Reduced trap-density and boosted performance of CH3NH3PbI3solar cells by 1-Pentanethiol enhanced anti-solvent washing route.

Performance and the stability of the perovskite-based photovoltaic devices are directly linked to existing trap-states or defect profiles at the surface and/or in the bulk of perovskite layers. Hence identification of stemming the defects during perovskite formation is crucial for achieving superior and long-lasting performances. Here, we present the effect of 1-Pentanethiol incorporation into the one-step deposition of perovskite layers. A feasible glove box-free route results in high-quality CH3NH3PbI3layers under highly humid conditions (RH > 50%) but at low temperatures (T< 18 °C). 1-Pentanethiol addition into the washing solvent leads to the refinement of I/Pb stoichiometry, elimination of the iodide deficiencies, and reduction of the trap-state densities. Consequently, a precise amount 1-Pentanethiol addition enhances photovoltaic performances, resulting in a 54% PCE improvement for CH3NH3PbI3-based inverted solar cells.

Boron- and Boric Acid-Treated Titanium Implant Surfaces in Sheep Tibia: A Histologic, Histomorphometric and Mechanical Study.

The aim of this study was to compare the topographical, chemical and osseointegration characteristics of sandblasting and acid-etching (SLA) surfaces and dental implants treated by boron compounds. Titanium (Ti) disks (n = 20) were modified using boron (B) and boric acid (H3BO3) and then compared with the conventional SLA surface via surface topographic characterizations. Dental implants (3.5 mm in diameter and 8 mm in length) with the experimental surfaces (n = 96) were inserted into the tibias of six sheep, which were left to heal for 3 and 7 weeks. Histologic, histomorphometric (bone−implant contact (BIC%)) and mechanical tests (removal torque value (RTV)) were performed. The boron-coated surface (BC group) was smoother (Rz: 4.51 µm ± 0.13) than the SLA (5.86 µm ± 0.80) and the SLA-B (5.75 µm ± 0.64) groups (p = 0.033). After 3 weeks, the highest mean RTV was found in the SLA group (37 N/cm ± 2.87), and the difference compared with the BC group (30 N/cm ± 2.60) was statistically significant (p = 0.004). After 7 weeks, the mean RTV was >80 N/cm in all groups; the highest was measured in the H3BO3-treated (BS) group (89 N/cm ± 1.53) (p < 0.0001). No statistically significant differences were found in the BIC%s during both healing periods between the groups. H3BO3 seems to be a promising medium for dental implant osseointegration.

Well-ordered nanoparticle arrays for floating gate memory applications.

A non-volatile floating gate memory device containing well-ordered Au nanoparticles (NPs) is fabricated as a metal-oxide-semiconductor capacitor structure. With superior control on the size, shape and position of nanoparticles, the presented nano-floating gate memory (NFGM) device possesses almost perfect precision of device geometry. The well-ordered Au NPs embedded within the memory device exhibit large memory window at low operation voltages (8.8V @ ± 15V), fast operation time (<10-4 s) and good retention (up to 107 s). In this work, the structural properties of the NFGM device are correlated with the examined electrical properties. The current results are compared with the other studies in the literature to emphasis the advantages of the precise ordering and geometry of the NPs.