Wearable and Semitransparent Pressure-Sensitive Light-Emitting Sensor Based on Electrochemiluminescence.

Tactile sensors are being researched as a key technology for developing an electronic skin and a wearable display, which have recently been attracting much attention. However, to develop a next-generation wearable tactile sensor, it is necessary to implement an interactive display that responds immediately to external stimuli. Herein, a wearable and semitransparent pressure-sensitive light-emitting sensor (PLS) based on electrochemiluminescence (ECL) is successfully implemented with visual alarm functions to prevent damage to the human body from external stimuli. The PLS is fabricated with a very simple structure using the ECL gel as the light-emitting layer and a carbon nanotube embedded polydimethylsiloxane as the electrode. The ECL light-emitting layer using a redox reaction is advantageous for the fabrication of next-generation wearable devices due to the advantages of a simple structure and the use of electrodes without work function limitation. The PLS can display various external stimuli immediately and operate at a high luminance, making it safe to use as a wearable sensor. Therefore, the PLS using ECL can be a simple and meaningful solution for next-generation wearable tactile sensors.

Violet Light-Emitting Diodes Based on p-CuI Thin Film/n-MgZnO Quantum Dot Heterojunction.

As the lighting technology evolves, the need for violet light-emitting diodes (LEDs) is growing for high color rendering index lighting. The present technology for violet LEDs is based on the high-cost GaN materials and metal-organic chemical vapor deposition process; therefore, there have recently been intensive studies on developing low-cost alternative materials and processes. In this study, for the first time, we demonstrated violet LEDs based on low-cost materials and processes using a p-CuI thin film/n-MgZnO quantum dot (QD) heterojunction. The p-CuI thin film layer was prepared by an iodination process of Cu films, and the n-MgZnO layer was deposited by spin-coating presynthesized n-MgZnO QDs. To maximize the performance of the violet LED, an optimizing process was performed for each layer of p- and n-type materials. The optimized LED with 1 × 1 mm2-area pixel fabricated using the p-CuI thin film at the iodination temperature of 15 °C and the n-MgZnO QDs at the Mg alloying concentration of 2.7 at. % exhibited the strongest violet emissions at 6 V.

High-Performance Flexible ZnO Nanorod UV/Gas Dual Sensors Using Ag Nanoparticle Templates.

Flexible zinc oxide (ZnO) nanorod (NR) ultraviolet (UV)/gas dual sensors using silver (Ag) nanoparticle (NP) templates were successfully fabricated on a polyimide substrate with nickel electrodes. Arrays of Ag NPs were used as a template for the growth of ZnO NRs, which could enhance the flexibility and the sensing properties of the devices through the localized surface plasmon resonance (LSPR) effect. The Ag NPs were fabricated by the rapid thermal annealing process of Ag thin films, and ZnO NRs were grown on Ag NPs to maximize the surface area and form networks with rod-to-rod contacts. Because of the LSPR effect by Ag NPs, the UV photoresponse of the ZnO NRs was amplified and the depletion region of ZnO NRs was formed quickly because of the Schottky contact with the Ag NPs. As a consequence, ZnO NR UV/gas dual sensors grown on the Ag NP template with a diameter of 28 nm exhibited the outstanding UV-sensing characteristics with a UV on-off ratio of 3628 and a rising time ( tr) and a decay time ( td) of 3.52 and 0.33 s upon UV exposure, along with excellent NO2-sensing characteristics with a stable gas on-off ratio of 288.5 and a tr and td of 38 and 62 s upon NO2 exposure. Furthermore, the sensors grown on the Ag NP template exhibited good mechanical flexibility and stable sensing properties without significant degradation even after the bending test up to 10 000 cycles at the bending radius of 5 mm.

High-performance flexible ZnO nanorod UV photodetectors with a network-structured Cu nanowire electrode.

In this work, vertically aligned zinc oxide (ZnO) nanorod (NR)-based flexible ultraviolet (UV) photodetectors were successfully fabricated on a polyimide (PI) substrate with a copper (Cu) nanowire (NW) electrode. To enhance the flexibility and sensing properties, the entangled networks of Cu NWs were applied to UV photodetectors as a flexible electrode. Here, Cu NWs have a high conductivity with a low cost compared to other metals to achieve a Schottky contact with ZnO NRs. Moreover, because of forming a network structure, the surface of the sensing material has a large contact area with oxygen molecules, resulting in a faster response time. The Cu NW electrode exhibited a high optical transmittance of 90%, a considerable sheet resistance of 50 Ω sq-1, and a work function of 5.12 eV. Consequentially, the fabricated UV photodetector with Cu NW electrodes showed excellent UV sensing properties with a very fast rising time of 0.7 s and a decay time of 1.9 s in the dark and under UV illumination (365 nm, 0.40 mW cm-2) at a reverse bias of -2.0 V. Furthermore, during the bending test at a radius of curvature of 5 mm, the flexible ZnO NR UV photodetectors with Cu NW electrodes exhibited almost unchanged UV sensing properties even after 5000 cycles.

Adopting Novel Strategies in Achieving High-Performance Single-Layer Network Structured ZnO Nanorods Thin Film Transistors.

High-performance, solution-processed transparent and flexible zinc oxide (ZnO) nanorods (NRs)-based single layer network structured thin film transistors (TFTs) were developed on polyethylene terephthalate (PET) substrate at 100 °C. Keeping the process-temperature under 100 °C, we have improved the device performance by introducing three low temperature-based techniques; regrowing ZnO to fill the void spaces in a single layer network of ZnO NRs, passivating the back channel with polymer, and adopting ZrO2 as the high-k dielectric. Notably, high-k amorphous ZrO2 was synthesized and deposited using a novel method at an unprecedented temperature of 100 °C. Using these methods, the TFTs exhibited a high mobility of 1.77 cm(2)/V·s. An insignificant reduction of 2.18% in mobility value after 3000 cycles of dynamic bending at a radius of curvature of 20 mm indicated the robust mechanical nature of the flexible ZnO NRs SLNS TFTs.

Bi-functional ion exchangers for enhanced performance of dye-sensitized solar cells.

Ion exchange using aerosol OT (AOT) offers dye adsorption twice as fast as known methods. Moreover, it suppresses the dye-agglomeration that may cause insufficient dye-coverage on the photoelectrode surface. Consequently, its dual function of fast dye-loading and higher dye-coverage significantly improves the power conversion efficiency of dye-sensitized solar cells.

Temperature-stable high-energy-density capacitors using complex perovskite thin films.

Chemical-solution-derived thin film synthesis and dielectric characterizations of (1 - x)BaTiO(3-x)Bi(Mg,Ti) O(3) complex perovskites with compositions x <0.15 have been explored for temperature-stable high-energy-density capacitor applications. Solution chemistry has been optimized to synthesize and stabilize the precursor solution. Solution-derived (1 - x)BaTiO(3-x)Bi(Mg,Ti)O(3) thin film samples in thicknesses ranging from 250 to 500 nm were fabricated by repeated spinning and subsequent crystallization processes. These thin films showed nearly linear polarization response with high relative dielectric permittivity exceeding 900, which is beneficial for high-capacitance-density and high-energy-density capacitors. Average dielectric breakdown strengths of the dense films were as high as 2.08 MV/cm. The BaTiO(3)-Bi(Mg,Ti) O3 samples showed very low leakage current densities of the order of 10-8 A/cm(2) even at temperatures of 200°C. Based on the structural stability at high temperatures of the pseudocubic perovskite, the high dielectric permittivity and the typical P-E behaviors of the BaTiO(3)-Bi(Mg,Ti)O(3) thin films were also maintained at such high temperatures. Resulting energy density of the 500-nm-thick 0.88BaTiO(3)-0.12Bi(Mg,Ti) O(3) thin film was as high as 37 J/cm(3) at 1.9 MV/cm. The high energy density and excellent temperature stability of the Ba- TiO(3)-Bi(Mg,Ti)O(3) complex perovskite show promise for use in high-temperature pulse power capacitor applications.