High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping.

We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m(-1) K(-1), and the estimated figure of merit is 0.29 at 1000 K.

A hot probe setup for the measurement of Seebeck coefficient of thin wires and thin films using integral method.

An experimental setup is developed for the measurement of the Seebeck coefficient of thin wires and thin films in the temperature range of 300-650 K. The setup makes use of the integral method for measuring the Seebeck voltage across the sample. Two pointed copper rods with in-built thermocouples serve as hot and cold probes as well as leads for measuring the Seebeck voltage. The setup employs localized heating and enables easy sample loading using a spring loaded mounting system and is fully automated. Test measurements are made on a constantan wire and indium tin oxide (ITO) thin film for illustration. The Seebeck voltage obtained for constantan wire is in agreement with the NIST data for copper constantan couple with an error of 1%. The calculated carrier concentration of ITO film from the Seebeck coefficient measurement is comparable with that obtained by electrical transport measurements. The error in the Seebeck coefficient is estimated to be within 3%.