Detection of sub-10 nm emission profile features in organic light-emitting diodes using destructive interference.

The position of light-emitting molecules can be identified using interferometric approaches. Standard schemes utilize constructive interference to obtain a sectioned area of interest with high detection efficiency. The examination of organic light-emitting diodes (OLED) removes the common constraint of low light levels and enables a more generalized analysis. The OLED emitters are located in the front of a metal mirror, giving rise to an approximate two-wave fringe pattern in the far field. It is demonstrated theoretically and experimentally that positions around the field nodes enable the extraction of emitter distribution details within an electroluminescent layer of only 10 nm thickness.