Temperature-Induced Topological Phase Transition in HgTe Quantum Wells.

We report a direct observation of temperature-induced topological phase transition between the trivial and topological insulator states in an HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures, and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electronlike and holelike subbands. Their crossing at a critical magnetic field B_{c} is a characteristic of inverted band structure in the quantum well. By measuring the temperature dependence of B_{c}, we directly extract the critical temperature T_{c} at which the bulk band gap vanishes and the topological phase transition occurs. Above this critical temperature, the opening of a trivial gap is clearly observed.

Phase transitions in two tunnel-coupled HgTe quantum wells: Bilayer graphene analogy and beyond.

HgTe quantum wells possess remarkable physical properties as for instance the quantum spin Hall state and the "single-valley" analog of graphene, depending on their layer thicknesses and barrier composition. However, double HgTe quantum wells yet contain more fascinating and still unrevealed features. Here we report on the study of the quantum phase transitions in tunnel-coupled HgTe layers separated by CdTe barrier. We demonstrate that this system has a 3/2 pseudo spin degree of freedom, which features a number of particular properties associated with the spin-dependent coupling between HgTe layers. We discover a specific metal phase arising in a wide range of HgTe and CdTe layer thicknesses, in which a gapless bulk and a pair of helical edge states coexist. This phase holds some properties of bilayer graphene such as an unconventional quantum Hall effect and an electrically-tunable band gap. In this "bilayer graphene" phase, electric field opens the band gap and drives the system into the quantum spin Hall state. Furthermore, we discover a new type of quantum phase transition arising from a mutual inversion between second electron- and hole-like subbands. This work paves the way towards novel materials based on multi-layered topological insulators.

Temperature-driven massless Kane fermions in HgCdTe crystals.

It has recently been shown that electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in condensed matter systems. These single valley relativistic states, massless Kane fermions, cannot be described by any other relativistic particles. Furthermore, the HgCdTe band structure can be continuously tailored by modifying cadmium content or temperature. At critical concentration or temperature, the bandgap collapses as the system undergoes a semimetal-to-semiconductor topological phase transition between the inverted and normal alignments. Here, using far-infrared magneto-spectroscopy we explore the continuous evolution of band structure of bulk HgCdTe as temperature is tuned across the topological phase transition. We demonstrate that the rest mass of Kane fermions changes sign at critical temperature, whereas their velocity remains constant. The velocity universal value of (1.07±0.05) × 10(6) m s(-1) remains valid in a broad range of temperatures and Cd concentrations, indicating a striking universality of the pseudo-relativistic description of the Kane fermions in HgCdTe.

Magnetoplasmon excitations from integer-filled Landau levels in narrow-gap quantum wells.

We report a theoretical study on magnetoplasmon excitations in a perpendicular magnetic field in n-type narrow-gap quantum wells (QWs). Using the Hartree-Fock approximation based on the 8 × 8 k · p Hamiltonian, we calculate magnetoplasmon dispersions in symmetric and asymmetric InAs/AlSb QWs for the case of integer-filled Landau levels. We demonstrate a significant dependence of the shape of magnetoplasmon dispersions on the 2D electron concentration, as well as a nonlinear dependence of the magnetoplasmon energy on the wavevector at small values of k. Both effects are shown to result from strong mixing between the conduction (Γ6) and the valence (Γ7 and Γ8) bands. We find that cyclotron-resonance (CR) energies are affected by electron-electron interaction due to Kohn theorem violation and predict the interaction-induced enhancement of the CR line splitting in the case of even (Δg-splitting) and odd (Δm-splitting) filling factors for the Landau levels.

Electron spin resonance and cyclotron resonance for fractional quantum Hall states in narrow-gap QW heterostructures.

We report a theoretical study of the energies of cyclotron resonance (CR) and electron spin resonance (ESR) for fractional quantum Hall states (FQHS) in n-type narrow-gap quantum well (QW) heterostructures. Using the generalized single-mode approximation (GSMA) based on the 8-band k·p Hamiltonian, we calculate the many-body corrections to the CR and ESR energies for FQHS, providing theoretical evidence of the Kohn and Larmor theorem violation in narrow-gap QWs. We predict the correlation-induced reduction of CR energies and the correlation-induced enhancement of ESR energies as compared with the values obtained within the Hartree-Fock approximation. We demonstrate a nonlinear dependence of the CR and ESR energies on a Landau level filling factor.

Exchange interaction effects in electron spin resonance: Larmor theorem violation in narrow-gap quantum well heterostructures.

We report a theoretical study of the exchange interaction effects in the electron spin resonance (ESR) in n-type narrow-gap quantum well (QW) heterostructures. Using the Hartree-Fock approximation, based on the eight-band k⋅p Hamiltonian, the many-body correction to the ESR energy is found to be nonzero, providing theoretical evidence of Larmor theorem violation in symmetric narrow-gap QWs. We predict the exchange enhancement of the ESR g-factor and its divergence in low magnetic fields. The 'enhanced' ESR g-factor and quasiparticle g-factor, measured in magnetotransport, coincide at even-valued filling factors of the Landau levels in moderate and quantizing magnetic fields.

The effect of exchange interaction on quasiparticle Landau levels in narrow-gap quantum well heterostructures.

Using the 'screened' Hartree-Fock approximation based on the eight-band k·p Hamiltonian, we have extended our previous work (Krishtopenko et al 2011 J. Phys.: Condens. Matter 23 385601) on exchange enhancement of the g-factor in narrow-gap quantum well heterostructures by calculating the exchange renormalization of quasiparticle energies, the density of states at the Fermi level and the quasiparticle g-factor for different Landau levels overlapping. We demonstrate that exchange interaction yields more pronounced Zeeman splitting of the density of states at the Fermi level and leads to the appearance of peak-shaped features in the dependence of the Landau level energies on the magnetic field at integer filling factors. We also find that the quasiparticle g-factor does not reach the maximum value at odd filling factors in the presence of large overlapping of spin-split Landau levels. We advance an argument that the behavior of the quasiparticle g-factor in weak magnetic fields is defined by a random potential of impurities in narrow-gap heterostructures.

Theory of g-factor enhancement in narrow-gap quantum well heterostructures.

We report on the study of the exchange enhancement of the g-factor in the two-dimensional (2D) electron gas in n-type narrow-gap semiconductor heterostructures. Our approach is based on the eight-band k⋅p Hamiltonian and takes into account the band nonparabolicity, the lattice deformation, the spin-orbit coupling and the Landau level broadening in the δ-correlated random potential model. Using the 'screened' Hartree-Fock approximation we demonstrate that the exchange g-factor enhancement not only shows maxima at odd values of Landau level filling factors but, due to the conduction band nonparabolicity, persists at even filling factor values as well. The magnitude of the exchange enhancement, the amplitude and the shape of the g-factor oscillations are determined by both the screening of the electron-electron interaction and the Landau level width. The 'enhanced' g-factor values calculated for the 2D electron gas in InAs/AlSb quantum well heterostructures are compared with our earlier experimental data and with those obtained by Mendez et al (1993 Phys. Rev. B 47 13937) in magnetic fields up to 30 T.