RESUMO
ZnO/Fe2O3 nanocomposites with different concentration and thickness of the Fe2O3 layer were obtained by two-stage aerosol vapor deposition (AACVD). It was shown that the ZnO particles have a wurtzite structure with an average size of 51-66 nm, and the iron oxide particles on the ZnO surface have a hematite structure and an average size of 23-28 nm. According to EDX data, the iron content in the films was found to be 1.3-5.8 at.%. The optical properties of the obtained films were studied, and the optical band gap was found to be 3.16-3.26 eV. Gas-sensitive properties at 150-300 °C were studied using a wide group of analyte gases: CO, NH3, H2, CH4, C6H6, ethanol, acetone, and NO2. A high response to 100 ppm acetone and ethanol at 225-300 °C and a high and selective response to 300-2000 ppb NO2 at 175 °C were established. The effect of humidity on the magnitude and shape of the signal obtained upon NO2 detection was studied.
Assuntos
Nanocompostos , Óxido de Zinco , Óxido de Zinco/química , Dióxido de Nitrogênio , Acetona , Gases , Biomarcadores , PulmãoRESUMO
While the conductance of a first-order memristor is defined entirely by the external stimuli, in the second-order memristor it is governed by the both the external stimuli and its instant internal state. As a result, the dynamics of such devices allows to naturally emulate the temporal behavior of biological synapses, which encodes the spike timing information in synaptic weights. Here, we demonstrate a new type of second-order memristor functionality in the ferroelectric HfO2-based tunnel junction on silicon. The continuous change of conductance in the p+-Si/Hf0.5Zr0.5O2/TiN tunnel junction is achieved via the gradual switching of polarization in ferroelectric domains of polycrystalline Hf0.5Zr0.5O2 layer, whereas the combined dynamics of the built-in electric field and charge trapping/detrapping at the defect states at the bottom Si interface defines the temporal behavior of the memristor device, similar to synapses in biological systems. The implemented ferroelectric second-order memristor exhibits various synaptic functionalities, such as paired-pulse potentiation/depression and spike-rate-dependent plasticity, and can serve as a building block for the development of neuromorphic computing architectures.
RESUMO
Because of their compatibility with modern Si-based technology, HfO2-based ferroelectric films have recently attracted attention as strong candidates for applications in memory devices, in particular, ferroelectric field-effect transistors or ferroelectric tunnel junctions. A key property defining the functionality of these devices is the polarization dependent change of the electronic band alignment at the metal/ferroelectric interface. Here, we report on the effect of polarization reversal in functional ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors on the potential distribution across the stack and the electronic band line-up at the interfaces studied in operando by hard X-ray photoemission spectroscopy. By tracking changes in the position of Hf0.5Zr0.5O2 core-level lines with respect to those of the TiN electrode in both short- and open-circuit configurations following in situ polarization reversal, we derive the conduction band offset to be 0.7 (1.0) eV at the top and 1.7 (1.0) eV at the bottom interfaces for polarization, pointing up (down), respectively. Energy dispersive X-ray spectroscopy profiling of the sample cross-section in combination with the laboratory X-ray photoelectron spectroscopy reveal the presence of a TiOx/TiON layer at both interfaces. The observed asymmetry in the band line-up changes in the TiN/Hf0.5Zr0.5O2/TiN memory stack is explained by different origin of these oxidized layers and effective pinning of polarization at the top interface. The described methodology and first experimental results are useful for the optimization of HfO2-based ferroelectric memory devices under development.
