Effect of annealing temperature and capping ligands on the electron mobility and electronic structure of indium oxide nanocrystal thin films: a comparative study with oleic acid, benzoic acid, and 4-aminobenzoic acid.

The effect of annealing temperature and capping ligands on the electron mobility and electronic structure of indium oxide (In2O3) nanocrystals (NCs) was investigated using oleic acid (OA), benzoic acid (BA), and 4-aminobenzoic acid (4ABA). The NCs were deposited on SiO2/Si wafers for electron mobility measurements using a field effect transistor device, and the annealing temperature (TAnn) was varied from 150 to 350 °C. At TAnn = 200 °C, the electron mobility of the BA-capped In2O3 NC thin film was greater than that of 4ABA-capped In2O3 NCs, while the opposite trend was observed at TAnn = 250 °C. This difference can be attributed, at the lower annealing temperature, to the π-π interaction in the BA-capped In2O3 NC thin film, which is hindered in the ABA-capped In2O3 NC thin film owing to its -NH2 group. At higher annealing temperature, NN bond formation in the ABA-capped In2O3 NC thin film confirmed by Raman spectroscopy plays a key role even after significant thermal decomposition of the ligands in the In2O3 NC thin films. At TAnn = 250 °C, the reorganization energy of BA- or 4ABA-capped In2O3 NCs estimated in the framework of Marcus theory was very similar to each other, indicating that the ligands decompose almost completely, as confirmed by Fourier transform infrared spectroscopy (FT-IR) and thermogravimetric analysis (TGA). The electronic structure was studied by energy-resolved electrochemical impedance spectroscopy (ER-EIS) after annealing the NCs on ITO electrodes at TAnn = 150 °C, 200 °C, or 250 °C. The valence band peak was observed near -6.8 eV for the BA- or 4ABA-capped In2O3 NC films at TAnn =150 °C or 200 °C, but not at TAnn =250 °C. However, for the OA-capped In2O3 NCs, the peak near -6.8 eV was observed for all annealing conditions. Considering the exclusive perseverance of the carboxylate group in the OA-capped In2O3 NCs even at TAnn = 250 °C, as confirmed by FT-IR and TGA, one attributes the peak at -6.8 eV to an electronic state formed by the electronic interaction between the In2O3 NC and the carboxylate groups.

Micropyramidal Flexible Ion Gel Sensor for Multianalyte Discrimination and Strain Compensation.

A highly sensitive and flexible gas sensor that can detect a wide range of chemicals is crucial for wearable applications. However, conventional single resistance-based flexible sensors face challenges in maintaining chemical sensitivity under mechanical stress and can be affected by interfering gases. This study presents a versatile approach for fabricating a micropyramidal flexible ion gel sensor, which accomplishes sub-ppm sensitivity (<80 ppb) at room temperature and discrimination capability between various analytes, including toluene, isobutylene, ammonia, ethanol, and humidity. The discrimination accuracy of our flexible sensor is as high as 95.86%, enhanced by using machine learning-based algorithms. Moreover, its sensing capability remains stable with only a 2.09% change from the flat state to a 6.5 mm bending radius, further amplifying its universal usage for wearable chemical sensing. Therefore, we envision that a micropyramidal flexible ion gel sensor platform assisted by machine learning-based algorithms will provide a new strategy toward next-generation wearable sensing technology.

Spectroscopic analysis of microplastic contaminants in an urban wastewater treatment plant from Seoul, South Korea.

In this study, a systematic multi-spectroscopic analysis of microplastics (MPs) sampled from a metropolitan area of Seoul was undertaken to elevate understanding of the role of wastewater treatment plants (WWTPs) in eliminating suspended contaminants including MPs before releasing the effluent water into the environment. We analyzed pollutants in influent and effluent samples from a WWTP in Seoul, South Korea. Spectroscopic and microscopic methods were used to analyze MPs. Fourier-transform infrared (FT-IR) spectroscopy in the wavenumber region between 4000 and 715 cm-1 was employed to estimate the abundance of MPs in wastewater. Stereomicroscope images and Nile red staining were used to facilely identify MPs in both influents and effluents to compare the results with those of FT-IR data. Hyperspectral imaging could identify MPs in the influent sample with the reflection method at 400-900 nm. Our preliminary results indicate that the most observed MPs after the wastewater were filtered by a 45 µm stainless steel mesh filter were polyethylene (PE) and polypropylene (PP). The total number of the prevalent MPs in influent samples decreased significantly. Nanostructure particles could be found by field-emission scanning electron microscopy (FE-SEM). Our combined multi-spectroscopic study should be helpful to provide a guideline for the rapid spectroscopic analysis of freshwater in the Han River, Seoul, South Korea.

Nanostructured Raman substrates for the sensitive detection of submicrometer-sized plastic pollutants in water.

We prepared novel Raman substrates for the sensitive detection of submicron-sized plastic spheres in water. Anisotropic nanostar dimer-embedded nanopore substrates were prepared for the efficient identification of submicron-sized plastic spheres by providing internal hot spots of electromagnetic field enhancements at the tips of nanoparticles. Silver-coated gold nanostars (AuNSs@Ag) were inserted into anodized aluminum oxide (AAO) nanopores for enhanced microplastic (MP) detection. We found that surface-enhanced Raman scattering (SERS) substrates of AuNSs@Ag@AAO yielded stronger signals at the same weight percentages for polystyrene MP particles with diameters as small as 0.4 µm, whereas such behaviors could not be observed for larger MPs (diameters of 0.8 µm, 2.3 µm, and 4.8 µm). The detection limit of the submicrometer-sized 0.4 µm in our Raman measurements were estimated to be 0.005% (∼0.05 mg/g =50 ppm) along with a fast detection time of only a few min without any sample pretreatments. Our nano-sized dimensional matching substrates may provide a useful tool for the application of SERS substrates for submicrometer MP pollutants in water.

TDM-PON compatible generation of 10 Gbps NRZ and 1.25 Gbps UWB signals by a single light source.

A novel and cost-efficient technique is presented to generate non-return-to-zero (NRZ) and ultra-wideband (UWB) signals in different time slots of time division multiplexing-passive optical network (TDM-PON) by using a single chirped controlled semiconductor laser associated with an optical bandpass filter. In this technique, the chirp of the laser is controlled by different bias burst amplitudes (BBA) for different time slots. Through the proper selection of the burst amplitudes, 10 Gbps NRZ and 1.25 Gbps UWB signals are generated in different time slots. Principle of operation is discussed, the complete chirp behavior of the laser is experimentally investigated, data transmission of the generated signals is demonstrated and bit-error-rate (BER) level of 10-9 is achieved.

Direct DPSK modulation of chirp-managed laser as cost-effective downstream transmitter for symmetrical 10-Gbit/s WDM PONs.

This paper proposes the use of chirp-managed lasers (CML) as cost-effective downstream (DS) transmitters for next generation access networks. As the laser bandwidth is as high as 10 GHz, the CML could be directly modulated at 10 Gbit/s for downstream transmission in future wavelength division multiplexing passive optical networks (WDM PON). The laser adiabatic chirp, which is the main drawback limiting the transmission performance of directly modulated lasers, is now utilized to generate phase-shift keying (PSK) modulation format by direct modulation. At the user premise, the wavelength reuse technique based on reflective colorless upstream transmitter is applied. The optical network unit (ONU) reflects and orthogonally remodulates the received light with upstream data. A full-duplex transmission with symmetrical 10-Gbit/s bandwidth is demonstrated. Bit-error-rate measurement showed that optical power budgets of 29 dB at BER of 10(-9) or of 36 dB at BER of 10(-3) could be obtained with direct phase-shift-keying modulation of CML which proves that the proposed solution is a viable candidate for future WDM-PONs.

Saturated Collision Amplifier reach extender for XGPON1 and TDM/DWDM PON.

Saturated Collision Amplifier (SCA) is a novel amplification scheme that uses SOA saturation in order to maximize the output power and minimize the ASE noise and the polarization sensitivity. We demonstrate the SCA reach extension in a commercial single-wavelength XGPON1 prototype system where bidirectional optical budget of up to 50 dB is obtained. The traffic performances are compared between the SCA and the conventional SOA extender. The novel extension scheme is demonstrated also for two- and four-wavelength 10 Gbit/s unidirectional downstream configurations with 45 km and 100 km transmission distances with 58-dB maximum total optical budget for each wavelength.

Self-phase-modulation-based 2R regenerator including pulse compression and offset filtering for 42.6 Gbit/s RZ-33% transmission systems.

We report on the experimental and theoretical study of a self-phase-modulation-based regenerator at 42.6 Gbit/s with a return-to-zero 33% format. We point out some detrimental effects such as intrachannel interactions and Brillouin scattering. An efficient solution, relying on a self-phase-modulation-based pulse compressor in combination with the regenerator, is proposed to overcome these detrimental phenomena. The experimental demonstration shows the effectiveness of a wavelength-transparent regenerator at 42.6 Gbit/s with a sensitivity-improvement of more than 5 dB and an eye-opening improvement of 2.3 dB in a back-to-back configuration, as well as a 10 times maximum transmission distance improvement for a BER of 10(-4).