RESUMO
A set of semiconductor lasers with different stripe widths is fabricated based on the AlGaInAs/InP heterostructure with an ultra-narrow waveguide. The key characteristics of the lasers (light-current curves (L-I), current-voltage curves (I-V), and spectral and spatial characteristics) are measured, and their dependence on the stripe width is shown. The operating optical power increases from 1.4 W to 4.3 W; however, the lateral brightness decreases from 1.09 W/(mm*mrad) to 0.65 W/(mm*mrad) as the stripe width increases from 20 to 150 µm.
RESUMO
In this work, we demonstrate the features of a two-stage epitaxial growth technique and show the results of power and efficiency measurements for three different designs of quantum cascade lasers with a record-high peak power in the 8 µm spectral region. The time-resolved QCL spectral study proves that InP-based upper cladding paired with an InP contact layer provides better heat dissipation and allows one to reach better power characteristics in comparison with InGaAs-based contact, even with short pulse pumping.