Eye-safe 1.55 µm passively Q-switched Er,Yb:GdAl3(BO3)4 diode-pumped laser.

We report for the first time, to the best of our knowledge, on a diode-pumped passively Q-switched Er,Yb:GdAl3(BO3)4 laser. By using a Co2+:MgAl2O4 crystal as a saturable absorber, Q-switched laser pulses with a duration of 12 ns and a maximum energy of 18.7 µJ at a repetition rate of 32 kHz corresponding to an average output power of 0.6 W were obtained at 1550 nm under continuous-wave pumping. In the burst mode of operation, Q-switched laser pulses with the highest energy up to 44 µJ were realized with a pulse repetition rate of 6.5 kHz.

Dispersion and anisotropy of thermo-optic coefficients in tetragonal GdVO(4) and YVO(4) laser host crystals: erratum.

We addressed errors found in our measurements of thermo-optic coefficients and thermal coefficients of the optical path (TCOP) in tetragonal vanadates, YVO(4) and GdVO(4) [Appl. Opt.52, 698 (2013)]. Modified thermo-optic dispersion formulas are presented for these laser host crystals.

High-power, efficient, semiconductor saturable absorber mode-locked Yb:KGW bulk laser.

A high-power, diode-pumped, semiconductor saturable absorber mode-locked Yb(5%):KGW bulk laser was demonstrated with high optical-to-optical efficiency. Average output power as high as 8.8 W with optical-to-optical efficiency of 37.5% was obtained for Nm-polarized laser output with 162 fs pulse duration and 142 nJ pulse energy at a pulse repetition frequency of 62 MHz. For Np polarization, 143 fs pulses with pulse energy of 139 nJ and average output power of up to 8.6 W with optical-to-optical efficiency of 31% were generated.

Highly efficient 12 W diode-pumped actively Q-switched Yb:KGd(WO4)2 laser.

A compact diode-pumped actively Q-switched Yb:KGW laser is demonstrated with an optical-to-optical efficiency of 50%. In a 3-mirror laser cavity configuration output power of 12.2 W with repetition rate up to 50 kHz and pulse duration of 10-24 ns was obtained. The maximum pulse peak power of 70 kW was achieved. The laser output beam profile was Gaussian up to maximum pump powers with M2 factor less than 1.2.

Highly efficient continuous-wave diode-pumped Er, Yb:GdAl3(BO3)4 laser.

We report the highly efficient continuous-wave diode-pumped laser operation of Er, Yb:GdAl3(BO3)4 crystal. Absorption and stimulated emission spectra, emission lifetimes, and efficiencies of energy transfer from Yb3+ to Er3+ ions were determined. A maximal output power of 780 mW was obtained at 1531 nm at absorbed pump power of 4 W with slope efficiency of 26%.

High average power 1314 nm Nd:YLF laser, passively Q-switched with V:YAG.

A 1314 nm Nd:YLF laser was designed and operated both CW and passively Q-switched. Maximum CW output of 10.4 W resulted from 45.2 W of incident pump power. Passive Q-switching was obtained by inserting a V:YAG saturable absorber in the cavity. The oscillator delivered a maximum of 825 µJ energy per pulse, with a pulse duration of 135 ns at a pulse repetition frequency of 6.3 kHz, effectively delivering 5.2 W of average power.

Passively Q-switched microchip Er, Yb:YAl3(BO3)4 diode-pumped laser.

We report, for the first time to our knowledge, a diode-pumped cw and passively Q-switched microchip Er, Yb:YAl(3)(BO(3))(4) laser. A maximal output power of 800 mW at 1602 nm in the cw regime was obtained at an absorbed pump power of 7.7 W. By using Co(2+):MgAl(2)O(4) as a saturable absorber, a TEM(00)-mode Q-switched average output power of 315 mW was demonstrated at 1522 nm, with pulse duration of 5 ns and pulse energy of 5.25 µJ at a repetition rate of 60 kHz.

Broadly tunable femtosecond mode-locking in a Tm:KYW laser near 2 µm.

Efficient mode-locking in a Tm:KY(WO(4))(2) laser is demonstrated by using InGaAsSb quantum-well SESAMs. Self-starting ultrashort pulse generation was realized in the 1979-2074 nm spectral region. Maximum average output power up to 411 mW was produced around 1986 nm with the corresponding pulse duration and repetition rate of 549 fs and 105 MHz respectively. Optimised pulse durations of 386 fs were produced with an average power of 235 mW at 2029 nm.

Femtosecond pulse operation of a Tm,Ho-codoped crystalline laser near 2 microm.

We demonstrate, for the first time to our knowledge, femtosecond-regime mode locking of a Tm,Ho-codoped crystalline laser operating in the 2 microm spectral region. Transform-limited 570 fs pulses were generated at 2055 nm by a Tm,Ho:KY(WO(4))(2) laser that produced an average output power of 130 mW at a pulse repetition frequency of 118 MHz. Mode locking was achieved using an ion-implanted InGaAsSb quantum-well-based semiconductor saturable absorber mirror.

Passive mode locking of a Tm,Ho:KY(WO4)2 laser around 2 microm.

We report the first demonstration, to our knowledge, of passive mode locking in a Tm(3+), Ho(3+)-codoped KY(WO(4))(2) laser operating in the 2000-2060 nm spectral region. An InGaAsSb-based quantum well semiconductor saturable absorber mirror is used for the initiation and stabilization of the ultrashort pulse generation. Pulses as short as 3.3 ps were generated at 2057 nm with average output powers up to 315 mW at a pulse repetition frequency of 132 MHz for 1.15 W of absorbed pump power at 802 nm from a Ti:sapphire laser.

Continuous-wave and Q-switched operation of a compact, diode-pumped Yb3+:KY(WO4)2 planar waveguide laser.

A diode-pumped LPE-grown Yb:KYW planar waveguide laser is demonstrated in a microchip monolithic cavity configuration. Output powers as high as 148 mW and thresholds as low as 40 mW were demonstrated during continuous-wave operation. Pulses of 170 ns duration with maximum pulse energy of 44 nJ at a 722 kHz repetition rate were generated when Q-switched using a semiconductor saturable absorber mirror.

Thermal lens study in diode pumped Ng- and Np-cut Nd:KGd(WO4)2 laser crystals.

A comparative study of thermal lensing effect in diode laser pumped Ng- and Np-cut Nd:KGd(WO4)2 (KGW) laser crystals was performed for laser emission polarized along the principle refractive axis, Nm. The thermal lens in the Ng-cut Nd: KGW was found to be weakly astigmatic with a positive refractive power for both the Nm- and Np-directions. For Np -cut Nd:KGW, strong astigmatism was observed and the refractive powers in the Ng- and Nm-directions had opposing signs. The degree of astigmatism was found to be considerably weaker for the Ng-cut Nd:KGW in comparison with the Np-cut one: 0.35 dptr/(W/cm2) and 2.85 dptr/(W/cm2), respectively. The ratio of the thermal lens refractive powers in the planes parallel and perpendicular to the laser emission polarisation were measured as +1.4 and -0.425 for Ng- and Np-cut Nd:KGW respectively.

Ultrafast laser inscribed Yb:KGd(WO4)2 and Yb:KY(WO4)2 channel waveguide lasers.

We demonstrate laser action in diode-pumped microchip monolithic cavity channel waveguides of Yb:KGd(WO(4))(2) and Yb:KY(WO(4))(2) that were fabricated by ultrafast laser writing. The maximum output power achieved was 18.6 mW with a threshold of approximately 100 mW from an Yb:KGd(WO(4))(2) waveguide laser operating at 1023 nm. The propagation losses for this waveguide structure were measured to be 1.9 dBcm(-1).

Diode-pumped passively mode-locked Er,Yb:YAl3(BO3)4 laser at 1.5-1.6 microm.

We report the first demonstration to our knowledge of passive mode locking in a diode-pumped Er(3+) and Yb(3+) codoped YAl(3)(BO(3))(4) laser operating in the 1.5-1.6 microm spectral region. Low-loss GaInNAs quantum-well semiconductor saturable absorber mirrors are used for the initiation and stabilization of the ultrashort-pulse generation. Pulses as short as 4.8 ps were generated at 1530 nm with an average output power up to 280 mW for 2 W of absorbed pump power produced by a high-brightness tapered 980 nm laser diode. Passive mode locking has also been demonstrated around 1555 nm with typical average powers of around 100 mW and pulse durations of 5.1 ps.

Yb3+-doped YVO4 crystal for efficient Kerr-lens mode locking in solid-state lasers.

We report the first demonstration, to our knowledge, of soft-aperture Kerr-lens mode locking in a diode-pumped femtosecond Yb3+:YVO4 laser. Near-transform-limited pulses as short as 61 fs are generated around a center wavelength of 1050 nm with an output power of 54 mW and a pulse repetition frequency of 104.5 MHz. This is, to our knowledge, the shortest pulse generated directly from an Yb laser having a crystalline host material. The femtosecond operation has a mode-locking threshold at an absorbed pump power of 190 mW. The nonlinear refractive indexes of the Yb3+:YVO4 crystal have been measured to be 19 x 10(-16) cm2/W and 15 x 10(-16) cm2/W for the sigma and pi polarizations, respectively, at 1080 nm.

Femtosecond pulse generation with a diode-pumped Yb3+:YVO4 laser.

A diode-pumped Yb:YVO4 laser has been passively mode locked for the first time, to our knowledge. 120 fs pulses with an average output power of 300 mW and a peak power as high as 14.5 kW are obtained by use of a semiconductor saturable-absorber mirror for passive mode locking. The optical spectrum has a 10 nm bandwidth (full width at half-maximum) and is centered at 1021 nm.

Spectroscopy and continuous-wave diode-pumped laser action of Yb3+:YVO4.

The growth, spectroscopic properties, and laser performance of Yb:YVO4 crystal with laser diode pumping are reported. A peak absorption cross section of 7.4 x 10(-20) cm2 at 985 nm, a radiative lifetime of 0.25 ms, and a stimulated-emission cross section of 1.25 x 10(-20) cm2 at 1008 nm for pi polarization were determined for the Yb3+ ions in YVO4. Continuous-wave laser action of Yb:YVO4 at 1020-1027 nm was demonstrated with an output power of 610 mW and a slope efficiency of 49%.

1.9- m and 2.0- m laser diode pumping of Cr(2+) :ZnSe and Cr(2+) :CdMnTe.

Efficient diode pumping at wavelengths of 1.9 and 2.0microm of a Cr(2+): ZnSe laser with an output power of 105 mW and a slope efficiency of 35% with respect to the absorbed pump power is presented. In addition, Cr(2+): CdMnTe has been laser diode pumped as well as operated in the continuous-wave regime, to the best of our knowledge for the first time.

240-fs pulses with 22-W average power from a mode-locked thin-disk Yb:KY(WO(4))(2) laser.

We demonstrate what is to our knowledge the first passively mode-locked thin-disk Yb:KY(WO(4))(2) laser. The laser produces pulses of 240-fs duration with an average power of 22 W at a center wavelength of 1028 nm. At a pulse repetition rate of 25 MHz, the pulse energy is 0.9microJ , and the peak power is as high as 3.3 MW. The beam quality is very close to the diffraction limit, with M(2)=1.1 .

Passive Q switching and self-frequency Raman conversion in a diode-pumped Yb:KGd(WO(4))(2) laser.

We report on the laser performance of a diode-pumped Yb:KGd(WO(4))(2) laser that is passively Q switched with a Cr(4+):YAG saturable absorber. Raman conversion of fundamental laser emission in the laser crystal was demonstrated. Q-switched 3.4-mu;J pulses with a pulse width of 85 ns were obtained at the 1033-nm fundamental wavelength and 0.4-mu;J pulses with a pulse width of 20 ns were produced in a first Stokes at 1139 nm.