Electrically pumped shot-noise limited class A VECSEL at telecom wavelength.

Class A shot-noise limited operation is achieved in an electrically pumped vertical external cavity surface emitting laser (VECSEL), opening the way for integration of such peculiar noiseless laser oscillation in applications where low power consumption and footprint are mandatory. The quantum well active medium is grown on an InP substrate to enable laser oscillation at telecom wavelengths. Single frequency class A operation is obtained by proper optimization of the cavity dimensions, ensuring at the same time a sufficiently long and high-finesse cavity without any intracavity filtering components. The laser design constraints due to electrical pumping are discussed as compared to optical pumping. The intensity noise spectrum of this laser is shown to be shot-noise limited, leading to a relative intensity noise of $-160\;{\rm dB/Hz}$ for 3.1 mA detected photocurrent.

Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III-V photonics platform on silicon using a laboratory X-ray diffraction setup.

This study is carried out in the context of III-V semiconductor monolithic integration on silicon for optoelectronic device applications. X-ray diffraction is combined with atomic force microscopy and scanning transmission electron microscopy for structural characterization of GaP nanolayers grown on Si. GaP has been chosen as the interfacial layer, owing to its low lattice mismatch with Si. But, microtwins and antiphase boundaries are still difficult to avoid in this system. Absolute quantification of the microtwin volume fraction is used for optimization of the growth procedure in order to eliminate these defects. Lateral correlation lengths associated with mean antiphase boundary distances are then evaluated. Finally, optimized growth conditions lead to the annihilation of antiphase domains within the first 10 nm.

Theoretical and experimental studies of (In,Ga)As/GaP quantum dots.

(In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k·p and tight-binding models. These calculations predict an indirect to direct crossover with the In content and the size of the QDs. The optical properties are then studied in a low-In-content range through photoluminescence and time-resolved photoluminescence experiments. It suggests the proximity of two optical transitions of indirect and direct types.