Detection of Ultralow Concentration NO2 in Complex Environment Using Epitaxial Graphene Sensors.

We demonstrate proof-of-concept graphene sensors for environmental monitoring of ultralow concentration NO2 in complex environments. Robust detection in a wide range of NO2 concentrations, 10-154 ppb, was achieved, highlighting the great potential for graphene-based NO2 sensors, with applications in environmental pollution monitoring, portable monitors, automotive and mobile sensors for a global real-time monitoring network. The measurements were performed in a complex environment, combining NO2/synthetic air/water vapor, traces of other contaminants, and variable temperature in an attempt to fully replicate the environmental conditions of a working sensor. It is shown that the performance of the graphene-based sensor can be affected by coadsorption of NO2 and water on the surface at low temperatures (≤70 °C). However, the sensitivity to NO2 increases significantly when the sensor operates at 150 °C and the cross-selectivity to water, sulfur dioxide, and carbon monoxide is minimized. Additionally, it is demonstrated that single-layer graphene exhibits two times higher carrier concentration response upon exposure to NO2 than bilayer graphene.

Visualisation of edge effects in side-gated graphene nanodevices.

Using local scanning electrical techniques we study edge effects in side-gated Hall bar nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of ~60-125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination is minimal. We also show that the electronic properties at the edges can be precisely tuned from hole to electron conduction by using moderate strength electrical fields created by side-gates. However, the central part of the channel remains relatively unaffected by the side-gates and retains the bulk properties of graphene.

Quantum Hall effect and quantum point contact in bilayer-patched epitaxial graphene.

We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.

Express optical analysis of epitaxial graphene on SiC: impact of morphology on quantum transport.

We show that inspection with an optical microscope allows surprisingly simple and accurate identification of single and multilayer graphene domains in epitaxial graphene on silicon carbide (SiC/G) and is informative about nanoscopic details of the SiC topography, making it ideal for rapid and noninvasive quality control of as-grown SiC/G. As an illustration of the power of the method, we apply it to demonstrate the correlations between graphene morphology and its electronic properties by quantum magneto-transport.