Strong Electron-Phonon Interaction in 2D Vertical Homovalent III-V Singularities.

Highly polar materials are usually preferred over weakly polar ones to study strong electron-phonon interactions and its fascinating properties. Here, we report on the achievement of simultaneous confinement of charge carriers and phonons at the vicinity of a 2D vertical homovalent singularity (antiphase boundary, APB) in an (In,Ga)P/SiGe/Si sample. The impact of the electron-phonon interaction on the photoluminescence processes is then clarified by combining transmission electron microscopy, X-ray diffraction, ab initio calculations, Raman spectroscopy, and photoluminescence experiments. 2D localization and layer group symmetry properties of homovalent electronic states and phonons are studied by first-principles methods, leading to the prediction of a type-II band alignment between the APB and the surrounding semiconductor matrix. A Huang-Rhys factor of 8 is finally experimentally determined for the APB emission line, underlining that a large and unusually strong electron-phonon coupling can be achieved by 2D vertical quantum confinement in an undoped III-V semiconductor. This work extends the concept of an electron-phonon interaction to 2D vertically buried III-V homovalent nano-objects and therefore provides different approaches for material designs, vertical carrier transport, heterostructure design on silicon, and device applications with weakly polar semiconductors.

Loss assessment in random crystal polarity gallium phosphide microdisks grown on silicon.

III-V semiconductors grown on silicon recently appeared as a promising platform to decrease the cost of photonic components and circuits. For nonlinear optics, specific features of the III-V crystal arising from the growth on the nonpolar Si substrate and called antiphase domains (APDs) offer a unique way to engineer the second-order properties of the semiconductor compound. Here we demonstrate the fabrication of microdisk resonators at the interface between a gallium-phosphide layer and its silicon substrate. The analysis of the whispering gallery mode quality factors in the devices allows the quantitative assessment of losses induced by a controlled distribution of APDs in the GaP layer and demonstrates the relevance of such a platform for the development of polarity-engineered III-V nonlinear photonic devices on silicon.

Elastic Constants, Optical Phonons, and Molecular Relaxations in the High Temperature Plastic Phase of the CH3NH3PbBr3 Hybrid Perovskite.

Low frequency dynamics has been studied in a CH3NH3PbBr3 hybrid perovskite single crystal by using four different spectroscopy techniques: coherent inelastic neutron, Raman and Brillouin scatterings, and ultrasound measurements. Sound velocities were measured over five decades in energy to yield the complete set of elastic constants in a hybrid halide perovskite crystal in the pseudocubic plastic phase. The C44 shear elastic constant is very small, leading to a particularly low resistance to shear stress. Brillouin scattering has been used to study the relaxation dynamics of methylammonium cations and to evidence translation-rotation coupling associated with the cubic to tetragonal phase transition at Tc ≈ 230 K. Low frequency and highly damped optical phonons observed using both Raman and inelastic neutron below 18 meV, do not present softening close to Tc. The critical dynamics at Tc ≈ 230 K is compatible with an order-disorder character, dominated by relaxational motions of the molecules.

Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III-V photonics platform on silicon using a laboratory X-ray diffraction setup.

This study is carried out in the context of III-V semiconductor monolithic integration on silicon for optoelectronic device applications. X-ray diffraction is combined with atomic force microscopy and scanning transmission electron microscopy for structural characterization of GaP nanolayers grown on Si. GaP has been chosen as the interfacial layer, owing to its low lattice mismatch with Si. But, microtwins and antiphase boundaries are still difficult to avoid in this system. Absolute quantification of the microtwin volume fraction is used for optimization of the growth procedure in order to eliminate these defects. Lateral correlation lengths associated with mean antiphase boundary distances are then evaluated. Finally, optimized growth conditions lead to the annihilation of antiphase domains within the first 10 nm.