RESUMO
Silicon quantum dot multilayer (Si-QDML) is a promising material for a light absorber of all silicon tandem solar cells due to tunable bandgap energy in a wide range depending on the silicon quantum dot (Si-QD) size, which is possible to overcome the Shockley-Queisser limit. Since solar cell performance is degenerated by carrier recombination through dangling bonds (DBs) in Si-QDML, hydrogen termination of DBs is crucial. Hydrogen plasma treatment (HPT) is one of the methods to introduce hydrogen into Si-QDML. However, HPT has a large number of process parameters. In this study, we employed Bayesian optimization (BO) for the efficient survey of HPT process parameters. Photosensitivity (PS) was adopted as the indicator to be maximized in BO. PS (σp/σd) was calculated as the ratio of photoconductivity (σp) and dark conductivity (σd) of Si-QDML, which allowed the evaluation of important electrical characteristics in solar cells easily without fabricating process-intensive devices. 40-period layers for Si-QDML were prepared by plasma-enhanced chemical vapor deposition method and post-annealing onto quartz substrates. Ten samples were prepared by HPT under random conditions as initial data for BO. By repeating calculations and experiments, the PS was successfully improved from 22.7 to 347.2 with a small number of experiments. In addition, Si-QD solar cells were fabricated with optimized HPT process parameters; open-circuit voltage (VOC) and fill factor (FF) values of 689 mV and 0.67, respectively, were achieved. These values are the highest for this type of device, which were achieved through an unprecedented attempt to combine HPT and BO. These results prove that BO is effective in accelerating the optimization of practical process parameters in a multidimensional parameter space, even for novel indicators such as PS.
