Wide-wavelength-tunable distributed Bragg reflector laser diode with high thermal efficiency.

We proposed a thermally-tuned distributed Bragg reflector (DBR) laser diode that has a high tuning efficiency over a wide wavelength tuning range. The laser diode is composed of a gain, a phase control (PC), and a DBR region, and its wavelength is tuned coarsely and finely by the micro-heaters on the DBR and PC regions, respectively. To improve the tuning efficiency, we developed a technique for fabricating a thermal isolation structure through a reverse mesa etching process, replacing the complex process that uses an InGaAs sacrificial layer. The DBR laser diodes (DBR-LD) fabricated using this method effectively confines heat generated by the heater, resulting in an approximate tuning range of 40 nm. This technology, which has achieved nearly four times larger wavelength tuning range than the thermally-tuned DBR-LDs without a thermal isolation structure, is considered suitable for the cost-effective development of wide-wavelength-tuning DBR-LD light sources.

16-channel tunable and 25-Gb/s EAM-integrated DBR-LD for WDM-based mobile front-haul networks.

We report a tunable distributed Bragg reflector-laser diode (DBR-LD) integrated with an electro-absorption-modulator (EAM) at an operating wavelength of 1.3 µm. This LD consists of gain, phase control (PC), DBR, and EAM sections, realized by using a butt-coupling technique in monolithically integrating the multiple quantum wells (MQWs) with the passive core and by applying an etched-mesa buried hetero-structure (EMBH) to the resonance cavity (i.e., gain to DBR section) and a deep-ridge type to the EAM section in fabricating the waveguide structure. Wavelength tuning of the LD is achieved by both applying a voltage to the heater metal of DBR section (coarse tuning) and injecting a current to the ohmic metal of PC section (fine tuning). From the work, the fabricated chips show a threshold current of about 13 mA, a side mode suppression ratio (SMSR) of more than 35 dB, and a tuning range of 15 nm within a heater voltage of 2 V. Dynamic tests for the EAM-integrated LD show the 3 dB bandwidth of more than 20 GHz and clear 25 Gb/s eye openings with a dynamic extinction ratio (DER) of over 7 dB for 16 channels spaced at the wavelength interval of 0.55 nm. Based on these results, we conclude that the EAM-integrated DBR-LD is capable of providing 16 channel operation at a data rate of 25 Gb/s and can be used as an effective light source for WDM-based mobile front-haul networks.

1.3-µm and 10-Gbps tunable DBR-LD for low-cost application of WDM-based mobile front haul networks.

We report a 1.3-µm and 10-Gbps tunable distributed Bragg reflector laser diode (DBR-LD) for the low-cost application of a wavelength division multiplex based mobile front-haul network. The device consists of gain, phase control, and DBR sections, implemented using a butt-coupling method through a monolithic integration and through the introduction of an etched mesa planar buried hetero-structure in a waveguide structure. From the work, a 560-µm long DBR-LD with a 220-µm long micro-heater DBR section has a threshold current of 10 mA ± 1 mA and a tuning range of more than 15 nm within a heater injection current of ∼100 mA. Spectral and dynamic tests for this LD show 16 channels spaced a wavelength grid of 0.8 nm with a side mode suppression ratio of greater 40 dB and clear eye openings with a dynamic extinction ratio of over 5.4 dB at an operating current of 60 mA.

Proposal of novel structure for wide wavelength tuning in distributed Bragg reflector laser diode with single grating mirror.

We report a novel structure that is capable of wide wavelength tuning in the distributed Bragg reflector laser diode (DBR-LD) with a single grating mirror. This device's DBR section has two tuning elements, plasma, and heater tunings, which are implemented simultaneously on the top of a single waveguide by using an in-between dielectric layer. For the proposed structure, a three-dimensional thermal simulation was conducted. The results showed that the temperature profile within the waveguide is highly affected by the position of heater metal and thermal conductivity of the p-cladding layer. As a result, it is important to use a uniform temperature region in the DBR section for a wide tuning range and stable single-mode operation. For a 550-µm long DBR-LD with a 250-µm long DBR section, a tuning range of 26 nm (i.e., 7 nm for plasma tuning and 19 nm for heater tuning); an SMSR of more than 45 dB; and a peak power variation of less than ± 2.5 dB were obtained. From the comparisons of two DBR-LDs with only one tuning element, we confirmed that using the dielectric layer is a very effective way of achieving a wide tuning under the independent tuning operation.

Design and performance of 10-Gb/s L-band REAM-SOA for OLT Transmitter in next generation access networks.

We present a 10-Gb/s L-band reflective electro-absorption modulator integrated with a semiconductor optical amplifier (REAM-SOA) having improved transmission performance at very low input power of seed light. To decrease the input power of seed light, the absorption characteristics of the REAM are adjusted to reduce the amplified spontaneous emission light returned into the SOA, suppressing the gain saturation effect of the SOA. At a considerably low input power of -16 dBm, the REAM-SOA exhibits a low transmission penalty of about 1.2 dB after 50-km SMF transmission. Over a wide input power range from -16 dBm to 5 dBm, a penalty of less than 1.6 dB is achieved at 50-km transmission.

Simple technique for evaluating dimensional and compositional changes in selective-area-grown MQW laser diode.

We report on a novel combination of measurement techniques for evaluating dimensional and compositional changes of selective-area-grown multiple-quantum-well laser diodes (SAG MQW LDs). This technique is based on C-V and I-V measurements of the fully fabricated LDs. Using this technique, the changes in the capacitance and voltage correspond to the layer thickness and bandgap energy. To verify the effectiveness of the proposed technique, we first fabricated an LD array containing ten different SAG MQW structures, and examined the effects of the dimensional and compositional changes on the wavelength shift both theoretically and experimentally. From our examination, we found that a wavelength shift of 83 nm is obtained for an SAG mask pattern with an opening width of 100 µm, and that a cross point between both dimensional and compositional changes exists for this mask pattern. As the following step, the fabricated LD array was tested using the proposed technique, and the growth rate enhancement and bandgap energy were extracted from the measured C-V and I-V results. The extracted data for each array channel were compared with the simulation results, which were well-fitted from the photo-luminescence (PL) measurements. They both show good agreement with the simulation results.

A 10 × 10 Gb/s DFB laser diode array fabricated using a SAG technique.

We present a ten-channel distributed feedback laser diode array (DFB-LDA) developed for the transmission of 100-Gb/s (10 × 10 Gb/s) signals separated by an 8 nm wavelength grid at a center wavelength of 1.55 µm. For the fabrication of this type of laser array, a selective area growth (SAG) technique, electron-beam lithography, and a reverse-mesa ridge waveguide LD processing technique were adopted to offer a tailored gain spectrum to each channel, providing both accurate lasing-wavelength control and excellent single-mode yield over all channels, and reducing the fabrication cost and electrical and thermal resistances. To evaluate the operational performance of the fabricated chip systematically, we also developed a sub-assembly module containing a ten-channel λ/4-shifted DFB-LDA, ten matching resistors, flexible printed circuit board (FPCB) wiring, and a thermistor on a metal optical bench. The static and dynamic properties of all channels of the fabricated array are examined in this paper. The developed sub-assembly module shows a side-mode suppression ratio (SMSR) of > 50 dB, a modulation bandwidth of > 10 GHz, and a clear eye-opening before and after a 2-km transmission with dynamic extinction ratio of > 5 dB.

A cost-effective 25-Gb/s EML TOSA using all-in-one FPCB wiring and metal optical bench.

We present a cost-effective 25-Gb/s electro-absorption modulator integrated laser (EML) transmitter optical sub-assembly (TOSA) using all-in-one flexible printed circuit board (FPCB) wiring and a metal optical bench (MOB). For a low cost and high bandwidth TOSA, internal and external wirings and feed-through of the TOSA to transmit radio-frequency (RF) signal are configured all-in-one using the FPCB. The FPCB is extended from an exterior of the TOSA package up to an EML chip inside the package through the slit formed on a rear sidewall of the package and die-bonded on the MOB. The EML TOSA shows a modulated output power of more than 3.5 dBm and a clear eye pattern with a dynamic extinction ratio of ~8.4 dB at a data rate of 25.78 Gb/s.

Improvement of modulation bandwidth in electroabsorption-modulated laser by utilizing the resonance property in bonding wire.

We present and demonstrate a simple and cost-effective technique for improving the modulation bandwidth of electroabsorption-modulated laser (EML). This technique utilizes the RF resonance caused by the EML chip (i.e., junction capacitance) and bonding wire (i.e, wire inductance). We analyze the effects of the lengths of the bonding wires on the frequency responses of EML by using an equivalent circuit model. To verify this analysis, we package a lumped EML chip on the sub-mount and measure its frequency responses. The results show that, by using the proposed technique, we can increase the modulation bandwidth of EML from ~16 GHz to ~28 GHz.

The effect of gain medium length on dynamic mode stability in semiconductor lasers with a long intra-cavity filter.

We investigate theoretically and experimentally the effect of the physical length of gain medium on dynamic mode stability in semiconductor lasers with an intra-cavity filter. In simulation, two types of analysis models were used to examine the lasing properties and to analyze the dynamic mode stability of the external-cavity system, respectively. In experiment, two different kinds of the structures were fabricated and their spectra were analyzed. Both simulation and measurement results show clearly the length of the gain medium has a critical influence on the stability around the peak wavelength of the filter.

Asymmetric multiple-quantum-well laser diodes with wide and flat gain.

Asymmetric multiple-quantum-well laser diodes with wide and flat gain spectra were designed, fabricated, and analyzed. The active layer was composed of three 10-nm, one 8-nm, and two 6-nm 0.5% compressive strained wells and four 10-nm and one 5-nm 0.4% tensile strained barrier layer. Measured spectra of antireflection-coated ridge waveguide laser diodes with such quantum-well structures have shown that -1-dB spectral gain bandwidth can be as large as 90 nm.