Highly switchable absorption in a metal hydride device using a near-zero-index substrate.

Optical switchability is an important functionality for photonic devices, which allows them to accommodate a wide range of applications. One way to achieve this switchability is to utilize the reversible and tunable optical changes of metal hydrides. When exposed to H2 gas, certain metals go through dramatic changes in optical properties as hydrogen atoms expand the lattice spacing. In this paper, we propose a switchable absorption device consisting of a Pd-capped Mg thin film deposited onto a near-zero-index substrate. By utilizing Mg's extreme optical changes upon hydrogenation and combining it with the high optical contrast of the near-zero-index substrate, we can create a device that is fully switchable from a highly reflective state to a broadband absorbing state. When modeling the substrate as a Drude material with a plasma wavelength of 600 nm, we calculate an absorption change of > 70% from 650-1230 nm, with a peak total absorption of 78% at 905 nm. We experimentally demonstrate this effect using 25 nm of Mg with a 3 nm Pd capping layer deposited onto an ITO-coated glass substrate. This device achieves an absorption change of 76% at 1335 nm illumination, with a maximum absorption of 93% in the hydride state, utilizing ITO's near-zero-index region in the near-infrared. By tuning the near-zero-index region of the substrate, this effect can be extended from the visible through the infrared.

Interfacial Defect-Mediated Near-Infrared Silicon Photodetection with Metal Oxides.

Due to recent breakthroughs in silicon photonics, sub-band-gap photodetection in silicon (Si) has become vital to the development of next-generation integrated photonic devices for telecommunication systems. In particular, photodetection in Si using complementary metal-oxide semiconductor (CMOS) compatible materials is in high demand for cost-effective integration. Here, we achieve broad-band near-infrared photodetection in Si/metal-oxide Schottky junctions where the photocurrent is generated from interface defects induced by aluminum-doped zinc oxide (AZO) films deposited on a Si substrate. The combination of photoexcited carrier generation from both interface defect states and intrinsic Si bulk defect states contributes to a photoresponse of 1 mA/W at 1325 nm and 0.22 mA/W at 1550 nm with zero-biasing. From a fit to the Fowler equation for photoemission, we quantitatively determine the individual contributions from these effects. Finally, using this analysis, we demonstrate a gold-nanoparticle-coated photodiode that has three distinct photocurrent responses resulting from hot carriers in the gold, interface defects from the AZO, and bulk defects within the Si. The hot carrier response is found to dominate near the band gap of Si, while the interface defects dominate for longer wavelengths.

Pulsed laser deposition films from a Ba2FeMoO6 target onto SrTiO3[001]: Chemical and magnetic inhomogeneity.

Pulsed laser deposition films from Ba2FeMoO6 (BFMO) targets onto SrTiO3[001] (STO) substrates have been reported previously to have non-zero magnetism at 300 K, a majority of magnetic ordering at 240 K that is less than the 370 K ordering temperature of polycrystalline BFMO, and suppressed saturation magnetization compared to polycrystalline BFMO. To interrogate these previously reported observations of BFMO on STO, we have used a combination of x-ray diffraction, atomic force microscopy, x-ray and neutron reflectivity, and x-ray photoelectron spectroscopy that shows inhomogeneities. The present results show off-stoichiometry on the A-site by incorporation of Sr from the substrate and on the B-site to have %Fe/%Mo > 1 by evolution of BaMoO4. There is an enhanced ordering temperature and magnetic response nearer to the SrTiO3 interface compared to the air interface. Depth dependent strain and microstructure are needed to explain the magnetic response. Holistic considerations and implications are also discussed.