Highly Efficient Solution-Processed Organic Light-Emitting Diodes Containing a New Cross-linkable Hole Transport Material Blended with Commercial Hole Transport Materials.

A new small-molecular thermally cross-linkable material {[4-(9-phenyl-9H-carbazol-4-yl)phenyl]-bis-(4'-vinylbiphenyl-4-yl)-amine} (PCP-bis-VBPA, PbV) containing the styrene moiety was synthesized for hole transport layers in wet processed organic light-emitting diodes (OLEDs). It was found that PbV exhibited relatively high glass temperatures above 154 °C and a triplet energy (T1) greater than 2.81 eV. This new synthetic hole transport material (HTM) forms very uniform films after cross-linking reaction with little pin-holes, although it was small-molecule-based cross-linkable HTM. However, to solve the certain minor non-uniformity caused by pinholes with various sizes, a semi-interpenetrating network was formed with well-known polymeric HTM with high mobility [e.g., poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenyl amine), TFB, or poly(N,N'-bis-4-butylphenyl-N,N'-bisphenyl)benzidine, poly-TPD]. As a result, we successfully fabricated red phosphorescent OLED showing an efficiency of about 16.7 cd/A and 12.4% (external quantum efficiency) if we applied PbV blended with 20% of TFB or poly-TPD. In particular, the efficiency and lifetime are significantly improved by 1.5 and 4.5 times, respectively, compared to those of the control device without using blended HTM.

Correction: An indenocarbazole-based host material for solution processable green phosphorescent organic light emitting diodes.

[This corrects the article DOI: 10.1039/D1RA04855D.].

An indenocarbazole-based host material for solution processable green phosphorescent organic light emitting diodes.

We designed and synthesized a new host material with a highly soluble and thermally stable indenocarbazole derivative (7,7-dimethyl-5-phenyl-2-(9-phenyl-9H-carbazol-3-yl)-5,7-dihydro-indeno[2,1-b]carbazole) that can make green phosphorescent organic light-emitting diodes (PHOLEDs) in a solution process. In particular, these are used in a blue common layer structure in which green and red-emitting layers are formed by a solution process and blue common layers are thermally evaporated. The new host material possesses excellent hole transport capability and high triplet energy (T1). Mainly we designed the hole dominant material to keep the exciton forming area away from the hole transport layer (HTL) and emitting layer (EML) interface, an interfacial mixing area to improve device performance. As a result, the greatest lifetime of 1300 hours was achieved and a high current efficiency of up to 66.3 cd A-1 was recorded when we used the optimized device structure of a 5 nm thick bipolar exciton blocking layer (B-EBL). It may be a good agreement of exciton confinement and reduced electron accumulation at the HTL and EML interface.