Determination of the electron's solvation site on D2O/Cu(111) using Xe overlayers and femtosecond photoelectron spectroscopy.

We investigate the binding site of solvated electrons in amorphous D(2)O clusters and D(2)O wetting layers adsorbed on Cu(111) by means of two-photon photoelectron (2PPE) spectroscopy. On the basis of different interactions of bulk- or surface-bound solvated electrons with rare gas atoms, titration experiments using Xe overlayers reveal the location of the electron solvation sites. In the case of flat clusters with a height of 2-4 bilayers adsorbed on Cu(111), solvated electrons are found to reside at the ice-vacuum interface, whereas a bulk character is found for solvated electrons in wetting layers. Furthermore, time-resolved experiments are performed to determine the origin of the transition between these different solvation sites with increasing D(2)O coverage. We employ an empirical model calculation to analyse the rate of electron transfer back to the substrate and the energetic stabilization of the solvated electrons, which allows further insight into the binding site for clusters. We find that the solvated electrons reside at the edges of the clusters. Therefore, we attribute the transition from surface- to bulk-solvation to the coalescence of the clusters to a closed ice film occurring at a nominal coverage of 2-3 BL, while the distance of the binding sites to the metal-ice interface is maintained.

Ultrafast electron transfer dynamics at NH3/Cu(111) interfaces: determination of the transient tunneling barrier.

Electron transfer (ET) dynamics at molecule-metal interfaces plays a key role in various fields as surface photochemistry or the development of molecular electronic devices. The bare transfer process is often described in terms of tunneling through an interfacial barrier that depends on the distance of the excited electron to the metal substrate. However, a quantitative characterization of such potential barriers is still lacking. In the present time-resolved two-photon photoemission (2PPE) study of amorphous NH 3 layers on Cu(111) we show that photoinjection of electrons is followed by charge solvation leading to the formation of a transient potential barrier at the interface that determines the ET to the substrate. We demonstrate that the electrons are localized at the ammonia-vacuum interface and that the ET rate depends exponentially on the NH 3 layer thickness with inverse range parameters beta between 1.8 and 2.7 nm (-1). Systematic analysis of this time-resolved and layer thickness-dependent data finally enables the determination of the temporal evolution of the interfacial potential barrier using a simple model description. We find that the tunneling barrier forms after tau E = 180 fs and subsequently rises more than three times faster than the binding energy gain of the solvated electrons.