RESUMO
Modulation-doped CdTe quantum wells (QWs) with Cd0.7Mg0.3Te barriers were studied by photoluminescence (PL) and far-infrared Fourier spectroscopy under a magnetic field at 4.2 K and by Raman spectroscopy at room temperature. Two samples were tested: a sample which contained ten QWs (MQW) and a sample with one QW (SQW). The width of each QW was equal to 20 nm, and each of them was modulation-doped with iodine donors introduced in a 4 nm thick layer. The concentration of donors in each doped layer was nominally identical, but the thickness of the spacer in SQW and MQW samples was 20 and 10 nm, respectively. This resulted in a two times higher electron concentration per well in the MQW sample than in the SQW sample. We observed differences in PL from the two samples: the energy range of PL was different, and one observed phonon replicas in MQW which were absent in the SQW sample. An analysis of oscillations of the PL intensity as a function of magnetic field indicated that PL resulted from the recombination of free electrons in the conduction band with free or localized holes in the case of SQW and MQW samples, respectively.
RESUMO
Optical response of crystalline solids is to a large extent driven by excitations that promote electrons among individual bands. This allows one to apply optical and magneto-optical methods to determine experimentally the energy band gap -a fundamental property crucial to our understanding of any solid-with a great precision. Here it is shown that such conventional methods, applied with great success to many materials in the past, do not work in topological Dirac semimetals with a dispersive nodal line. There, the optically deduced band gap depends on how the magnetic field is oriented with respect to the crystal axes. Such highly unusual behavior is explained in terms of band-gap renormalization driven by Lorentz boosts which results from the Lorentz-covariant form of the Dirac Hamiltonian relevant for the nodal line at low energies.
