Demonstration of a low power and high-speed graphene/silicon heterojunction near-infrared photodetector.

The structure and process of the graphene/Si heterojunction near-infrared photodetector were optimized to enhance the operating speed limit. The introduction of a well-designed structure improved the rise time from 12.6 µs to 115 ns, albeit at the expense of the responsivity, which decreased from 1.25 A W-1 to 0.56 A W-1. Similarly, the falling time was improved from 38 µs to 288 ns with a sacrifice in responsivity from 1.25 A W-1 to 0.29 A W-1, achieved through the introduction of Ge-induced defect-recombination centers within the well. Through a judicious well design and the introduction of recombination defect centers, the minimum pulse width could be improved from 50.6 µs to 435 ns, facilitating 2 MHz operation. This represents more than 100 times increase compared to previously reported graphene and graphene/Si hybrid photodetectors.

Microwave-assisted rapid synthesis of nitrogen-enriched amphibious carbon quantum dots for sensitive detection of ROS and multiple other applications.

Carbon quantum dots (CQDs) have gained tremendous attention due to their pertinence in diverse application fields. Herein, we report the application of nitrogen-doped CQDs (N-CQDs) for the sensitive detection of reactive oxygen species (ROS) in vitro. The N-CQDs were synthesized via a rapid, one-pot, cost-effective and environmentally friendly approach, and exhibited amphibious solubility in solvents with a wide range of relative polarities from 1 to 0.4. Spectroscopic and microscopic techniques were used to accomplish the functional, morphological, and optical characterization of these nanoparticles. The as-synthesized luminous N-CQDs reproducibly demonstrated an average size distribution with a diameter of 5-6 nm. Their suitability for multiple other applications, such as metal sensing, confidential information inscription, hosting on cellulose materials with long-standing stability, designing polysaccharide molds flashing bright fluorescence, fingerprint imprinting, and in vitro bioimaging has also been exhibited. The plausible mechanism of peroxide induced fluorescence quenching of CQDs is presented. Treatment of human neuroblastoma cells SH-SY5Y with 1000 µg mL-1 N-CQDs demonstrated excellent (∼100%) cell viability. An empirical relation between fluorescent intensity of N-CQDs as a function of the concentration of oxidants inside single-cells has been established for the first time.

Reconfigurable Single-Layer Graphene Radio Frequency Antenna Device Capable of Changing Resonant Frequency.

A reconfigurable passive device that can manipulate its resonant frequency by controlling its quantum capacitance value without requiring complicated equipment has been experimentally investigated by modifying the Fermi level of large-area graphene using an external electric field. When the total capacitance change, caused by the gate bias in the passive graphene device, was increased to 60% compared to the initial state, a 6% shift in the resonant frequency could be achieved. While the signal characteristics of the graphene antenna are somewhat inferior compared to the conventional metal antenna, simplifying the device structure allowed reconfigurable characteristics to be implemented by using only the gate bias change.

Demonstration of p-type stack-channel ternary logic device using scalable DNTT patterning process.

A p-type ternary logic device with a stack-channel structure is demonstrated using an organic p-type semiconductor, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). A photolithography-based patterning process is developed to fabricate scaled electronic devices with complex organic semiconductor channel structures. Two layers of thin DNTT with a separation layer are fabricated via the low-temperature deposition process, and for the first time, p-type ternary logic switching characteristics exhibiting zero differential conductance in the intermediate current state are demonstrated. The stability of the DNTT stack-channel ternary logic switch device is confirmed by implementing a resistive-load ternary logic inverter circuit.

Dual-channel P-type ternary DNTT-graphene barristor.

P-type ternary switch devices are crucial elements for the practical implementation of complementary ternary circuits. This report demonstrates a p-type ternary device showing three distinct electrical output states with controllable threshold voltage values using a dual-channel dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]-thiophene-graphene barristor structure. To obtain transfer characteristics with distinctively separated ternary states, novel structures called contact-resistive and contact-doping layers were developed. The feasibility of a complementary standard ternary inverter design around 1 V was demonstrated using the experimentally calibrated ternary device model.

Demonstration of Anti-ambipolar Switch and Its Applications for Extremely Low Power Ternary Logic Circuits.

Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a very high peak-to-valley ratio (∼106) and adjustable operating range characteristics was successfully demonstrated using a ZnO and dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene heterojunction structure. The entire device integration was completed at a low thermal budget of less than 200 °C, which makes this AAS device compatible with monolithic 3D integration. A 1-trit ternary full adder designed with this AAS device exhibits excellent power-delay product performance (∼122 aJ) with extremely low power (∼0.15 µW, 7 times lower than the reference circuit) and lower device count than those of other ternary device candidates.

Perovskite multifunctional logic gates via bipolar photoresponse of single photodetector.

The explosive demand for a wide range of data processing has sparked interest towards a new logic gate platform as the existing electronic logic gates face limitations in accurate and fast computing. Accordingly, optoelectronic logic gates (OELGs) using photodiodes are of significant interest due to their broad bandwidth and fast data transmission, but complex configuration, power consumption, and low reliability issues are still inherent in these systems. Herein, we present a novel all-in-one OELG based on the bipolar spectral photoresponse characteristics of a self-powered perovskite photodetector (SPPD) having a back-to-back p+-i-n-p-p+ diode structure. Five representative logic gates ("AND", "OR", "NAND", "NOR", and "NOT") are demonstrated with only a single SPPD via the photocurrent polarity control. For practical applications, we propose a universal OELG platform of integrated 8 × 8 SPPD pixels, demonstrating the 100% accuracy in five logic gate operations irrelevant to current variation between pixels.

Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction.

The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O2, exhibited p-type doping behavior, whereas those exposed in vacuum and pure N2 gas showed n-type doping. The degree of doping increased with DUV exposure time. However, n-type doping by DUV in vacuum reached saturation after 60 min of DUV irradiation. The p-type doping by DUV in air was observed to be quite stable over a long period in a laboratory environment and at higher temperatures, with little change in charge carrier mobility. The p-doping in pure O2 showed ~15% de-doping over 4 months. The n-type doping in pure N2 exhibited a high doping effect but was highly unstable over time in a laboratory environment, with very marked de-doping towards a pristine condition. A lateral pn-junction of graphene was successfully implemented by controlling the radiation environment of the DUV. First, graphene was doped to n-type by DUV in vacuum. Then the n-type graphene was converted to p-type by exposure again to DUV in air. The n-type region of the pn-junction was protected from DUV by a thick double-coated PMMA layer. The photocurrent response as a function of Vg was investigated to study possible applications in optoelectronics.

Efficiency of minimal oblique resection of the uncinate process during an anterior cervical discectomy and fusion.

ABSTRACT: Hypertrophy of the uncinate process (UP) can cause radiculopathy. Minimal UP resection is considered to remove the lesion while minimizing the risk of complications. This study aimed to elucidate the surgical results of minimal oblique resection of the UP. This study is a retrospective review of about sixty segments in 34 patients who underwent anterior cervical discectomy and fusion (ACDF) with minimal oblique uncinectomy between 2016 and 2018. The cross-sectional area of the UP was measured pre- and postoperatively. The interspinous distance, segmental Cobb angle, subsidence, fusion rate, surgical time, estimated blood loss, and postoperative complications were evaluated. The mean resected areas of the UP were 17.4 ±â€Š8.7 mm2 (25.9%) on the right and 17.3 ±â€Š11.2 mm2 (26.2%) on the left. The difference in interspinous distance in flexion-extension was 7.1 ±â€Š3.2 and 1.6 ±â€Š0.6 mm pre- and postoperatively, respectively (P = .000). The fusion rate after ACDF was 91.7% when measured according to segment (55/60) and 91.2% when measured according to patients (31/34). The difference in the segmental Cobb angle in flexion-extension was 8.3 ±â€Š6.2° and 1.9 ±â€Š0.3° pre and postoperatively, respectively (P = .000). Subsidence occurred in 4 (11.8%) patients and 5 (8.3%) segments. The average surgical time per segment was 68.8 ±â€Š9.3 minute, and the estimated blood loss was 48.5 ±â€Š25.0 mL. Postoperative complications comprised 1 case each of neck swelling, wound infection, pneumonia, and gastrointestinal bleeding. Our findings therefore revealed that minimal oblique uncinectomy during an ACDF can maintain the stability of the uncovertebral joint while sufficiently decompressing the neural foramen.

High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi2Te3 Nanowires.

A graphene photodetector decorated with Bi2Te3 nanowires (NWs) with a high gain of up to 3 × 104 and wide bandwidth window (400-2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/Bi2Te3 nanoplate junction. Additionally, the position of photocurrent generation was investigated at the graphene/Bi2Te3 NWs junction. Eventually, with low bandgap Bi2Te3 NWs and a graphene junction, the photoresponsivity improved by 200% at 2200 nm (~0.09 mA/W).

Bias-controlled multi-functional transport properties of InSe/BP van der Waals heterostructures.

Van der Waals (vdW) heterostructures, consisting of a variety of low-dimensional materials, have great potential use in the design of a wide range of functional devices thanks to their atomically thin body and strong electrostatic tunability. Here, we demonstrate multi-functional indium selenide (InSe)/black phosphorous (BP) heterostructures encapsulated by hexagonal boron nitride. At a positive drain bias (VD), applied on the BP while the InSe is grounded, our heterostructures show an intermediate gate voltage (VBG) regime where the current hardly changes, working as a ternary transistor. By contrast, at a negative VD, the device shows strong negative differential transconductance characteristics; the peak current increases up to ~5 µA and the peak-to-valley current ratio reaches 1600 at VD = -2 V. Four-terminal measurements were performed on each layer, allowing us to separate the contributions of contact resistances and channel resistance. Moreover, multiple devices with different device structures and contacts were investigated, providing insight into the operation principle and performance optimization. We systematically investigated the influence of contact resistances, heterojunction resistance, channel resistance, and the thickness of BP on the detailed operational characteristics at different VD and VBG regimes.

Modulation of the Electronic Properties of MXene (Ti3C2Tx) via Surface-Covalent Functionalization with Diazonium.

The physical and chemical properties of MXenes are strongly dependent on surface terminations; thus, the tailoring of surface functional groups in two-dimensional transition-metal carbides (MXenes) may extend the applicability of these compelling materials to a wider set of fields. In this work, we demonstrate the chemical modification of Ti3C2Tx MXene via diazonium covalent chemistry and the subsequent effects on the electrical properties of MXene. The 4-nitrophenyl group was grafted onto the surface of MXene through a solid-liquid reaction, which was confirmed by various characterization methods, including X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, electron energy loss spectroscopy, atomic force microscopy, and transmission electron microscopy. The degree of modification of MXene is expediently tunable by adjusting the concentration of the diazonium salt solution. The work function of functionalized MXene is modifiable by regulating the quantity of grafted diazonium surface groups, with an adjustable range of around 0.6 eV. Further, in this study, the electrical properties of modified MXene are investigated through the fabrication of field-effect-transistor devices that utilize modified MXene as a channel material. It was demonstrated that with increasing concentration of 4-nitrophenyl groups grafted onto the surface the on/off current ratio of the modified MXene was improved to as much as 3.56, with a corresponding decrease in conductivity and mobility. The proposed approach of controlled modification of surface groups in Ti3C2Tx may imbue Ti3C2Tx with favorable electronic behaviors and demonstrate prospects for use in electronic field applications.

Free-Hand Cervical Pedicle Screw Placement by Using Para-articular Minilaminotomy: Its Feasibility and Novice Neurosurgeons' Experience.

STUDY DESIGN.: Retrospective study. OBJECTIVE.: Cervical pedicle screw (CPS) placement is technically demanding because of the great variation in pedicle size, dimension, and angulations between cervical levels and patients and the lack of anatomical landmarks. This retrospective study was conducted to analyze novice neurosurgeons' experience of CPS placement by using the technique with direct exposure of pedicle via para-articular minilaminotomy. METHODS.: We retrospectively reviewed 78 CPSs in 22 consecutive patients performed by 2 surgeons. All pedicle screws were inserted under the direct visualization of the pedicle by using para-articular minilaminotomy without any fluoroscopic guidance. We analyzed the direction and grade of pedicle perforation on the postoperative computed tomography scan. The degree of perforation was classified as grade 0 to 3. Grades 0 and 1 were classified as the correct position and the others, as the incorrect position. RESULTS.: In total, the correct position (grade 0 and 1) was found in 72 (92.3%) screws and the incorrect position (grade 2 and 3) in 6 (7.7%). Among the 16 pedicle perforations (grade 1, 2, and 3 perforations), the directions were lateral in 15 (93.8%) and superior in 1 (6.2%). There were no neurovascular complications related to CPS insertion. CONCLUSION.: Free-hand CPS placement by using para-articular minilaminotomy seems to be feasible and reproducible.

Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors.

An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF4 plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresis during the DC current-voltage measurement, and the polarity and magnitude of hysteresis depend on the drain voltage. The hysteresis phenomenon is due to the electron trapping at the Al2O3/AlGaN interface and charging times longer than milliseconds were obtained by pulse I-V measurement. In addition, the subthreshold slope of the fluorinated-gate device was increased after the positive gate bias stress because of the two-dimensional electron gas reduction by ionized fluorine. Our systematic observation revealed that the effect of fluorine ions should be considered for the design of AlGaN/GaN power circuits.

Performance Degradation in Graphene-ZnO Barristors Due to Graphene Edge Contact.

The physical and chemical characteristics of the edge states of graphene have been studied extensively as they affect the electrical properties of graphene significantly. Likewise, the edge states of graphene in contact with semiconductors or transition-metal dichalcogenides (TMDs) are expected to have a strong influence on the electrical properties of the resulting Schottky junction devices. We found that the edge states of graphene form chemical bonds with the ZnO layer, which limits the modulation of the Fermi level at the graphene-semiconductor junction, in a manner similar to Fermi level pinning in silicon devices. Therefore, we propose that graphene-based Schottky contact should be accomplished with minimal edge contact to reduce the limits imposed on the Fermi level modulation; this hypothesis has been experimentally verified, and its microscopic mechanism is further theoretically examined.

Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors.

The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain current (ID) via trap-assisted tunneling when the gate voltage (VG) is lower than the specific voltage associated with the trap level. The oxygen vacancies were successfully passivated after the annealing of ZnO in oxygen ambient. We determined that the trap-induced Schottky barrier lowering reduced a drain barrier when the drain was subjected to negative bias stress. Consequentially, the field effect mobility increased from 8.5 m2 V-1·s-1 to 8.9 m2 V-1·s-1 and on-current increased by ~13%.

Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on/off ratio field-effect switching applications.

A two-dimensional (2D) WOx/ZnO stack reveals a unique carrier transport behavior, which can be utilized as a novel device element to achieve a very high on/off ratio (>106) and an off current density lower than 1 nA cm-2. These unique behaviors are explained by a dynamic band alignment between WOx and ZnO, which can be actively modulated by a gate bias. The performance of FET utilizing the WOx/ZnO stack is comparable to those of other 2D heterojunction devices; however, it has a unique benefit in terms of process integration because of very low temperature process capability (T < 110 °C). The high on/off switching with extremely low off current density utilizing the dynamic band alignment modulation at the WOx/ZnO stack can be a very useful element for future device applications, especially in monolithic 3D integration or flexible electronics.

Gate-Modulated Ultrasensitive Visible and Near-Infrared Photodetection of Oxygen Plasma-Treated WSe2 Lateral pn-Homojunctions.

We investigate the development of gate-modulated tungsten diselenide (WSe2)-based lateral pn-homojunctions for visible and near-infrared photodetector applications via an effective oxygen (O2) plasma treatment. O2 plasma acts to induce the p-type WSe2 for the otherwise n-type WSe2 by forming a tungsten oxide (WOx) layer upon O2 plasma treatment. The WSe2 lateral pn-homojunctions displayed an enhanced photoresponse and resulted in open-circuit voltage (VOC) and short-circuit current (ISC) originating from the pn-junction formed after O2 plasma treatment. We further notice that the amplitude of the photocurrent can be modulated by different gate biases. The fabricated WSe2 pn-homojunctions exhibit greater photoresponse with photoresponsivities (ratio of the photocurrent and incident laser power) of 250 and 2000 mA/W, high external quantum efficiency values (%, total number of charge carriers generated for the number of incident photons on photodetectors) of 97 and 420%, and superior detectivity values (magnitude of detector sensitivity) of 7.7 × 109 and 7.2 × 1010 Jones upon illumination with visible (520 nm) and near-infrared lasers (852 nm), respectively, at low bias (Vg = 0 V and Vd = 1 V) at room temperature, demonstrating very high-performance in the IR region superior to the contending two-dimensional material-based photonic devices. These superior optoelectronic properties are attributed to the junctions induced by O2 plasma doping, which facilitate the effective carrier generation and separation of photocarriers with applied external drain bias upon strong light absorption.

Tunable in-plane thermal conductivity of a single PEDOT:PSS nanotube.

Understanding the mechanism of thermal energy transport in a single nanotube (NT) is essential for successfully engineering nanostructured conducting polymers to apply to thermoelectrics or flexible electronic devices. We report the characterization of the in-plane thermal energy transport in a single poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) NT via direct measurement of the in-plane thermal conductivity (κ). We also demonstrate that the in-plane κ of PEDOT:PSS NT can be tuned within the range of 0.19 to 1.92 W·m-1·K-1 merely by changing the solvent used to treat the NTs in the post-fabrication stage. The in-plane thermal energy transport in a pristine NT, with its low in-plane κ, is primarily due to phonons; in a sulfuric acid-treated NT however, significant electronic contributions lead to a high in-plane κ. The present study will contribute to understanding the mechanism of thermal energy transport in highly disordered structures, such as conducting polymers, and to designing highly efficient polymer-based devices in which in-plane κ plays a pivotal role in determining the energy conversion efficiency.

A negative electrocaloric effect in an antiferroelectric zirconium dioxide thin film.

A large negative electrocaloric effect is demonstrated in an antiferroelectric ZrO2 thin film with 8 nm thickness deposited by atomic layer deposition. An adiabatic temperature change as high as ΔT = -31 K is obtained for an electric field change of ΔE = 3.45 MV cm-1 at an ambient temperature of 413 K. Moreover, the ZrO2 thin film shows enhanced stability as demonstrated by endurance and Preisach density maps. Due to its high phase transition temperature, high thermal stability, high scalability and full CMOS compatibility, ZrO2 is proposed as a promising candidate for future multilayer electrocaloric and solid-state cooling devices.