War II Trauma Among Polish Survivors: A Mixed-Methods Study on the Role of Social Acknowledgment.

BACKGROUND: The research on the psychological consequences of World War II (WWII) trauma has predominantly focused on concentration camp and Holocaust survivors. Only a few studies have been undertaken among civilian survivors of WWII. OBJECTIVES: The purpose of this study was to examine the association between perceived social acknowledgment of WWII trauma and the level of post-traumatic stress disorder (PTSD) and depressive symptoms among Polish survivors of WWII by employing a mixed-methods design (i.e., a quantitative analysis supported by qualitative interviews). METHOD: In the quantitative part, 123 participants filled out: the list of WWII-related traumatic events, the PTSD Checklist for the Diagnostic and Statistical Manual of Mental Disorders, Fifth Edition (PCL-5), the shortened version of the Geriatric Depression Scale (GDS), and the Social Acknowledgment Questionnaire (SAQ). In the qualitative part, an interpretative phenomenological analysis (IPA) of participants' reminiscences of WWII was examined. RESULTS: Although we observed a direct positive association between the number of WWII-related traumatic events and the intensity of PTSD and depressive symptoms, these relationships changed when we entered the social acknowledgment construct into the model. Specifically, we found that perceived social acknowledgment (general disapproval) was a mediator of the relationship between the number of WWII traumatic events and the intensity of PTSD symptoms only, and not of depressive symptoms. In the qualitative part, three themes relating to traumatic reminiscences emerged among the participants: parental efficacy, parental betrayal, and support from the invader. CONCLUSION: Our study showed the significance of the general social acknowledgment in the long-term mental consequences of the WWII trauma in Poland. In addition, the results of our study may be an adjunct to the discussion on the long-term impact of WWII trauma in Poland and the factors that hindered its social recognition.

Graphene's nonlinear-optical physics revealed through exponentially growing self-phase modulation.

Graphene is considered a record-performance nonlinear-optical material on the basis of numerous experiments. The observed strong nonlinear response ascribed to the refractive part of graphene's electronic third-order susceptibility χ(3) cannot, however, be explained using the relatively modest χ(3) value theoretically predicted for the 2D material. Here we solve this long-standing paradox and demonstrate that, rather than χ(3)-based refraction, a complex phenomenon which we call saturable photoexcited-carrier refraction is at the heart of nonlinear-optical interactions in graphene such as self-phase modulation. Saturable photoexcited-carrier refraction is found to enable self-phase modulation of picosecond optical pulses with exponential-like bandwidth growth along graphene-covered waveguides. Our theory allows explanation of these extraordinary experimental results both qualitatively and quantitatively. It also supports the graphene nonlinearities measured in previous self-phase modulation and self-(de)focusing (Z-scan) experiments. This work signifies a paradigm shift in the understanding of 2D-material nonlinearities and finally enables their full exploitation in next-generation nonlinear-optical devices.

All-polarization-maintaining, stretched-pulse Tm-doped fiber laser, mode-locked by a graphene saturable absorber.

In this Letter, we demonstrate an all-polarization-maintaining, stretched-pulse Tm-doped fiber laser generating ∼200 fs pulses centered at 1945 nm. As a saturable absorber, a graphene/poly(methyl methacrylate) composite was used. To the best of our knowledge, this is the first demonstration of stretched-pulse operation of a graphene-based fiber laser at 2 µm.

260 fs and 1 nJ pulse generation from a compact, mode-locked Tm-doped fiber laser.

We report on generation of 260 fs-short pulses with energy of 1.1 nJ from a fully fiberized, monolithic Tm-doped fiber laser system. The design comprises a simple, graphene-based ultrafast oscillator and an integrated all-fiber chirped pulse amplifier (CPA). The system generates 110 mW of average power at 100.25 MHz repetition rate and central wavelength of 1968 nm. This is, to our knowledge, the highest pulse energy generated from a fully fiberized sub-300 fs Tm-doped laser, without the necessity of using grating-based dispersion compensation. Such compact, robust and cost-effective system might serve as a seed source for nonlinear frequency conversion or mid-infrared supercontinuum generation.

Sub-90 fs a stretched-pulse mode-locked fiber laser based on a graphene saturable absorber.

In this paper a stretched-pulse, mode-locked Er-doped fiber laser based on graphene saturable absorber (SA) is presented. A 60 layer graphene/polymer composite was used as a SA. The all-fiber dispersion managed laser resonator with the repetition frequency of 21.15 MHz allows for Gaussian pulses generation with the full width at half maximum (FWHM) of 48 nm. The generated chirped pulses were compressed outside the cavity to the 88 fs using a piece of standard single mode fiber. The average output power and pulse energy were of 1.5 mW and 71 pJ, respectively.

Laser ablation- and plasma etching-based patterning of graphene on silicon-on-insulator waveguides.

We present a new approach to remove monolayer graphene transferred on top of a silicon-on-insulator (SOI) photonic integrated chip. Femtosecond laser ablation is used for the first time to remove graphene from SOI waveguides, whereas oxygen plasma etching through a metal mask is employed to peel off graphene from the grating couplers attached to the waveguides. We show by means of Raman spectroscopy and atomic force microscopy that the removal of graphene is successful with minimal damage to the underlying SOI waveguides. Finally, we employ both removal techniques to measure the contribution of graphene to the loss of grating-coupled graphene-covered SOI waveguides using the cut-back method.

All-polarization maintaining, graphene-based femtosecond Tm-doped all-fiber laser.

We report an all-fiber, all-polarization maintaining (PM) ultrafast Tm-doped fiber laser mode-locked by a multilayer graphene-based saturable absorber (SA). The laser emits 603 fs-short pulses centered at 1876 nm wavelength with 6.6 nm of bandwidth and 41 MHz repetition rate. Graphene used as saturable absorber was obtained via chemical vapor deposition (CVD) on copper substrate and immersed in a poly(methylmethacrylate) (PMMA) support, forming a stable, free-standing foil containing 12 graphene layers, suitable for the use in a fiber laser. The generated 603 fs pulses are the shortest reported pulses achieved from a Tm-doped laser mode-locked by graphene saturable absorber so far. Additionally, this is the first demonstration of an all-PM Tm-doped fiber laser incorporating a graphene-based SA. Such cost-effective, compact and stable fiber lasers might be considered as sources usable in nonlinear frequency conversion, mid-infrared spectroscopy and remote sensing.

Residual metallic contamination of transferred chemical vapor deposited graphene.

Integration of graphene with Si microelectronics is very appealing by offering a potentially broad range of new functionalities. New materials to be integrated with the Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etching and electrochemical delamination methods with respect to residual submonolayer metallic contaminations. Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 10(13) atoms/cm(2). These metal impurities appear to be partially mobile upon thermal treatment, as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics, these results reveal that further progress in synthesis, handling, and cleaning of graphene is required to advance electronic and optoelectronic applications.

Passive synchronization of erbium and thulium doped fiber mode-locked lasers enhanced by common graphene saturable absorber.

In this work we present for the first time, to the best of our knowledge, a passively synchronized thulium (Tm) and erbium (Er) doped fiber laser mode-locked by a common graphene saturable absorber (GSA). The laser consists of two ring resonators combined with a 90 cm long common fiber branch incorporating the saturable absorber (SA). Such laser generates optical solitons centered at 1558.5 nm and 1938 nm with pulse durations of 915 fs and 1.57 ps, respectively. Both laser loops were passively synchronized at repetition frequency of 20.5025 MHz by nonlinear interaction (cross phase modulation, XPM) in common fiber branch between generated pulses. The maximum cavity mismatch of the Er-laser in synchronization regime was 0.78 mm. The synchronization mechanism was also investigated. We demonstrate that the third order nonlinearities of graphene enhance the synchronization range. In our case the range was increased about 85%. The integrated RMS timing jitter between the synchronized pulses was 67 fs.

Simultaneous mode-locking at 1565 nm and 1944 nm in fiber laser based on common graphene saturable absorber.

We present for the first time to the best of our knowledge an all-fiber thulium (Tm) and erbium (Er) doped fiber laser simultaneously mode-locked by a common graphene saturable absorber. The laser consists of two ring resonators combined with a common saturable absorber (SA). The generated optical solitons have a full width at half maximum (FWHM) of 3.9 nm and 4.2 nm for Tm- and Er-doped laser, respectively. The used graphene layers were grown on copper foils by chemical vapor deposition (CVD) and transferred onto the fiber connector end. Broadband and flat absorption spectrum of used SA supports mode-locked operation at 1565 nm and 1944 nm. The repetition frequency of the resonator with Er-doped fiber was 20.19 MHz while the Tm-doped resonator was around 1 m longer and resulted with repetition rate of 18.43 MHz. The reported experiment unambiguously confirms one of the biggest advantage of the carbon nanomaterial (in this case graphene) SAs over semiconductor saturable absorption mirrors (SESAM), which is broadband operation range, allowing to mode-lock two lasers spectrally separated by almost 400 nm.