Band offsets in YSZ/InGaZnO4 heterostructure system.

The energy discontinuity in the valence band (deltaE(v)) of Y2O3-stabilized ZrO2 (YSZ)/InGaZnO4 (IGZO) heterostructures was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The YSZ exhibited a bandgap of 4.4 eV from absorption measurements. A value of deltaE(v) = 0.57 +/- 0.12 eV was obtained by using Ga 2P3/2, Zn 2p3/2 and In 3d5/2 energy levels as references. This implies a conduction band offset (deltaE(c)) of 0.63 eV in YSZ/InGaZnO4 heterostructures and a nested interface band alignment.