On the growth mode of two-lobed curvilinear graphene domains at atmospheric pressure.

We demonstrate the chemical vapor deposition (CVD) growth of 2-lobed symmetrical curvilinear graphene domains specifically on Cu{100} surface orientations at atmospheric pressure. We utilize electron backscattered diffraction, scanning electron microscopy and Raman spectroscopy to determine an as-yet unexplored growth mode producing such a shape and demonstrate how its growth and morphology are dependent on the underlying Cu crystal structure especially in the high CH4:H2 regime. We show that both monolayer and bilayer curvilinear domains are grown on Cu{100} surfaces; furthermore, we show that characteristic atmospheric pressure CVD hexagonal domains are grown on all other Cu facets with an isotropic growth rate which is more rapid than that on Cu{100}. These findings indicate that the Cu-graphene complex is predominant mechanistically at atmospheric pressure, which is an important step towards tailoring graphene properties via substrate engineering.

Out-of-plane growth of CNTs on graphene for supercapacitor applications.

This paper describes the fabrication and characterization of a hybrid nanostructure comprised of carbon nanotubes (CNTs) grown on graphene layers for supercapacitor applications. The entire nanostructure (CNTs and graphene) was fabricated via atmospheric pressure chemical vapor deposition (APCVD) and designed to minimize self-aggregation of the graphene and CNTs. Growth parameters of the CNTs were optimized by adjusting the gas flow rates of hydrogen and methane to control the simultaneous, competing reactions of carbon formation toward CNT growth and hydrogenation which suppresses CNT growth via hydrogen etching of carbon. Characterization of the supercapacitor performance of the CNT-graphene hybrid nanostructure indicated that the average measured capacitance of a fabricated graphene-CNT structure was 653.7 µF cm(-2) at 10 mV s(-1) with a standard rectangular cyclic voltammetry curve. Rapid charging-discharging characteristics (mV s(-1)) were exhibited with a capacitance of approximately 75% (490.3 µF cm(-2)). These experimental results indicate that this CNT-graphene structure has the potential towards three-dimensional (3D) graphene-CNT multi-stack structures for high-performance supercapacitors.