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Magnetic random-access memory (MRAM), which stores information through control of the magnetization direction, offers promising features as a viable nonvolatile memory alternative, including high endurance and successful large-scale commercialization. Recently, MRAM applications have extended beyond traditional memories, finding utility in emerging computing architectures such as in-memory computing and probabilistic bits. In this work, we report highly reliable MRAM-based security devices, known as physical unclonable functions (PUFs), achieved by exploiting nanoscale perpendicular magnetic tunnel junctions (MTJs). By intentionally randomizing the magnetization direction of the antiferromagnetically coupled reference layer of the MTJs, we successfully create an MRAM-PUF. The proposed PUF shows ideal uniformity and uniqueness and, in particular, maintains performance over a wide temperature range from -40 to +150 °C. Moreover, rigorous testing with more than 1584 challenge-response pairs of 64 bits each confirms resilience against machine learning attacks. These results, combined with the merits of commercialized MRAM technology, would facilitate the implementation of MRAM-PUFs.
RESUMO
Physical unclonable function (PUFs) utilize inherent random physical variations of solid-state devices and are a core ingredient of hardware security primitives. PUFs promise more robust information security than that provided by the conventional software-based approaches. While silicon- and memristor-based PUFs are advancing, their reliability and scalability require further improvements. These are currently limited by output fluctuations and associated additional peripherals. Here, highly reliable spintronic PUFs that exploit field-free spin-orbit-torque switching in IrMn/CoFeB/Ta/CoFeB structures are demonstrated. It is shown that the stochastic switching polarity of the perpendicular magnetization of the top CoFeB can be achieved by manipulating the exchange bias directions of the bottom IrMn/CoFeB. This serves as an entropy source for the spintronic PUF, which is characterized by high entropy, uniqueness, reconfigurability, and digital output. Furthermore, the device ensures a zero bit-error-rate under repetitive operations and robustness against external magnetic fields, and offers scalable and energy-efficient device implementations.
RESUMO
A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has been fixed in the paper.
RESUMO
Spin-based electronic devices on polymer substrates have been intensively investigated because of several advantages in terms of weight, thickness, and flexibility, compared to rigid substrates. So far, most studies have focused on maintaining the functionality of devices with minimum degradation against mechanical deformation, as induced by stretching and bending of flexible devices. Here, we applied repetitive bending stress on a flexible magnetic layer and a spin-valve structure composed of Ta/NiFe/CoFe/Cu/Ni/IrMn/Ta on a polyimide (PI) substrate. It is found that the anisotropy can be enhanced or weakened depending upon the magnetostrictive properties under stress. In the flat state after bending, due to residual compressive stress, the magnetic anisotropy of the positive magnetostrictive free layer is weakened while that of the pinned layer with negative magnetostriction is enhanced. Thus, the magnetic configuration of the spin-valve is appropriate for use as a sensor. Through the bending process, we design a prototype magnetic sensor cell array and successfully show a sensing capability by detecting magnetic microbeads. This attempt demonstrates that appropriate control of stress, induced by repetitive bending of flexible magnetic layers, can be effectively used to modify the magnetic configurations for the magnetic sensor.
