RESUMO
The interaction of a propagating crack in implanted silicon with self-emitted acoustic waves results in periodic patterns on fractured surfaces. Direct measurement of the acoustic emission ahead of the fracture front shows the emergence of dominant acoustic frequency related to the crack velocity. It is shown that the surface modifications are made of roughness modulations due to periodic deviations of the crack front. A physical mechanism explaining the pattern formation is proposed, well in agreement with the observed pattern wavelengths.
RESUMO
In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial reduced pressure-chemical vapour deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometre-sized templates for the epitaxy of Si and SiGe nano-pillars. Results showed highly selective and uniform processes for the epitaxial growth of Si and SiGe nano-pillars. 200 nm thick SiGe layers were grown on Si and SiGe nano-pillars and characterised by atomic force microscopy, x-ray diffraction and transmission electron microscopy. Smooth SiGe surfaces and full strain relaxation were obtained in the 650 °C-700 °C range for 2D SiGe layers grown either on Si or SiGe nano-pillars.
