Simple and Cost-effective Synthesis of a Rare-earth Free Long Afterglow Phosphor for Dark Visual Markings.

Materials with long afterglow (LAG) became very renowned in the field of luminescence due to their high ability to store energy. However, the development of LAG phosphors is mostly dependent on rare-earth activators, which are commercially expensive due to their limited availability across the world. On the other hand, LAG phosphors that are not based on rare-earth and are developed as an alternative cannot compete with existing rare-earth LAG phosphors. Copper-doped zinc sulfide (ZnS:Cu) phosphor developed long ago has considerable afterglow, but its development has been too tedious, and expensive, and contains usage of toxic gasses such as H2S, CS2, etc. and most of the literature refers to the cubic phase of ZnS. To overcome these issues and simplify the process, we have developed a cost-effective approach to synthesize the hexagonal phase of ZnS, without the involvement of hazardous gases. This is one of the very few reports that highlights the appearance of LAG phenomenon from the hexagonal ZnS:Cu phosphor system. Structural, morphological, and optical studies of the developed ZnS:Cu LAG phosphor have been carried out. The phosphor showed a strong green photoluminescence at 515 nm and an afterglow duration of ~ 1 h useful for specific applications of visual markings in dark conditions. The thermoluminescence spectrum shows a broad and intense glow peak at 377.15 K that indicates the electron trap depth to be at 0.75 eV, supporting our afterglow results.

Biocompatible and Antibacterial SnO2 Nanowire Films Synthesized by E-Beam Evaporation Method.

In this work, the biocompatibility and antibacterial activities of novel SnO2 nanowire coatings prepared by electron-beam (E-Beam) evaporation process at low temperatures were studied. The nanowire coatings were characterized by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), and X-ray diffraction (XRD) methods. The results of in vitro cytotoxicity and cell proliferation assays suggested that the SnO2 nanowire coatings were nontoxic and promoted the proliferation of C2C12 and L929 cells (> 90% viability). Cellular activities, cell adhesion, and lactate dehydrogenase activities were consistent with the superior biocompatibility of the nanowire materials. Notably, the nanowire coating showed potent antibacterial activity against six different bacterial strains. The antibacterial activity of the SnO2 material was attributed to the photocatalytic nature of SnO2. The antibacterial activity and biocompatibility of the newly developed SnO2 nanowire coatings may enable their use as coating materials for biomedical implants.

Self catalytic growth of indium oxide (In2O3) nanowires by resistive thermal evaporation.

Self catalytic growth of Indium Oxide (In2O3) nanowires (NWs) have been grown by resistive thermal evaporation of Indium (In) in the presence of oxygen without use of any additional metal catalyst. Nanowires growth took place at low substrate temperature of 370-420 degrees C at an applied current of 180-200 A to the evaporation boat. Morphology, microstructures, and compositional studies of the grown nanowires were performed by employing field emission scanning electron microscopy (FESEM), X-Ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) respectively. Nanowires were uniformly grown over the entire Si substrate and each of the nanowire is capped with a catalyst particle at their end. X-ray diffraction study reveals the crystalline nature of the grown nanowires. Transmission electron microscopy study on the nanowires further confirmed the single crystalline nature of the nanowires. Energy dispersive X-ray analysis on the nanowires and capped nanoparticle confirmed that Indium act as catalyst for In2O3 nanowires growth. A self catalytic Vapor-Liquid-Solid (VLS) growth mechanism was responsible for the growth of In2O3 nanowires. Effect of oxygen partial pressure variation and variation of applied currents to the evaporation boat on the nanowires growth was systematically studied. These studies concluded that at oxygen partial pressure in the range of 4 x 10(-4), 6 x 10(-4) mbar at applied currents to the evaporation boat of 180-200 A were the best conditions for good nanowires growth. Finally, we observed another mode of VLS growth along with the standard VLS growth mode for In2O3 nanowires similar to the growth mechanism reported for GaAs nanowires.