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1.
Photoelectron diffraction imaging for C2H2 and C2H4 chemisorbed on Si(100) reveals a new bonding configuration
Xu SH; Keeffe M; Yang Y; Chen C; Yu M; Lapeyre GJ; Rotenberg E; Denlinger J; Yates JT.
Phys Rev Lett ; 84(5): 939-42, 2000 Jan 31.
Artigo em Inglês | MEDLINE | ID: mdl-11017410

RESUMO

A new adsorption site for adsorbed acetylene on Si(100) is observed by photoelectron imaging based on the holographic principle. The diffraction effects in the carbon 1s angle-resolved photoemission are inverted (including the small-cone method) to obtain an image of the atom's neighboring carbon. The chemisorbed acetylene molecule is bonded to four silicon surface atoms. In contrast to the C2H2 case, the image for adsorbed C2H4 shows it bonded to two Si surface atoms.

2.
Silicon spreading in delta -doped GaAs(100): A high-resolution electron-energy-loss-spectroscopy study.
Polyakov VM; Elbe A; Wu J; Lapeyre GJ; Schaefer JA.
Phys Rev B Condens Matter ; 54(3): 2010-2018, 1996 Jul 15.
Artigo em Inglês | MEDLINE | ID: mdl-9986052
3.
Direct observation of the double Auger decay of a K hole.
Hindi MM; Zhu L; Avci R; Miocinovic PM; Kozub RL; Lapeyre GJ.
Phys Rev A ; 53(6): R3716-R3719, 1996 Jun.
Artigo em Inglês | MEDLINE | ID: mdl-9913450
4.
Small-cone method of directly forming atomic images from energy-dependent photoelectron-diffraction data.
Wu H; Lapeyre GJ.
Phys Rev B Condens Matter ; 51(20): 14549-14553, 1995 May 15.
Artigo em Inglês | MEDLINE | ID: mdl-9978387
5.
Monatomic steps on the InAs(110) surface.
Liang Y; Packard WE; Dow JD; Ho H; Lapeyre GJ.
Phys Rev B Condens Matter ; 48(16): 11942-11945, 1993 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-10007537
6.
Photoemission observation of Na-induced states in the band gap and evidence for charge transfer in Na/GaP(110).
Evans DA; Lapeyre GJ; Horn K.
Phys Rev B Condens Matter ; 48(3): 1939-1942, 1993 Jul 15.
Artigo em Inglês | MEDLINE | ID: mdl-10008567
7.
New experimental technique for determining real-space atomic images applied to aluminum adsorbed on silicon (111).
Wu H; Lapeyre GJ; Huang H; Tong SY.
Phys Rev Lett ; 71(2): 251-254, 1993 Jul 12.
Artigo em Inglês | MEDLINE | ID: mdl-10054902
8.
Band-bending model for the ideal Bi/InP(110) interface.
Meng Y; Joyce JJ; Tang M; Anderson J; Lapeyre GJ.
Phys Rev B Condens Matter ; 46(19): 12818-12821, 1992 Nov 15.
Artigo em Inglês | MEDLINE | ID: mdl-10003217
9.
Temperature dependence of high-resolution electron-energy-loss spectroscopy of the hole plasmon at heavily doped p-type GaAs(110) surfaces.
Meng Y; Lapeyre GJ.
Phys Rev B Condens Matter ; 45(3): 1500-1503, 1992 Jan 15.
Artigo em Inglês | MEDLINE | ID: mdl-10001642
10.
Observation and low-energy-electron-diffraction structure analysis of the Ge(111)-( sqrt 3 x sqrt 3 )R30 degrees-Bi system.
Wan KJ; Ford WK; Lapeyre GJ; Hermanson JC.
Phys Rev B Condens Matter ; 44(12): 6500-6503, 1991 Sep 15.
Artigo em Inglês | MEDLINE | ID: mdl-9998514
11.
Hole plasmon excitations on a p-type GaAs(110) surface.
Meng Y; Anderson JR; Hermanson JC; Lapeyre GJ.
Phys Rev B Condens Matter ; 44(8): 4040-4043, 1991 Aug 15.
Artigo em Inglês | MEDLINE | ID: mdl-10000044
12.
Angle-resolved photoemission investigation of the (2 x 1) carbidic carbon on Ni(110).
Papagno L; Conti M; Caputi LS; Anderson J; Lapeyre GJ.
Phys Rev B Condens Matter ; 44(4): 1904-1909, 1991 Jul 15.
Artigo em Inglês | MEDLINE | ID: mdl-9999730
13.
Inelastic-electron-scattering investigation of clean and hydrogen-exposed InP(110) surfaces.
Nannarone S; D'Addato S; Betti MG; del Pennino U; Chen Y; Samonto P; Lapeyre GJ.
Phys Rev B Condens Matter ; 43(12): 9818-9822, 1991 Apr 15.
Artigo em Inglês | MEDLINE | ID: mdl-9996683
14.
Low-energy excitations in Cu-O-based superconductors with electron-energy-loss spectroscopy.
Kelly MK; Meng Y; Hwu Y; Chang Y; Chen Y; Lapeyre GJ; Margaritondo G.
Phys Rev B Condens Matter ; 40(16): 11309-11312, 1989 Dec 01.
Artigo em Inglês | MEDLINE | ID: mdl-9991702
15.
Growth morphology and electronic structure of the Bi/GaAs(110) interface.
Joyce JJ; Anderson J; Nelson MM; Lapeyre GJ.
Phys Rev B Condens Matter ; 40(15): 10412-10419, 1989 Nov 15.
Artigo em Inglês | MEDLINE | ID: mdl-9991587
16.
Inelastic scattering of electrons from accumulation and inversion layers.
Persson BN; Ping JG; Xu YB; Frankel D; Chen Y; Lapeyre GJ.
Phys Rev B Condens Matter ; 40(11): 7819-7824, 1989 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-9991209
17.
Comparative study of water adsorption on Ge(100)-(2 x 1) and GexSi1-x(100)-(2 x 1) by high-resolution electron-energy-loss spectroscopy.
Papagno L; Caputi LS; Anderson J; Lapeyre GJ.
Phys Rev B Condens Matter ; 40(12): 8443-8445, 1989 Oct 15.
Artigo em Inglês | MEDLINE | ID: mdl-9991308
18.
Coupled plasmon and phonon in the accumulation layer of InAs(110) cleaved surfaces.
Chen Y; Hermanson JC; Lapeyre GJ.
Phys Rev B Condens Matter ; 39(17): 12682-12687, 1989 Jun 15.
Artigo em Inglês | MEDLINE | ID: mdl-9948137
19.
Coupled plasmon and phonon excitations in the space-charge layer on GaAs(110) surfaces.
Chen Y; Nannarone S; Schaefer J; Hermanson JC; Lapeyre GJ.
Phys Rev B Condens Matter ; 39(11): 7653-7658, 1989 Apr 15.
Artigo em Inglês | MEDLINE | ID: mdl-9947446
20.
Anisotropy of the electronic structures of the GaP(110) surface: A high-resolution electron-energy-loss spectroscopy study.
Nannarone S; D'Addato S; Schaefer JA; Chen Y; Lapeyre GJ.
Phys Rev B Condens Matter ; 39(9): 5975-5979, 1989 Mar 15.
Artigo em Inglês | MEDLINE | ID: mdl-9949019
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