Triiodide Formation Governs Oxidation Mechanism of Tin-Lead Perovskite Solar Cells via A-Site Choice.

Mixed tin-lead (Sn-Pb) halide perovskites stand out as promising materials for next-generation photovoltaics and near-infrared optoelectronics. However, their sensitivity to oxidative degradation remains a major hurdle toward their widespread deployment. A holistic understanding of their oxidation processes considering all their constituent ions is therefore essential to stabilize these materials. Herein, we reveal that A-site cation choice plays an inconspicuous yet crucial role in determining Sn-Pb perovskite stability toward oxidation. Comparing typical A-site compositions, we show that thin films and solar cells containing cesium are more resistant to oxidative stress relative to their methylammonium analogs. We identify degradation in these compositions to be closely linked to the presence of triiodide, a harmful species evolving from native I2 oxidants. We find that hydrogen bonding between methylammonium and I2 promotes triiodide formation, while the strong polarizing character of cesium limits this process by capturing I2. Inspired from these findings, we design two strategies to boost stability of sensitive methylammonium-based Sn-Pb perovskite films and devices against oxidation. Specifically, we modulate the polarizing character of surface A-sites in perovskite via CsI and RbI coatings, and we incorporate Na2S2O3 as an I2 scavenging additive. These crucial mechanistic insights will pave the way for the design of highly efficient and stable Sn-Pb perovskite optoelectronics.

Engineering Stable Lead-Free Tin Halide Perovskite Solar Cells: Lessons from Materials Chemistry.

Substituting toxic lead with tin (Sn) in perovskite solar cells (PSCs) is the most promising route toward the development of high-efficiency lead-free devices. Despite the encouraging efficiencies of Sn-PSCs, they are still yet to surpass 15% and suffer detrimental oxidation of Sn(II) to Sn(IV). Since their first application in 2014, investigations into the properties of Sn-PSCs have contributed to a growing understanding of the mechanisms, both detrimental and complementary to their stability. This review summarizes the evolution of Sn-PSCs, including early developments to the latest state-of-the-art approaches benefitting the stability of devices. The degradation pathways associated with Sn-PSCs are first outlined, followed by describing how composition engineering (A, B site modifications), additive engineering (oxidation prevention), and interface engineering (passivation strategies) can be employed as different avenues to improve the stability of devices. The knowledge about these properties is also not limited to PSCs and also applicable to other types of devices now employing Sn-based perovskite absorber layers. A detailed analysis of the properties and materials chemistry reveals a clear set of design rules for the development of stable Sn-PSCs. Applying the design strategies highlighted in this review will be essential to further improve both the efficiency and stability of Sn-PSCs.

Halide Chemistry in Tin Perovskite Optoelectronics: Bottlenecks and Opportunities.

Tin halide perovskites (Sn HaPs) are the top lead-free choice for perovskite optoelectronics, but the oxidation of perovskite Sn2+ to Sn4+ remains a key challenge. However, the role of inconspicuous chemical processes remains underexplored. Specifically, the halide component in Sn HaPs (typically iodide) has been shown to play a key role in dictating device performance and stability due to its high reactivity. Here we describe the impact of native halide chemistry on Sn HaPs. Specifically, molecular halogen formation in Sn HaPs and its influence on degradation is reviewed, emphasising the benefits of iodide substitution for improving stability. Next, the ecological impact of halide products of Sn HaP degradation and its mitigation are considered. The development of visible Sn HaP emitters via halide tuning is also summarised. Lastly, halide defect management and interfacial engineering for Sn HaP devices are discussed. These insights will inspire efficient and robust Sn HaP optoelectronics.

Phosphorene Nanoribbon-Augmented Optoelectronics for Enhanced Hole Extraction.

Phosphorene nanoribbons (PNRs) have been widely predicted to exhibit a range of superlative functional properties; however, because they have only recently been isolated, these properties are yet to be shown to translate to improved performance in any application. PNRs show particular promise for optoelectronics, given their predicted high exciton binding energies, tunable bandgaps, and ultrahigh hole mobilities. Here, we verify the theorized enhanced hole mobility in both solar cells and space-charge-limited-current devices, demonstrating the potential for PNRs improving hole extraction in universal optoelectronic applications. Specifically, PNRs are demonstrated to act as an effective charge-selective interlayer by enhancing hole extraction from polycrystalline methylammonium lead iodide (MAPbI3) perovskite to the poly(triarylamine) semiconductor. Introducing PNRs at the hole-transport/MAPbI3 interface achieves fill factors above 0.83 and efficiencies exceeding 21% for planar p-i-n (inverted) perovskite solar cells (PSCs). Such efficiencies are typically only reported for single-crystalline MAPbI3-based inverted PSCs. Methylammonium-free PSCs also benefit from a PNR interlayer, verifying applicability to architectures incorporating mixed perovskite absorber layers. Device photoluminescence and transient absorption spectroscopy are used to demonstrate that the presence of the PNRs drives more effective carrier extraction. Isolation of the PNRs in space-charge-limited-current hole-only devices improves both hole mobility and conductivity, demonstrating applicability beyond PSCs. This work provides primary experimental evidence that the predicted superlative functional properties of PNRs indeed translate to improved optoelectronic performance.

Lewis Base Passivation Mediates Charge Transfer at Perovskite Heterojunctions.

Understanding interfacial charge transfer processes such as trap-mediated recombination and injection into charge transport layers (CTLs) is crucial for the improvement of perovskite solar cells. Herein, we reveal that the chemical binding of charge transport layers to CH3NH3PbI3 defect sites is an integral part of the interfacial charge injection mechanism in both n-i-p and p-i-n architectures. Specifically, we use a mixture of optical and X-ray photoelectron spectroscopy to show that binding interactions occur via Lewis base interactions between electron-donating moieties on hole transport layers and the CH3NH3PbI3 surface. We then correlate the extent of binding with an improvement in the yield and longer lifetime of injected holes with transient absorption spectroscopy. Our results show that passivation-mediated charge transfer has been occurring undetected in some of the most common perovskite configurations and elucidate a key design rule for the chemical structure of next-generation CTLs.

Degradation mechanism of hybrid tin-based perovskite solar cells and the critical role of tin (IV) iodide.

Tin perovskites have emerged as promising alternatives to toxic lead perovskites in next-generation photovoltaics, but their poor environmental stability remains an obstacle towards more competitive performances. Therefore, a full understanding of their decomposition processes is needed to address these stability issues. Herein, we elucidate the degradation mechanism of 2D/3D tin perovskite films based on (PEA)0.2(FA)0.8SnI3 (where PEA is phenylethylammonium and FA is formamidinium). We show that SnI4, a product of the oxygen-induced degradation of tin perovskite, quickly evolves into iodine via the combined action of moisture and oxygen. We identify iodine as a highly aggressive species that can further oxidise the perovskite to more SnI4, establishing a cyclic degradation mechanism. Perovskite stability is then observed to strongly depend on the hole transport layer chosen as the substrate, which is exploited to tackle film degradation. These key insights will enable the future design and optimisation of stable tin-based perovskite optoelectronics.

Ultrathin polymethylmethacrylate interlayers boost performance of hybrid tin halide perovskite solar cells.

Introducing a polymethylmethacrylate (PMMA) layer at the (PEA)0.2(FA)0.8SnI3 perovskite/hole transport layer interface leads to a remarkable improvement in the photogenerated current density and fill factor, resulting in an increase in the power conversion efficiency from 6.5% to 10%. PMMA is proposed to mitigate interfacial charge losses and to induce a more favourable distribution of 2D perovskite phases, elucidating a pathway towards the development of high-performance tin-based perovskite solar cells.

Stability of Lead and Tin Halide Perovskites: The Link between Defects and Degradation.

The field of photovoltaic research has been lately dominated by the rapid evolution of low-cost and high-efficiency hybrid organic lead halide perovskite solar cells. Despite the considerable progress made in the efficiency of such devices, the achievement of long-term material and device stability remains a challenge. In this Perspective, insights into the role structural defects play in the stability of these perovskite absorbers are examined, highlighting the critical importance of vacancy type defects as the initiation sites for moisture-, oxygen-, and light-induced degradation and the approaches that are emerging to help overcome these issues. In the second part of the Perspective we consider the stability of tin-based perovskites. Here, the Sn4+ defects that arise upon material degradation are described along with the strategies being developed to enhance stability and decrease their formation. Finally, the discussion is extended to innately more stable layered tin-based perovskites, identifying them as a route to the development of efficient lead-free perovskite solar cells.