Switching of a large anomalous Hall effect between metamagnetic phases of a non-collinear antiferromagnet.

The anomalous Hall effect (AHE), which in long-range ordered ferromagnets appears as a voltage transverse to the current and usually is proportional to the magnetization, often is believed to be of negligible size in antiferromagnets due to their low uniform magnetization. However, recent experiments and theory have demonstrated that certain antiferromagnets with a non-collinear arrangement of magnetic moments exhibit a sizeable spontaneous AHE at zero field due to a non-vanishing Berry curvature arising from the quantum mechanical phase of the electron's wave functions. Here we show that antiferromagnetic Mn5Si3 single crystals exibit a large AHE which is strongly anisotropic and shows multiple transitions with sign changes at different magnetic fields due to field-induced rearrangements of the magnetic structure despite only tiny variations of the total magnetization. The presence of multiple non-collinear magnetic phases offers the unique possiblity to explore the details of the AHE and the sensitivity of the Hall effect on the details of the magnetic texture.

Strain-Driven Approach to Quantum Criticality in AFe_{2}As_{2} with A=K, Rb, and Cs.

The iron-based superconductors AFe_{2}As_{2} with A=K, Rb, Cs exhibit large Sommerfeld coefficients approaching those of heavy-fermion systems. We have investigated the magnetostriction and thermal expansion of this series to shed light on this unusual behavior. Quantum oscillations of the magnetostriction allow identifying the band-specific quasiparticle masses which by far exceed the band-structure derived masses. The divergence of the Grüneisen ratio derived from thermal expansion indicates that with increasing volume along the series a quantum critical point is approached. The critical fluctuations responsible for the enhancement of the quasiparticle masses appear to weaken the superconducting state.

Large topological Hall effect in the non-collinear phase of an antiferromagnet.

Non-trivial spin arrangements in magnetic materials give rise to the topological Hall effect observed in compounds with a non-centrosymmetric cubic structure hosting a skyrmion lattice, in double-exchange ferromagnets and magnetically frustrated systems. The topological Hall effect has been proposed to appear also in presence of non-coplanar spin configurations and thus might occur in an antiferromagnetic material with a highly non-collinear and non-coplanar spin structure. Particularly interesting is a material where the non-collinearity develops not immediately at the onset of antiferromagnetic order but deep in the antiferromagnetic phase. This unusual situation arises in non-cubic antiferromagnetic Mn5Si3. Here we show that a large topological Hall effect develops well below the Néel temperature as soon as the spin arrangement changes from collinear to non-collinear with decreasing temperature. We further demonstrate that the effect is not observed when the material is turned ferromagnetic by carbon doping without changing its crystal structure.

Isolated facial and meridional tris(bipyridine)Ru(II) for STM studies on Au(111).

Tripodal facial and meridional Ru(II) complexes comprising three conjugated legs with acetyl-protected thiol end groups are designed, synthesized and isolated for investigation on a gold surface. Preliminary ultrahigh vacuum scanning tunnelling microscopy (UHV STM) measurements of a monolayer of facial isomer deposited on Au(111) are presented.

Light-matter interaction in a microcavity-controlled graphene transistor.

Graphene has extraordinary electronic and optical properties and holds great promise for applications in photonics and optoelectronics. Demonstrations including high-speed photodetectors, optical modulators, plasmonic devices, and ultrafast lasers have now been reported. More advanced device concepts would involve photonic elements such as cavities to control light-matter interaction in graphene. Here we report the first monolithic integration of a graphene transistor and a planar, optical microcavity. We find that the microcavity-induced optical confinement controls the efficiency and spectral selection of photocurrent generation in the integrated graphene device. A twenty-fold enhancement of photocurrent is demonstrated. The optical cavity also determines the spectral properties of the electrically excited thermal radiation of graphene. Most interestingly, we find that the cavity confinement modifies the electrical transport characteristics of the integrated graphene transistor. Our experimental approach opens up a route towards cavity-quantum electrodynamics on the nanometre scale with graphene as a current-carrying intra-cavity medium of atomic thickness.

STM-induced surface aggregates on metals and oxidized silicon.

We have observed an aggregation of carbon or carbon derivatives on platinum and natively oxidized silicon surfaces during STM measurements in ultra-high vacuum on solvent-cleaned samples previously structured by e-beam lithography. We imaged the aggregated layer with scanning tunneling microscopy (STM) as well as scanning electron microscopy (SEM). The amount of the aggregated material increases with the number of STM scans and with the tunneling voltage. Film thicknesses of up to 10 nm with five successive STM measurements of the same area have been obtained.

Electroluminescence from a single nanotube-molecule-nanotube junction.

The positioning of single molecules between nanoscale electrodes has allowed their use as functional units in electronic devices. Although the electrical transport in such devices has been widely explored, optical measurements have been restricted to the observation of electroluminescence from nanocrystals and nanoclusters and from molecules in a scanning tunnelling microscope setup. In this Letter, we report the observation of electroluminescence from the core of a rod-like molecule between two metallic single-walled carbon nanotube electrodes forming a rigid solid-state device. We also develop a simple model to explain the onset voltage for electroluminescence. These results suggest new characterization and functional possibilities, and demonstrate the potential of carbon nanotubes for use in molecular electronics.

Influence of structural and dielectric anisotropy on the dielectrophoresis of single-walled carbon nanotubes.

We report on a carbon nanotube network which is composed of aligned metallic and randomly oriented semiconducting single-walled carbon nanotubes. The material is formed by using a novel radio frequency dielectrophoresis setup, which generates very large dielectrophoretic force fields and allows dielectrophoretic assembling of nanotube films up to 100 nm thickness. Polarization dependent absorption measurements provide experimental evidence for the electronic type specific alignment behavior. We explain the experimental data with an advanced model for nanotube dielectrophoresis, which explicitly takes into account both the longitudinal and transversal polarizability. On the basis of this model, we calculate the dielectrophoretic force fields and show that semiconducting nanotubes deposit under very large fields due to their transversal polarizability even for high field frequencies.

On the electron-phonon coupling of individual single-walled carbon nanotubes.

We show that the phonon coupling to the electronic system in individual metallic single-walled carbon nanotubes is not due to coupling to low-energy plasmons. The evidence stems from the measured Raman-Stokes G-mode, which for metallic and semiconducting tubes could be fitted well by the superposition of only two Lorentzian lines associated with vibrational modes along the nanotube axis and the nanotube circumference. In the case of metallic tubes the lower-energy G mode is significantly broadened, however maintaining the Lorentzian line shape, in contrast to the theoretically expected asymmetric Breit-Wigner-Fano line shape from phonon-plasmon coupling. The results were obtained by studying 25 individual metallic and semiconducting single-walled carbon nanotubes with atomic force microscopy, electron transport measurements, and resonant Raman spectroscopy.

Frequency dependence of the dielectrophoretic separation of single-walled carbon nanotubes.

Dielectrophoresis on single-walled carbon nanotubes in surfactant suspensions has been demonstrated to separate metallic from semiconducting tubes by their different electric field-induced polarisabilities. Here we report that the interaction between SWNTs and the surfactant induces a nanotube surface conductance which gives rise to a unique electric field frequency dependence of the dielectrophoretic force acting on semiconducting SWNTs. We observe a surfactant concentration dependent crossover frequency enabling separation of metallic from semiconducting SWNTs at high frequency and deposition of metallic and semiconducting SWNTs at low frequency. Proof for the effectiveness of separation is given by a comparative Raman spectroscopy study on dielectrophoretically deposited tubes excited with two different wavelengths.

Separation of metallic from semiconducting single-walled carbon nanotubes.

We have developed a method to separate metallic from semiconducting single-walled carbon nanotubes from suspension using alternating current dielectrophoresis. Our method takes advantage of the difference of the relative dielectric constants of the two species with respect to the solvent, resulting in an opposite movement of metallic and semiconducting tubes along the electric field gradient. Metallic tubes are attracted toward a microelectrode array, leaving semiconducting tubes in the solvent. Proof of the effectiveness of separation is given by a comparative Raman spectroscopy study on the dielectrophoretically deposited tubes and on a reference sample.